Document Outline
- FEATURES
- GENERAL DESCRIPTION
- ORDERING INFORMATION
- BLOCK DIAGRAM
- PINNING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- QUALITY SPECIFICATION
- CHARACTERISTICS
- FLASHOVER PROTECTION
- TEST AND APPLICATION INFORMATION
- INTERNAL PIN CONFIGURATION
- PACKAGE OUTLINE
- SOLDERING
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
Supersedes data of 2000 Apr 19
File under Integrated Circuits, IC02
2000 Dec 13
INTEGRATED CIRCUITS
TDA6120Q
Video output amplifier
2000 Dec 13
2
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
FEATURES
High large-signal bandwidth of 32 MHz (typ.) at
125 V (p-p)
High small-signal bandwidth of 47 MHz (typ.) at
60 V (p-p)
Rise/fall time of 12.5 ns for 125 V (p-p)
High slew rate of 10 V/ns
Low static power dissipation of 2.6 W at 200 V supply
voltage
High maximum output voltage
Bandwidth independent of voltage gain
Maximum overall voltage gain over 46 dB
High Power Supply Rejection Ratio (PSRR)
Fast cathode current measurement output for dark
current control loop
Differential voltage input.
GENERAL DESCRIPTION
The TDA6120Q is a single 32 MHz, 125 V (p-p) video
output amplifier contained in a plastic DIL-bent-SIL power
package. The device uses high-voltage DMOS technology
and is intended to drive the cathodes of a CRT in High
Definition TVs (HDTVs) or monitors.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA6120Q
DBS13P
plastic DIL-bent-SIL power package; 13 leads (lead length 7.7 mm)
SOT141-8
2000 Dec 13
3
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
BLOCK DIAGRAM
handbook, full pagewidth
MGK440
1
1
CURRENT
INPUT
out 1
in
out 4
MIRROR
1
in
out
CASCODE
MIRROR
4
in
out
CASCODE
+
J
5 mA
0.7 pF
TDA6120Q
9, 11
6
2
n.c.
VCC
VIN
-
1
3
4
RC
-
RC
+
VIN
+
8
GND
12
13
7
OUTC
OUT
OUTM
IIN
VDD
10
5
Fig.1 Block diagram.
handbook, full pagewidth
MGK441
442
68 pF
C1
RC
-
RC
+
1
3
5
7
9
11
13
2
4
6
8
10
12
22
VIN
-
VIN
+
Cr
10 nF
CCC
47
F
CDD
10
F
CC
100
nF
CD
100
nF
TDA6120Q
22 k
Rf
IIN
OUTM
n.c.
n.c.
OUT
CRT
VIN
220
50
Rflash
VCC
VDD
Dflash
OUTC
GND
+
12 V
+
200 V
Vref
Ria
Ri
Fig.2 Top view.
2000 Dec 13
4
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
PINNING
SYMBOL
PIN
DESCRIPTION
RC
-
1
inverting input pre-emphasis
network
VIN
-
2
inverting voltage input
RC+
3
non-inverting input pre-emphasis
network
VIN+
4
non-inverting voltage input
IIN
5
feedback current input
V
CC
6
low supply voltage (12 V)
OUTM
7
cathode current measurement
output
GND
8
power ground
n.c.
9
not connected
V
DD
10
high supply voltage (200 V)
n.c.
11
not connected
OUTC
12
cathode output
OUT
13
feedback output
handbook, halfpage
RC
-
VIN
-
RC
+
VIN
+
IIN
VCC
OUTM
GND
n.c.
VDD
n.c.
OUTC
OUT
1
2
3
4
5
6
7
8
9
10
11
12
13
TDA6120Q
MGK438
Fig.3 Pin configuration.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DD
high supply voltage
0
280
V
V
CC
low supply voltage
0
20
V
V
i
input voltage (pins 2 and 4)
0
V
CC
V
V
i(dif)
differential mode input voltage (pins 2 and 4)
-
V
CC
+V
CC
V
V
i(pe)
pre-emphasis input voltage (pins 1 and 3)
0
V
CC
V
V
i(dif)(pe)
differential mode pre-emphasis input voltage (pins 1 and 3)
-
V
CC
+V
CC
V
V
IIN
input voltage (pin 5)
0
2V
BE
V
V
OUTM
measurement output voltage
0
20
V
V
o
output voltage (pins 12 and 13)
0
V
DD
V
T
stg
storage temperature
-
55
+150
C
T
j
junction temperature
-
20
+150
C
V
ESD
voltage peak human body model
-
2000
V
voltage peak machine model
-
300
V
2000 Dec 13
5
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
handbook, halfpage
-
20
160
20
0
(1)
(2)
4
MGK442
8
12
16
0
40
20
80
120
Tamb (
C)
Ptot
(W)
Fig.4 Power derating curve.
(1) Infinite heatsink.
(2) No heatsink.
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
Quality specification in accordance with
"SNW-FQ-611 part D".
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-c)
thermal resistance from junction to case
3.0
K/W
2000 Dec 13
6
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
CHARACTERISTICS
Operating range: T
j
=
-
20 to +150
C; V
DD
= 180 to 210 V; V
CC
= 10.8 to 13.2 V; V
OUTM
= 3 to 16.5 V;
V
VIN
-
= 1.5 to V
CC
-
6 V; V
VIN
+
= 1.5 to V
CC
-
6 V. Test conditions: T
j
= 25
C; V
DD
= 200 V; V
CC
= 12 V; V
VIN+
= 3 V;
V
OUTM
= 6 V; C
L
= 10 pF (C
L
consists of parasitic and cathode capacitance); R
th(h-a)
= 4 K/W; test circuit of Fig.5; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DD(q)
quiescent high voltage
supply current
V
OUTC
= 100 V
9
11
13
mA
I
CC(q)
quiescent low voltage supply
current
V
VIN
-
= V
VIN+
35
45
55
mA
I
bias
input bias current
(pins 2 and 4)
V
OUTC
= 100 V
-
76
-
A
V
OUTC
DC output voltage
(pins 12 and 13)
V
VIN
-
= V
VIN+
85
103
120
V
V
OUTC(T)
DC output voltage
temperature drift
(pins 12 and 13)
V
VIN
-
= V
VIN+
; temperature
range 30
C < T
j
< 110
C
-
100
-
25
+55
mV/K
I
(offset)OUTM
offset current of
measurement output
note 1
-
30
0
+30
A
I
OUTM
/
I
OUTC
linearity of current transfer
-
50
A < I
OUTC
< +50
A;
note 1
-
1.0
-
C
i
input capacitance
(pins 2 and 4)
V
OUTC
= V
OUTC(max)
-
4
-
pF
I
OUTC(max)
maximum dynamic peak
output current (pin 12)
20 V < V
OUTC
< V
DD
-
20 V
-
100
-
mA
V
OUTC(min)
minimum output voltage
(pin 12)
-
4
10
V
V
OUTC(max)
maximum output voltage
(pin 12)
V
DD
-
10
V
DD
-
6
-
V
V
CC(sw)
V
CC
switch level at which
pins OUT and OUTC
become HIGH
-
8.8
-
V
G
int
internal gain
1.68
1.87
2.08
B
s
small-signal bandwidth
(pin 12)
V
OUTC(AC)
= 60 V (p-p);
V
OUTC(DC)
= 100 V
40
47
-
MHz
B
l
large-signal bandwidth
(pin 12)
V
OUTC(AC)
= 125 V (p-p);
V
OUTC(DC)
= 100 V
28
32
-
MHz
t
pd
cathode output propagation
time 50% input to 50%
output (pin 12)
V
OUTC(AC)
= 125 V (p-p);
V
OUTC(DC)
= 100 V; square
wave; f < 1 MHz;
t
f(VIN
-)
= 10 ns;
t
r(VIN
-)
= 10 ns; see
Figs 6 and 7
10
-
15
ns
2000 Dec 13
7
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
Notes
1. The operating range of the measurement output OUTM is 3 to 16.5 V. Below 3 V, OUTM acts as a voltage source
with an output resistance such that the maximum current input from OUTM is 1.25 mA.
2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage.
t
o(r)
cathode output rise time
10% output to 90% output
(pin 12)
V
OUTC(AC)
= 125 V (p-p);
V
OUTC(DC)
= 100 V; square
wave; f < 1 MHz;
t
f(VIN
-)
= 10 ns;
t
r(VIN
-)
= 10 ns; see Fig.6
10
12.5
18
ns
t
o(f)
cathode output fall time 90%
output to 10% output
(pin 12)
V
OUTC(AC)
= 125 V (p-p);
V
OUTC(DC)
= 100 V; square
wave; f < 1 MHz;
t
f(VIN
-)
= 10 ns;
t
r(VIN
-)
= 10 ns; see Fig.7
10
12.5
15
ns
t
st
settling time 50% input to
(99%
<
output
<
101%)
(pin 12)
V
OUTC(AC)
= 125 V (p-p);
V
OUTC(DC)
= 100 V; square
wave f < 1 MHz;
t
f(VIN
-)
= 10 ns;
t
r(VIN
-)
= 10 ns; see
Figs 6 and 7
-
-
350
ns
SR
r
slew rate rise between
30 V to (V
DD
-
30 V) (pin 12)
V
VIN
-
= 2 V (p-p); square
wave; f < 1 MHz;
t
f(VIN
-)
= 10 ns;
t
r(VIN
-)
= 10 ns
-
8
-
V/ns
SR
f
slew rate fall between
(V
DD
-
30 V) to 30 V (pin 12)
V
VIN
-
= 2 V (p-p); square
wave; f < 1 MHz;
t
f(VIN
-)
= 10 ns;
t
r(VIN
-)
= 10 ns
-
10
-
V/ns
O
Vr
cathode output voltage
overshoot rise (pin 12)
V
OUTC(AC)
= 125 V (p-p);
V
OUTC(DC)
= 100 V; square
wave; f < 1 MHz;
t
f(VIN
-)
= 10 ns;
t
r(VIN
-)
= 10 ns; see
Figs 6 and 7
-
5
-
%
O
Vf
cathode output voltage
overshoot fall (pin 12)
V
OUTC(AC)
= 125 V (p-p);
V
OUTC(DC)
= 100 V; square
wave; f < 1 MHz;
t
f(VIN
-)
= 10 ns;
t
r(VIN
-)
= 10 ns; see
Figs 6 and 7
-
20
-
%
PSRRh
high voltage power supply
rejection ratio
f < 50 kHz; note 2
-
44
-
dB
PSRRl
low voltage power supply
rejection ratio
f < 50 kHz; note 2
-
48
-
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2000 Dec 13
8
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
handbook, full pagewidth
MGK443
442
22
Ria
Ri
47
RCC
47
RDD
147
Rflash
68 pF
22 k
Rf
C1
2 M
1 k
R3
100 k
R2
CCCC
50
Ra
Rba
1 k
Rbb
RC
-
VIN
-
VIN
+
12 V
+
200 V
Vref
RC
+
VIN
+
IIN
VCC
OUTM
GND
Im
VDD
OUTC
OUT
VOUT
1
2
C11
10
F
C10
22 nF
C13
10
F
47
F
CCC
10 nF
C8
6.8 pF
C7
3.3 pF
C9
136 pF
CDDD
10
F
CDD
10 nF
C12
22 nF
3
4
5
6
7
8
10
12
13
TDA6120Q
Fig.5 Test circuit with gain of 40 dB.
Overall gain
G
int
R
f
R
i
-----
=
2000 Dec 13
9
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
162.5
150
100
50
37.5
163.75
161.25
tst
overshoot (in %)
t
t
0
x
x
to(r)
Voc
Vi
MGK444
tpd
Fig.6 Output (pins 12 and 13; rising edge) as a function of input signal.
2000 Dec 13
10
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
162.5
150
100
50
37.5
38.75
36.25
overshoot (in %)
t
t
0
x
x
MGK445
Voc
Vi
tpd
tst
to(r)
Fig.7 Output (pins 12 and 13; falling edge) as a function of input signal.
FLASHOVER PROTECTION
The TDA6120Q needs an external protection diode
combined with a 50
resistor to protect the video amplifier
against CRT flashover discharge.
An external 147
carbon high-voltage resistor in
combination with a 2 kV spark gap between the cathode
and ground will limit the maximum clamp current (for this
resistor value, the CRT has to be connected to the main
printed-circuit board).
This external network causes an increase in the rise and
fall times and a decrease in the overshoot.
Pin 10 must be decoupled to pin 8:
By a capacitor >100 nF with good HF behaviour (e.g.
foil). This capacitor must be placed as close as possible
to pins 10 and 8; definitely within 5 mm.
By a capacitor >10
F on the picture tube base
printed-circuit board (common for 3 output stages).
2000 Dec 13
11
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
TEST AND APPLICATION INFORMATION
Dissipation
Regarding dissipation, distinction must be made between
static dissipation (independent of frequency) and dynamic
dissipation (proportional to frequency). The static
dissipation of the TDA6120Q is due to supply currents, and
currents in the feedback network and CRT.
The static dissipation is given by the following equation:
Where:
R
f
= feedback resistance
I
OUTC
= DC cathode current.
The dynamic dissipation is given by the following equation:
P
dyn
= V
DD
(C
L
+ C
int
)
f
V
OUTC(p-p)
b
Where:
C
L
= load capacitance
C
int
= effective internal load capacitance
(approximately 7 pF)
f = frequency
V
OUTC(p-p)
= output voltage (peak-to-peak value)
b = non-blanking duty cycle (0.8).
The IC must be mounted on the picture tube base
printed-circuit board to minimize the load capacitance C
L
.
Switch-off
The TDA6120Q is equipped with a switch-off circuit to
guarantee a controlled switch-off behaviour of the output
pins. The switch-off function is activated when the low
supply voltage (V
CC
) drops below a reference level
(V
CC(sw)
). Then the voltage at output pins OUT and OUTC
is pulled to the high supply voltage level (V
DD
),
independant of input pin voltage levels.
P
stat
V
CC
I
CC
V
DD
I
DD
V
OUTC
V
OUTC
R
f
------------------
V
OUTC
I
OUTC
+
=
2000 Dec 13
12
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
INTERNAL PIN CONFIGURATION
handbook, full pagewidth
MGK439
ESD
ESD
ESD
ESD
TDA6120Q
7
8
12
10
6
ESD
ESD
13
2
1
ESD
ESD
ESD
4
3
ESD
5
RC
+
VIN
+
RC
-
OUTC
VDD
VCC
OUT
OUTM
GND
VIN
-
IIN
Fig.8 Internal pin diagram.
2000 Dec 13
13
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
PACKAGE OUTLINE
UNIT
A
e
1
A
2
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
3
m
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
17.0
15.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
3.4
12.2
11.8
1.7
e
2
5.08
2.4
1.6
E
h
6
2.00
1.45
2.1
1.8
3.4
3.1
4.3
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
8.4
7.0
SOT141-8
0
5
10 mm
scale
Q
j
0.25
w
0.6
v
0.03
x
D
L
E
A
c
A
2
m
L
3
Q
w
M
b
p
1
d
Z
e
2
e
e
1
13
j
97-12-16
99-12-17
DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 7.7 mm)
SOT141-8
v
M
D
x
h
Eh
non-concave
view B: mounting base side
B
2000 Dec 13
14
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
SOLDERING
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our
"Data Handbook IC26; Integrated Circuit
Packages" (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
The total contact time of successive solder waves must not
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg(max)
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300
C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400
C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
PACKAGE
SOLDERING METHOD
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable
(1)
2000 Dec 13
15
Philips Semiconductors
Product specification
Video output amplifier
TDA6120Q
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
70
Philips Semiconductors a worldwide company
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China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands
753504/04/pp
16
Date of release:
2000 Dec 13
Document order number:
9397 750 07562
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