Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
1
December 15, 1994
853-1733 14477
DESCRIPTION
The SA601 is a combined RF amplifier and mixer designed for
high-performance low-power communication systems from
800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure
at 900MHz with 11.5dB gain and an IP3 intercept of -2dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than
0.2dB over -40 to +85
C temperature range. The
wide-dynamic-range mixer has a 9.5dB noise figure and IP3 of
2dBm at the input at 900MHz. The nominal current drawn from a
single 3V supply is 7.4mA. The Mixer can be powered down to
further reduce the supply current to 4.4mA.
FEATURES
Low current consumption: 7.4mA nominal, 4.4mA with the mixer
powered-down
Outstanding LNA noise figure: 1.6dB at 900MHz
High system power gain: 18dB (LNA + Mixer) at 900MHz
Excellent gain stability versus temperature and supply voltage
External >-7dBm LO can be used to drive the mixer
PIN CONFIGURATION
DK Package
1
2
3
4
5
6
7
8
9
10
11
12
13
14
20
19
18
17
16
15
VCC
GND
LNA OUT
GND
MIXER IN
GND
MIXER OUT
MIXER OUT
GND
VCC
VCC
LNA GND
LNA IN
GND
GND
GND
MIXER PWRDN
GND
LOIN1
LOIN2
APPLICATIONS
900MHz cellular front-end (NADC, GSM, AMPS, TACS)
900MHz cordless front-end (CT1, CT2)
900MHz receivers
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP)
-40 to +85
C
SA601DK
1563
BLOCK DIAGRAM
4
3
2
1
5
20
19
18
17
16
7
6
10
9
8
15
14
13
12
11
GND
MIXER
PWRDN
LO IN1
LO IN2
V
CC
GND
MIXER
IN
GND
MIXER
OUT
GND
LNA
LO
RF
IF
GND
LNA IN
GND
IF
GND
LNA
OUT
GND
GND
MIXER
OUT
V
CC
V
CC
BUFFER
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
2
ABSOLUTE MAXIMUM RATINGS
3
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
1
-0.3 to +6
V
V
IN
Voltage applied to any other pin
-0.3 to (V
CC
+ 0.3)
V
P
D
Power dissipation, T
A
= 25
C (still air)
2
20-Pin Plastic SSOP
980
mW
T
JMAX
Maximum operating junction temperature
150
C
P
MAX
Maximum power input/output
+20
dBm
T
STG
Storage temperature range
65 to +150
C
NOTE:
1. Transients exceeding 8V on V
CC
pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
JA
: 20-Pin SSOP
= 110
C/W
3. Pins 9 and 10 are sensitive to electrostatic discharge (ESD).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
2.7 to 5.5
V
T
A
Operating ambient temperature range
-40 to +85
C
T
J
Operating junction temperature
-40 to +105
C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T
A
= 25
C; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
CC
Supply current
7.4
mA
I
CC
Supply current
Mixer power-down input low
4.4
mA
V
LNAIN
LNA input bias voltage
0.78
V
V
LNAOUT
LNA output bias voltage
2.1
V
V
MXIN
Mixer RF input bias voltage
0.94
V
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
3
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T
A
= 25
C; LO
IN
= -7dBm @ 964MHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
-3
TYP
+3
UNITS
S
21
Amplifier gain
881MHz
10
11.5
13
dB
S
21
/
T
Gain temperature sensitivity
881MHz
0.003
dB/
C
S
21
/
f
Gain frequency variation
800MHz - 1.2GHz
0.01
dB/MHz
S
12
Amplifier reverse isolation
881MHz
-20
dB
S
11
Amplifier input match
1
881MHz
-10
dB
S
22
Amplifier output match
1
881MHz
-10
dB
P
-1dB
Amplifier input 1dB gain compression
881MHz
-16
dBm
IP3
Amplifier input third order intercept
f
2
f
1
= 25kHz, 881MHz
-3.5
-2
-0.5
dBm
NF
Amplifier noise figure
881MHz
1.3
1.6
1.9
dB
VG
C
Mixer voltage conversion gain: R
P
= R
L
= 1k
f
S
= 881MHz, f
LO
= 964MHz,
f
IF
= 83MHz
18.0
19.5
21.0
dB
PG
C
Mixer power conversion gain: R
P
= R
L
= 1k
f
S
= 881MHz, f
LO
= 964MHz,
f
IF
= 83MHz
5.0
6.5
8.0
dB
S
11M
Mixer input match
1
881MHz
-10
dB
NF
M
Mixer SSB noise figure
881MHz
8.0
9.5
11.0
dB
P
-1dB
Mixer input 1dB gain compression
881MHz
-13
dBm
IP3
M
Mixer input third order intercept
f
2
f
1
= 25kHz, 881MHz
-3.5
-2
-0.5
dBm
IP
2INT
Mixer input second order intercept
881MHz
12
dBm
P
RFM-IF
Mixer RF feedthrough
881MHz
-7
dB
P
LO-IF
LO feedthrough to IF
881MHz
-25
dB
P
LO-RFM
LO to mixer input feedthrough
881MHz
-38
dB
P
LO-RF
LO to LNA input feedthrough
881MHz
-40
dB
P
LNARFM
LNA output to mixer input
881MHz
-40
dB
P
RFMLO
Mixer input to LO feedthrough
881MHz
-23
dB
LO
IN
LO drive level
964MHz
-7
dBm
NOTE:
1. Simple L/C elements are needed to achieve specified return loss.
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
4
Figure 1. Application Circuit
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
Vcc
GND
LNA IN
GND
GND
MIXER PD
GND
LO IN
LO IN
Vcc
GND
LNA OUT
GND
MIXER IN
GND
MIXER OUT
MIXER OUT
GND
GND
Vcc
LNA IN
C1
C15
L1
56nH
C2
2.7pF
100pF
C11
100pF
C12
2.2pF
LNA OUT
C10
100pF
MIXER IN
C9
4.7pF
C13
100pF
270nH
C6
8.2pF
L = 110 mils
L = 95 mils
w = 15 mils
w = 15 mils
VCC
1
F
100pF
SA601
C4
U1
VCC
J1
C14
100nF
J2
EXT LO
(-7dBm, 964MHz)
J5
L = 190 mils
w = 15 mils
J4
VCC
18pF
2.2k
C8
100nF
MIXER OUT
J3
(50
, 83MHz)
C3
100pF
33pF
L3
L2
470nH
R2
C5
C7
L = 535 mils
w = 10 mils
L = 535 mils
w = 10 mils
*
SEE MIXER POWER GAIN NOTE BELOW
*
**
**
SPIRAL INDUCTORS ON NATURAL FR-4, 62 MILS THICK
**
** *
** *
SEE MIXER FILTER INTERFACE NOTE BELOW
CIRCUIT TECHNOLOGY
LNA
Impedance Match: Intrinsic return loss at the input and output ports
is 7dB and 9dB, respectively. With no external matching, the
associated LNA gain is
10dB and the noise figure is
1.4dB.
However, the return loss can be improved at 881MHz using
suggested L/C elements (Figure 1) as the LNA is unconditionally
stable.
Noise Match: The LNA achieves 1.6dB noise figure at 881MHz
when S
11
= -10dB. Further improvements in S
11
will slightly
decrease the NF and increase S
21
.
Temperature Compensation: The LNA has a built-in temperature
compensation scheme to reduce the gain drift to 0.003dB/
C from
40
C to +85
C.
Supply Voltage Compensation: Unique circuitry provides gain
stabilization over wide supply voltage range. The gain changes no
more than 0.5dB when V
CC
increases from 3V to 5V.
LO Drive Level: Resistor R1 can be replaced by an inductor of
4.7nH and C13 should be adjusted to achieve a good return loss at
the LO port. Under this condition, the mixer will operate with less
than -10dBm LO drive.
IP3 Performance: C9 between Pin 16 and ground can be removed
to introduce 3dB mismatch loss, while improving the IP3 to +3dBm.
The associated noise figure is 11dB.
Mixer
Input Match: The mixer is configured for maximum gain and best
noise figure. The user needs to supply L/C elements to achieve this
performance.
Power Gain: The gain can be increased by approximately 1.5dB by
placing R2 across C7, instead of C5.
Power Down: The mixer can be disabled by connecting Pin 7 to
ground. When the mixer is disabled, 3mA is saved.
Power Combining: The mixer output circuit features passive
power combining (patent pending) to optimize conversion gain and
noise figure performance without using extra DC current or
degrading the IP3. For IF frequencies significantly different than
83MHz, the component values must be altered accordingly.
Filter Interface: For system integration where a high impedance
filter of 1k
is to be cascaded at the mixer IF output, capacitors C5
and C6 need to be changed to 27pF and 1000pF, respectively.
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
5
Figure 2. SA601 Demoboard Layout (Not Actual Size)
Bottom View
Top View
Via Layer
Silk Screen
R1
C1
1
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
6
TYPICAL PERFORMANCE CHARACTERISTICS
CH1
S22
1
U
FS
4:
99.543
-85.949
8.937 pF
START
200.000 000 MHz
STOP
1200.000 000 MHz
1:
2:
3:
31.48
-14.217
900 MHz
44.82
-30.191
600 MHz
58.725
-50.83
400 MHz
200.000 000 MHz
Figure 3. LNA Input and Output Match (at Device Pin)
CH1
S11
1
U
FS
4:
63.852
-160.23
4.9269 pF
200.000 000 MHz
START
200.000 000 MHz
STOP
1200.000 000 MHz
1:
2:
3:
27.471
-35.48
600 MHz
21.286
-12.381
900 MHz
36.43
-70.445
400 MHz
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
7
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
CH1
S12
100 mU FS
4:
35.343 mU
-76.128
200.000 000 MHz
START
200.000 000 MHz
STOP
1200.000 000 MHz
1:
2:
3:
89.561mU
61.127
900 MHz
74.51mU
64.608
600 MHz
58.082mU
67.162
400 MHz
CH1
S21
7
U
FS
4:
6.2863 U
-150.58
200.000 000 MHz
START
200.000 000 MHz
STOP
1200.000 000 MHz
1:
2:
3:
3.2504U
91.219
900 MHz
4.6877U
112.03
600 MHz
5.3895U
130.33
400 MHz
Figure 4. LNA Transmission and Isolation Characteristics (at Device Pin)
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
8
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
CH1
S11
1
U
FS
4:
10.867
1.6426
1.2543 nH
200.000 000 MHz
START
200.000 000 MHz
STOP
1200.000 000 MHz
1:
6.7168
9.5952
900 MHz
Figure 5. Mixer RF Input Match (at Device Pin)
Table 1. Typical LNA and Mixer S-Parameters
LNA
Mixer
f
S
11
S
22
S
21
S
12
S
11
200MHz
63.852
j 160.23
99.543
j 85.949
6.2863U
150.58
35.343mU
76.128
10.867
+ j 1.6426
300MHz
44.879
j 101.69
73.387
j 67.707
5.8096U
140.47
47.946mU
71.169
10.4
+ j 3.4609
400MHz
36.43
j 70.445
58.725
j 50.83
5.3895U
130.33
58.082mU
67.162
10.067
+ j 4.897
500MHz
30.395
j 48.393
49.928
j 38.813
5.0428U
120.5
66.44mU
66.388
9.394
+ j 6.0142
600MHz
27.471
j 35.48
44.82
j 30.191
4.6877U
112.03
74.51mU
64.608
8.8945
+ j 7.2227
700MHz
24.428
j 25
39.268
j 24.502
4.2409U
104.44
82.235mU
65.002
8.1353
+ j 8.1597
800MHz
22.434
j 17.255
34.664
j 18.59
3.7491U
97.765
86.582mU
62.743
7.976
+ j 9.1958
900MHz
21.286
j 12.381
31.48
j 14.217
3.2504U
91.219
89.561mU
61.127
6.7168
+ j 9.5952
1000MHz
20.261
j 8.7109
27.887
j 10.77
2.8785U
84.957
95.135mU
60.539
6.2393
+ j 10.271
1100MHz
19.718
j 6.252
25.741
j 8.2607
2.5752U
82.893
97.348mU
62.202
6.0791
+ j 10.571
1200MHz
19.101
j 4.9316
23.584
j 6.2715
2.1386U
80.257
96.558mU
61.563
5.8185
+ j 10.288
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
9
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
CH1 S 11
log MAG
2 dB/ REF -5 dB
-40
C
85
C
25
C
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
Mixer RF Input Match vs. Frequency
(V
CC
= 3V)
CH1 S 12
log MAG
5 dB/ REF -10 dB
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
CH1 S21
log MAG
1 dB/ REF 10 dB
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
CH1 S 22
log MAG
3 dB/ REF -10 dB
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
CH1 S 11
log MAG
1 dB/ REF -10 dB
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
-40
C
85
C
25
C
LNA Gain (S
21
) vs. Frequency
(V
CC
= 3V)
-40
C
85
C
25
C
-40
C
85
C
25
C
-40
C
85
C
25
C
LNA Isolation (S
12
) vs. Frequency
(V
CC
= 3V)
LNA Input Match (S
11
) vs. Frequency
(V
CC
= 3V)
LNA Output Match (S
22
) vs. Frequency
(V
CC
= 3V)
9
Icc (mA)
VCC (V)
I
CC
vs. V
CC
and Temperature
2.5
3
3.5
4
4.5
5
5.5
8.5
8
7.5
7
6.5
6
5.5
5
40
C
25
C
+85
C
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
10
7
6.5
6
5.5
5
2.5
3
3.5
4
4.5
5
5.5
GAIN (dB)
VCC (V)
Mixer Gain @ 83MHz vs. V
CC
and Temperature
3
GAIN (dB)
2.5
3
3.5
4
4.5
5
5.5
VCC (V)
2
1
0
1
2
3
4
5
6
7
Mixer IP3 @ 83MHz vs. V
CC
and Temperature
40
C
25
C
+85
C
40
C
25
C
+85
C
+70
C
12
NF (dB)
2.5
3
3.5
4
4.5
5
5.5
VCC (V)
Mixer NF @ 83MHz vs. V
CC
and Temperature
11.5
11
10.5
10
9.5
9
40
C
25
C
+85
C
36
dB
VCC (V)
LO to Mixer in Feedthrough vs. V
CC
37
38
39
40
2.5
3
3.5
4
4.5
5
5.5
36
dB
VCC (V)
LO to LNA Input Feedthrough vs. V
CC
37
38
39
40
2.5
3
3.5
4
4.5
5
5.5
20
dB
VCC (V)
Mixer Input to LO Feedthrough vs. V
CC
2.5
3
3.5
4
4.5
5
5.5
21
22
23
24
25
Philips Semiconductors RF Communications Products
Product specification
SA601
Low voltage LNA and mixer - 1GHz
December 15, 1994
11
23
dB
VCC (V)
LO Feedthrough to IF vs. V
CC
2.5
3
3.5
4
4.5
5
5.5
24
25
26
27
5
dB
VCC (V)
Mixer RF Feedthrough vs. V
CC
2.5
3
3.5
4
4.5
5
5.5
6
7
8
38
dB
VCC (V)
LNA Output to Mixer Input vs. V
CC
2.5
3
3.5
4
4.5
5
5.5
39
40
41
42
12.50
GAIN (dB)
VCC (V)
LNA Gain vs. V
CC
and Temperature
2.5
3
3.5
4
4.5
5
5.5
12.00
11.50
11.00
10.50
40
C
25
C
+85
C
4.00
dB
VCC (V)
LNA IP3 vs. V
CC
and Temperature
2.5
3
3.5
4
4.5
5
5.5
2.00
0.00
2.00
4.00
6.00
8.00
10.00
40
C
25
C
+85
C
2.50
dB
VCC (V)
LNA NF vs. V
CC
and Temperature
2.5
3
3.5
4
4.5
5
5.5
2.00
1.50
1.00
0.50
0.00
40
C
25
C
+85
C
PDF 
ZIP