2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

FEATURES

Subscriber Identification Module (SIM) card interface in
accordance with GSM11.11, GSM11.12 (Global System
for Mobile communication) and ISO 7816 requirements

regulation (3 or 5 V

8%) with controlled rise and

fall times

Card take-off protection

One protected and buffered pseudo-bidirectional I/O line
(I/O referenced to V

and SIMI/O referenced to V

DDI

)

Clock generation (up to 10 MHz) with synchronous start
and frequency doubling

Clock stop LOW, clock stop HIGH or 1.25 MHz (from
internal oscillator) for cards Power-down mode

Automatic activation and deactivation sequences of an
independent sequencer

Automatic processing of pin RST with count of the CLK
cycles for start of the Answer To Reset (ATR)

Warm reset command

Supply voltage supervisor for Power-on reset, spike
killing and emergency deactivation in case of supply
drop-out

DC-to-DC converter (doubler, tripler or follower)
allowing operation in a 3 or 5 V environment
(2.5

6 V)

Enhanced Electrostatic Discharge (ESD) protections on
card side (6 kV minimum)

Power-down mode with several active features and
current reduction

Off mode with 2

A current

Control from a microcontroller via a 400 kHz slave
I

C-bus (4 possible addresses: 48H, 4AH, 4CH

and 4EH)

Four parallel devices possible due to 2 sub-address
wires

Interface signals supplied by an independent voltage
(1.5

DDI

6 V).

APPLICATIONS

GSM mobile phones

SAM interfaces in banking terminals

Portable card readers, etc.

GENERAL DESCRIPTION

The TDA8003TS is a low cost one chip SIM interface, in
accordance with GSM11.11, GSM11.12 and EMV96
(Europay, Mastercard, Visa) with card current limitation.
Controlled by I

C-bus, it is optimized in terms of board

space, external components count and connection count
(see Chapter "Application information").

The integrated DC-to-DC converter ensures full
cross-compatibility between 3 or 5 V cards and 3 or 5 V
environments. The very low-power consumption in
Power-down mode and Off mode saves battery power.

ORDERING INFORMATION

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

TDA8003TS/C1

SSOP24

plastic shrink small outline package; 24 leads; body width 5.3 mm

SOT340-1

TDA8003TS/C2

SSOP24

plastic shrink small outline package; 24 leads; body width 5.3 mm

SOT340-1

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

supply voltage on pins V

DDS

and V

DDP

2.5

supply current on pins V

DDS

and V

DDP

Off mode; V

= 3 V

Power-down mode; V

= 3 V;

= 5 V; I

= 100

A; SIMCLK

connected to PGND or V

DDI

;

CLK is stopped

500

active mode; V

= 3 V; V

= 3 V;

= 6 mA; f

CLK

= 3.25 MHz

active mode; V

= 3 V; V

= 5 V;

= 10 mA; f

CLK

= 3.25 MHz

active mode; V

= 5 V; V

= 3 V;

= 6 mA; f

CLK

= 3.25 MHz

active mode; V

= 5 V; V

= 5 V;

= 10 mA; f

CLK

= 3.25 MHz

DDI

interface signal supply voltage

1.5

card supply voltage

5 V card; active mode;
0 < I

< 15 mA; 40 nAs dynamic

load on 200 nF capacitor

4.6

5.4

3 V card; active mode;
0 < I

< 10 mA; 24 nAs dynamic

load on 200 nF capacitor

2.75

3.25

5 V card; bit PDOWN = 1; I

< 5 mA 4.6

5.4

3 V card; bit PDOWN = 1; I

< 5 mA 2.75

3.25

slew rate on V

(rise and fall)

L(max)

= 200 nF

0.05

0.25

deactivation time

120

act

activation time

150

i(SIMCLK)

clock input frequency

MHz

amb

operating ambient temperature

+85

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

PINNING

Note

1. Card presence input with negative current source. To be used with the card reader switch connected to V

DDS

or V

DDP

. The switch is normally closed when the card is not present. If the switch connection is open-circuit or pin 16

is not connected, then the interface will always detect a present card (see Fig.7).

SYMBOL

PIN

DESCRIPTION

PWROFF

control input for entering the Off mode (active LOW)

capacitor connection for the DC-to-DC converter (between S1 and S2)

PGND

power ground

capacitor connection for the DC-to-DC converter (between S3 and S4)

DDP

power supply voltage

capacitor connection for the DC-to-DC converter (between S3 and S4)

capacitor connection for the DC-to-DC converter (between S1 and S2)

VUP

DC-to-DC converter output (must be decoupled with 100 nF to ground)

I/O

input/output to and from the card reader (C7I); see Fig.7

SGND

signal ground

CLK

clock output to the card reader (C3I)

supply voltage to the card reader (C1I)

RST

reset output to the card reader (C2I)

DDS

signal supply voltage

DEL

external capacitor connection for the delay on voltage supervisor

PRES

card presence indication input (active LOW); note 1

SIMI/O

input/output to and from the microcontroller (internal 20 k

pull-up resistor connected to V

DDI

)

DDI

supply voltage for the interface signals with the system

SDA

C-bus serial data input/output

SCL

C-bus serial clock input

SIMERR

interrupt output (active LOW; internal 100 k

pull-up resistor connected to V

DDI

)

SAD0

C-bus slave address selection input

SAD1

C-bus slave address selection input

SIMCLK

external clock input

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

Fig.2 Pin configuration.

handbook, halfpage

PWROFF

PGND

VDDP

VUP

I/O

SGND

CLK

VCC

SIMCLK

SAD1

SAD0

SIMERR

SDA

VDDI

SCL

SIMI/O

PRES

DEL

VDDS

RST

TDA8003TS

MGR435

FUNCTIONAL DESCRIPTION

Figure 1 shows the block diagram of the TDA8003TS.
The functional blocks are described in the following
sections. It is assumed that the reader of this specification
is aware of GSM11.11 and ISO 7816 terminology.

C-bus control

The I

C-bus interface is used:

To configure the clock to the card in active mode
(

SIMCLK

and

SIMCLK

)

To configure the clock to the card in power reduction
mode (stop LOW, stop HIGH or

1.25 MHz derived

from the internal oscillator)

To select operation with a 3 or 5 V card

To start or stop sessions (cold reset)

To initiate a warm reset

To enter or leave the Power-down mode

To request the status (card present or not, hardware
problem occurred, unresponsive card after activation,
supply drop-out detected by the voltage supervisor, card
powered or not)

To configure SIMI/O and I/O in high-impedance (for use
of several TDA8003TS in parallel).

The structure of the I

C-bus data frames is as follows:

Commands to the TDA8003TS:

START/ADDRESS/WRITE

COMMAND BYTE

STOP.

The fixed address is 01001XY. X and Y are defined by
the logic levels on pins SAD1 and SAD0 as shown in
Table 1 (connect to ground for logic 0; connect to V

DDI

for logic 1). The command bits are described in Table 2.
The commands are executed on the rising edge of the
9th SCL pulse.

Status from the TDA8003TS (see Table 4). The fixed
address is 01001XY. X and Y are defined by the logic
levels on pins SAD1 and SAD0 as shown in Table 1.

Table 1

Address selections

ADDRESS

SAD1

SAD0

48H

4AH

4CH

4EH

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

Table 2

Description of the command bits; (all bits are cleared at reset)

Table 3

Clock to the card at power-down

Table 4

Description of the status bits; note 1

Note

1. In case of card extraction, supply drop-out or overload detection within a session, the card will be automatically

deactivated, SIMERR pulled LOW, bit START = 0 and the corresponding status bit = 1. The status bit will be logic 0
and SIMERR will be released when the microcontroller reads out the status register, on the 7th SCL pulse. After a
supply drop-out, SIMERR will be released at the end of the alarm pulse and bit SUPL = 1.

SYMBOL

BIT

DESCRIPTION

START/STOP

Logic 1 initiates an activation sequence and a cold reset procedure. Logic 0 initiates a
deactivation sequence.

WARM

Logic 1 initiates a warm reset procedure. TDA8003TS/C1: warm reset performed only
when the 2 times 45000 CLK pulses have expired without answer from the card.

TDA8003TS/C2: warm reset performed whatever the card has answered or not at the
cold reset procedure but the count is 2 times 44745 CLK pulses.

3 V/5 VN

Logic 1 sets the card supply voltage V

to 3 V. Logic 0 sets V

to 5 V.

PDOWN

Logic 1 applies on CLK the frequency defined by bits CLKPD1 and CLKPD2, and
enters a reduced consumption mode. Logic 0 sets the circuit back to normal mode.

CLKPD1

Bits 4 and 5 determine the clock to the card at power-down as shown in Table 3.

CLKPD2

DT/DFN

Logic 1 sets f

CLK

SIMCLK

(in active mode). Logic 0 sets f

CLK

SIMCLK

I/OEN

Logic 1 will transfer I/O to SIMI/O. Logic 0 sets I/O and SIMI/O to high-impedance.

BIT 4

BIT 5

FUNCTION

clock stop LOW

clock stop HIGH

clock is

osc

no change

SYMBOL

BIT

DESCRIPTION

PRES

Logic 1 when the card is present. Logic 0 when the card is not present.

PRESL

Logic 1 when the card has been extracted or inserted. Logic 0 when the status is
read-out.

Bit 2 is not used and is fixed to logic 0.

SUPL

Logic 1 when the voltage supervisor has signalled a fault. Logic 0 when the status is
read-out.

PROT

Logic 1 when an overload has occurred during a session. Logic 0 when the status is
read-out.

MUTE

TDA8003TS/C1: Logic 1 when a card has not answered after 2 times 45000 CLK
pulses. Logic 0 when the status is read-out.

TDA8003TS/C2: Same as for C1, but the count is 2 times 44745 CLK pulses.

EARLY

Logic 1 when a card has answered between 200 and 352 CLK cycles. Logic 0 when
the status is read-out.

ACTIVE

Logic 1 when the card is power-on. Logic 0 when the card is power-off.

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

Power supply

The circuit operates within a supply voltage range of
2.5 to 6 V. The supply pins are V

DDS

and SGND. Pins

DDP

and PGND only supply the DC-to-DC converter for

the analog drivers to the card and must be decoupled
externally because of the large current spikes that the card
and the DC-to-DC converter can create. An integrated
spike killer ensures the card contacts to remain inactive
during power-up or power-down. An internal voltage
reference is generated for the DC-to-DC converter, the
voltage supervisor and the V

generator.

All interface signals with the microcontroller (PWROFF,
SIMCLK, SAD1, SAD0, SIMERR, SCL, SDA and SIMI/O)
are referenced to a separate supply pin V

DDI

, which may

be different from V

(1.5

DDI

6 V).

The pull-up resistors on bus lines SDA and SCL may be
referenced to a voltage higher than V

DDI

. This allows the

use of peripherals which do not operate at V

DDI

The voltage supervisor (see Fig.3) senses V

DDS

. It

generates an alarm pulse, whose length t

is defined by

an external capacitor connected to pin DEL, when V

too low to ensure proper operation (1 ms per 1 nF typical).

During this alarm pulse, SIMERR is LOW and the I

C-bus

is unresponsive. SIMERR goes back to HIGH, and the
I

C-bus becomes operational at the end of this alarm

pulse. Bit SUPL is set as long as the status has not been
read.

It is also used to either block any spurious signals on card
contacts during microcontroller reset, or to force an
automatic deactivation of the contacts in the event of
supply drop-out.

Outside a card session, SIMERR is LOW as long as the
voltage supervisor is active. If a supply drop-out occurs
during a session, SIMERR falls to LOW, bit START is
cleared and an automatic deactivation is initiated.

Fig.3 Voltage supervisor.

handbook, full pagewidth

MGR436

VDDS

DEL

C-bus unresponsive

C-bus

unresponsive

C-bus

unresponsive

C-bus OK

status read

after event

C-bus OK

SIMERR

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

DC-to-DC converter

The whole circuit is powered by V

DDS

, except for the

generator, the other card contact buffers and the

interface signals.

The DC-to-DC converter acts as a doubler or a tripler,
depending on the supply voltage V

and the card supply

voltage V

. There are basically four possible situations:

= 3 V and V

= 3 V. The DC-to-DC converter acts

as a doubler with a regulation of V

VUP

at approximately

4.5 V

= 3 V and V

= 5 V. The DC-to-DC converter acts

as a tripler with a regulation of V

VUP

at approximately

6.5 V

= 5 V and V

= 3 V. The DC-to-DC converter is

disabled and V

is applied to pin VUP

= 5 V and V

= 5 V. The DC-to-DC converter acts

as a doubler with a regulation of V

VUP

at approximately

6.5 V.

The supply voltage is recognized by the TDA8003TS at
approximately 3.75 V for the C1 and 3.3 V for the C2.

When a card session is requested by the microcontroller,
the sequencer will first start the DC-to-DC converter, which
is a switched capacitor type, clocked by an internal
oscillator at a frequency f

osc

of approximately 2.5 MHz.

The output voltage V

VUP

is regulated at approximately

4.5 or 6.5 V and subsequently fed to the V

generator.

and PGND are used as a reference for all other card

contacts.

Power-down mode

The Power-down mode is used for current consumption
reduction when the card is in Sleep mode.

To enter Power-down mode, the microcontroller must first
select CLK in this mode (stop LOW, stop HIGH or
1.25 MHz from the internal oscillator) with bits CLKPD1
and CLKPD2. Subsequently, the microcontroller sends the
command PDOWN, CLK is switched to the value
predefined by bits CLKPD1 and CLKPD2, and SIMCLK
may be stopped (HIGH or LOW).

If the selected CLK is stopped, the biasing currents in the
buffers to the card will be reduced. The voltage supervisor
and all control functions also remain active. The maximum
current taken by the card in this mode when CLK is
stopped is assumed to be less than 5 mA.

Before leaving the Power-down mode, the clock signal
must first be applied to SIMCLK, and then bit PDOWN
must be set to logic 0.

Off mode

The Off mode is entered when the PWROFF signal is
LOW. In this mode, no function is valid. This mode avoids
switching off the power supply of the device, and gives a
current consumption less than 2

A. Before entering the

Off mode, the card must be deactivated.

The Off mode is resumed when the PWROFF signal
returns to HIGH. This re-initializes the voltage supervisor,
and has the same effect as a reset of the device. As long
as the device is not ready to operate, the SIMERR signal
will remain LOW.

Sequencer and clock counter

The sequencer handles the ensuring activation and
deactivation sequences in accordance with GSM11.11
and ISO 7816, even in case of emergency (card take-off,
short circuit and supply drop-out). The sequencer is
clocked with the internal oscillator frequency f

osc

The activation is initiated with the START command (only
if the card is present, and if the voltage supervisor does not
detect a fault on the supply). During activation, V

goes

HIGH and subsequently I/O is enabled and CLK is started
with RST = LOW. The clock counter counts the CLK
pulses till a start bit is detected on I/O.

After 45000 CLK pulses for the C1 (44745 for the C2), if no
start bit on I/O has been detected, the sequencer toggles
RST to HIGH, and counts again 45000 CLK pulses
(44745 for the C2). If, again, no start bit has been
detected, SIMERR will be pulled LOW and the information
of bit MUTE is set in the status register.

If a start bit has been detected during the two 45000 CLK
pulse slots (44745 for the C2), the clock counter is
stopped, RST is kept at the same level and the session
can go on between the card and the system.

The clock counter does not take care of any start bit during
the 200 first CLK pulses of both slots; if a start bit is
detected between 200 and 352 CLK pulses of both slots,
then SIMERR will be pulled LOW and the information of
bit EARLY is set in the status register.

The deactivation is initiated either by the microcontroller
(STOP command), or automatically by the TDA8003TS in
case of card take-off, short circuit or supply voltage
drop-out detected by the voltage supervisor. During
deactivation, RST will go LOW, CLK is stopped, I/O is
disabled and V

goes LOW.

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

Clock circuit

The clock to the card is either derived from pin SIMCLK
(2 to 20 MHz) or from the internal oscillator.

During a card session, f

CLK

may be chosen to be

SIMCLK

depending on bit DT/DFN.

For the card Sleep mode, CLK may be chosen stop LOW,
stop HIGH or

osc

(1.25 MHz) with bits CLKPD1 and

CLKPD2. This predefined value will be applied to CLK
when bit PDOWN is set to logic 1.

The first CLK pulse has the correct width, and all frequency
changes are synchronous, ensuring that no pulse is
smaller than 45% of the shortest period.

The duty cycle is within 45 and 55% in stable state, the rise
and fall times are less than 8% of the period and
precaution has been taken so that there is no overshoot or
undershoot.

Activation sequence

Figure 4 shows the activation sequence. When the card is
inactive, V

, CLK, RST and I/O are LOW, with

low-impedance with respect to ground. The DC-to-DC
converter is stopped. SIMI/O is pulled HIGH at V

DDI

via the

20 k

pull-up resistor. When all conditions are met (supply

voltage, card present, no hardware problems), the
microcontroller may initiate an activation sequence by
setting bit START to logic 1 (t

) via the I

C-bus:

1. The DC-to-DC converter is started (t

2. V

starts rising from 0 to 3 or to 5 V according to

3 V/5 VN control bit with a controlled rise time of
0.17 V/

s typically (t

3. I/O buffer is enabled in reception mode (t

4. CLK is sent to the card reader with RST = LOW, and

the count of 45000 (44745 for C2) CLK pulses is
started (t

= t

act

5. If a start bit is detected on I/O, the clock counter is

stopped with RST = LOW. If not, RST = HIGH, and a
new count of 45000 (44745 for C2) CLK pulses is
started (t

If a start bit is detected on I/O and the clock counter is
stopped with RST = HIGH, the card session may continue.
If not, bit MUTE is set in the status register and SIMERR is
pulled LOW. The microcontroller may initiate a
deactivation sequence by setting bit START to logic 0.

If a start bit is detected during the 200 first CLK pulses of
each count slot, then it will not be taken into account. If a
start bit is detected during 200 and 352 CLK pulses of
each slot, then bit EARLY is set in the status register and
SIMERR is pulled LOW. The microcontroller may initiate a
deactivation sequence by setting bit START to logic 0.

The sequencer is clocked by

osc

which leads to a time

interval T of 25

s typically. Thus t

= 0 to

= t

T; t

= t

T; t

= t

+ 4T and t

depends on

the SIMCLK frequency.

Deactivation sequence

Figure 5 shows the deactivation sequence. When the
session is completed, the microcontroller sets bit START
to logic 0. The circuit will execute an automatic
deactivation sequence:

1. Card reset, RST falls to LOW (t

2. CLK is stopped (t

3. I/O falls to LOW (t

4. V

falls to 0 V with typically 0.17 V/

s slew rate (t

The deactivation is completed when V

reaches

0.4 V (t

5. The DC-to-DC converter is stopped and CLK, RST,

and I/O become low-impedance with respect to

PGND (t

Where t

T; t

= t

T; t

= t

+ T;

= t

+ 5

s and t

= t

+ 4T.

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

Protections

The following main hardware fault conditions are
monitored by the circuit:

Short circuits between V

and other contacts

Card take-off during transaction

Supply drop-out.

When one of these problems is detected during a card
session, the security logic block pulls SIMERR to LOW, to
warn the microcontroller and initiates an automatic
deactivation of the contacts (see Fig.6).

I/O circuit

The Idle state is realized by both I/O and SIMI/O being
pulled HIGH (via a 10 k

pull-up resistor from I/O to V

and via a 20 k

pull-up resistor from SIMI/O to V

DDI

I/O is referenced to V

and SIMI/O to V

DDI

, thus allowing

operation with V

DDI

When configuration bit I/OEN is logic 0, then I/O and
SIMI/O are independent, which allows parallelization of
several TDA8003TS with only one I/O line on the
microcontroller side (up to 4 different I

C-bus addresses).

When bit I/OEN is logic 1, then the data transmission
between I/O and SIMI/O is enabled.

The first side on which a falling edge occurs becomes the
master. An anti-latch circuit disables the detection of falling
edges on the other side, which becomes a slave.

After a delay time t

(<500 ns) on the falling edge, the

N transistor on the slave side is turned on, thus
transmitting the logic 0 present on the master side.

When the master goes back to logic 1, the P transistor on
the slave side is turned on during t

, and then both sides

return to their Idle states.

The maximum frequency on these lines is 1 MHz.

Fig.6 Emergency deactivation.

handbook, full pagewidth

MGR439

SIMERR

START

status readout

RST

I/O

VCC

CLK

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handle Metal Oxide Semiconductor (MOS) devices.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

DDP

power supply voltage

0.5

+6.5

DDS

signal supply voltage

0.5

+6.5

DDI

interface signal supply voltage

0.5

+6.5

i(n)

input voltage

on pins 1, 17, 21 and 24

0.5

+6.5

on pins 15, 16, 22 and 23

0.5

DDS

+ 0.5 V

on pins 19 and 20

0.5

+6.5

on pins 9, 11 and 13

0.5

+ 0.5

on pin 12

0.5

+6.5

on pin 8

0.5

+7.5

on pins 2, 4, 6 and 7

0.5

VUP

+ 0.5 V

i(n)

DC input current

on pins 1, 17, 19, 20, 21, 22, 23 and 24

on pin 15

+10

i/o(n)

DC input/output current

on pins 2, 4, 6, 7 and 8

+40

on pin 16

i/o(17)

transient input/output current on pin 17

duration 1 ms

+40

tot

continuous total power dissipation

amb

40 to +85

230

operating junction temperature

125

stg

IC storage temperature

+150

esd(n)

electrostatic discharge voltage

on pins 9, 11, 12, 13 and 16

on any other pin

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

th(j-a)

thermal resistance from junction to ambient in free air

102

K/W

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

CHARACTERISTICS
V

= 3 V; V

DDI

= 1.5 V; f

SIMCLK

= 13 MHz; f

CLK

= 3.25 MHz; T

amb

= 25

C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies

supply voltage on pins V

DDS

and V

DDP

2.5

6.0

supply current on pins V

DDS

and V

DDP

Off mode

inactive mode

Power-down mode; V

= 5 V;

= 100

A; SIMCLK connected

to SGND or V

DDI

; CLK is stopped

500

active mode; V

= 3 V; I

= 6 mA

active mode; V

= 5 V;

= 10 mA

active mode; V

= 5 V; V

= 3 V;

= 6 mA

active mode; V

= 5 V; V

= 5 V;

= 10 mA

DDI

interface signal supply voltage

1.5

DDI

interface signals supply
current

SIMCLK connected to
PGND or V

DDI

SIMCLK

= 13 MHz; V

DDI

= 1.5 V

120

th(VDD)

threshold voltage on V

falling edge

2.3

hys

hysteresis voltage on V

th(VDD)

200

th(DEL)

threshold voltage on pin DEL

1.38

DEL

voltage on pin DEL

ch(DEL)

charge current on pin DEL

0.5

2.5

dch(DEL)

discharge current on pin DEL

DEL

= V

0.5

alarm pulse width

DEL

= 10 nF

Pin SIMCLK

i(SIMCLK)

clock input frequency

MHz

fall time

rise time

LOW-level input voltage

0.3V

DDI

HIGH-level input voltage

0.7V

DDI

+ 0.3 V

leakage current

DC-to-DC converter

osc

oscillator frequency

1.6

MHz

VUP

voltage on pin VUP

5 V card

6.0

3 V card

4.5

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

Pin SDA (open-drain)

LOW-level input voltage

0.3

+0.3V

DDI

HIGH-level input voltage

0.7V

DDI

HIGH-level leakage current

LOW-level input current

depends on the pull-up resistor

LOW-level output voltage

= 3 mA

0.3

Pin SCL (open-drain)

LOW-level input voltage

0.3

+0.3V

DDI

HIGH-level input voltage

0.7V

DDI

input leakage current

Pin SIMERR (100 k

pull-up resistor to V

DDI

)

LOW-level output voltage

< 1 mA

0.3V

DDI

HIGH-level output voltage

0.7V

DDI

Pins SAD0, SAD1 and PWROFF

LOW-level input voltage

0.3V

DDI

HIGH-level input voltage

0.7V

DDI

+ 0.3 V

input leakage current

Pin RST

output voltage

inactive mode; I

= 1 mA

0.3

+0.4

output current

inactive mode; pin RST short circuit
to ground

LOW-level output voltage

= 200

0.2

+0.3

HIGH-level output voltage

200

0.5

+ 0.2

fall time

= 30 pF

0.5

rise time

= 30 pF

0.5

Pin CLK

output voltage

inactive mode; I

= 1 mA

0.3

+0.4

output current

inactive mode; pin CLK short circuit
to ground

LOW-level output voltage

= 200

0.2

+0.3

HIGH-level output voltage

200

0.5

+ 0.2

fall time

= 30 pF

rise time

= 30 pF

clk

clock frequency

1 MHz power-down configuration

1.5

MHz

regular activity

MHz

duty factor

= 30 pF

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

Pin V

output voltage

inactive mode; I

= 1 mA

0.4

active mode; 5 V card; no load

4.85

5.10

5.40

active mode; 3 V card; no load

2.8

3.05

3.22

active mode; with 200 nF capacitor;
including static load (up to 20 mA)
and dynamic current pulses;
I

max

= 200 mA, f

max

= 5 MHz;

duration <400 ns

5 V card; 40 nAs pulses

4.60

5.40

3 V card; 24 nAs pulses

2.75

3.22

output current

inactive mode; pin V

short circuit

to ground

= 5 or 3 V; V

= 2.5 V

= 5 or 3 V; V

= 5.5 V

output current

short circuit to ground

120

slew rate on V

(rise and fall) C

L(max)

= 300 nF

0.05

0.17

0.25

Pin I/O

output voltage

inactive mode; I

= 1 mA

0.4

output current

inactive mode; pin I/O short circuit
to ground

LOW-level output voltage

= 1 mA

0.2

+0.4

HIGH-level output voltage

+25 < I

0.8V

+ 0.2

LOW-level input voltage

0.3

+0.8

HIGH-level input voltage

1.5

+ 0.3

LIH

HIGH-level input leakage
current

LOW-level input current

600

t(DI)

data input transition time

= 30 pF

t(DO)

data output transition time

= 30 pF

0.5

delay time on falling edge

500

pu(int)

internal pull-up resistance
between pins I/O and V

C1 version

C2 version

Pin SIMI/O

LOW-level output voltage

= 1 mA

0.2

+0.3

HIGH-level output voltage

with internal 20 k

pull-up resistor

to V

DDI

; I

= 10

DDI

0.3

DDI

+ 0.2 V

LOW-level input voltage

0.3

+0.3V

DDI

HIGH-level input voltage

0.7V

DDI

+ 0.3 V

LIH

HIGH-level input leakage
current

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2000

Apr

Philips Semiconductors

Product specification

C-b

us SIM card interf

ace

TD
A8003TS

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APPLICA

TION INFORMA

TION

MGR440

ndbook, full pagewidth

1.5 V

3 V

1.5 V

3 V

C5I

C6I

C7I

C8I

C1I

C2I

C3I

C4I

CARD READER

(1)

MICROCONTROLLER

VCC

P0-0

P1-0

P1-1

P1-2

P1-3

P1-4

P1-5

P1-6

P1-7

RST

P3-2

P3-1

P3-0

P3-3

P3-4

P3-5

P3-6

P3-7

XTAL2

XTAL1

VSS

P0-1

P0-2

P0-3

P0-4

P0-5

P0-6

P0-7

ALE

PSEN

P2-7

P2-0

P2-1

P2-2

P2-3

P2-4

P2-5

P2-6

33
pF

33 pF

10
nF

100 nF

14.74 MHz

TDA8003TS

SIMCLK

SAD1

SAD0

SDA

VDDI

SCL

SIMI/O

DEL

VDDS

RST

PRES

SIMERR

PGND

VDDP

VUP

I/O

SGND

CLK

VCC

PWROFF

100 nF

100

100 nF

2.2

100 nF

1.5 to

6 V

1.5 to 6 k

Fig.7 Application diagram.

(1) The switch is normally closed when the card is not present.

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

SOLDERING

Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

"Data Handbook IC26; Integrated Circuit Packages"

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250

C. The top-surface temperature of the

packages should preferable be kept below 230

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

For packages with leads on two sides and a pitch (e):

larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

For packages with leads on four sides, the footprint must
be placed at a 45

angle to the transport direction of the

printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45

angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

PACKAGE

SOLDERING METHOD

WAVE

REFLOW

(1)

BGA, LFBGA, SQFP, TFBGA

not suitable

suitable

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS

not suitable

(2)

suitable

PLCC

(3)

, SO, SOJ

suitable

LQFP, QFP, TQFP

not recommended

(3)(4)

suitable

SSOP, TSSOP, VSO

not recommended

(5)

suitable

2000 Apr 20

Philips Semiconductors

Product specification

C-bus SIM card interface

TDA8003TS

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS

PRODUCT

STATUS

DEFINITIONS

(1)

Objective specification

Development

This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.

Preliminary specification

Qualification

This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification

Production

This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DEFINITIONS

Short-form specification

The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition

Limiting values given are in

accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information

Applications that are

described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS

Life support applications

These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

PURCHASE OF PHILIPS I

C COMPONENTS

Purchase of Philips I

C components conveys a license under the Philips' I

C patent to use the

components in the I

C system provided the system conforms to the I

C specification defined by

Philips. This specification can be ordered using the code 9398 393 40011.

SCA

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000

Philips Semiconductors a worldwide company

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

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Tel. +61 2 9704 8141, Fax. +61 2 9704 8139

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
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Colombia: see South America

Czech Republic: see Austria

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905

Finland: Sinikalliontie 3, FIN-02630 ESPOO,
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Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,
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Tel. +91 22 493 8541, Fax. +91 22 493 0966

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Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
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Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880

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Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341

Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500

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Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398

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04547-130 SÃO PAULO, SP, Brazil,
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Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
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ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

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MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087

Uruguay: see South America

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Tel. +381 11 3341 299, Fax.+381 11 3342 553

Printed in The Netherlands

753504/03/pp

Date of release:

2000 Apr 20

Document order number:

9397 750 07034

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: TDA8003TS

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: TDA8003TS