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Электронный компонент: PZ1418B15UJ

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DATA SHEET
Product specification
Supersedes data of November 1994
1997 Feb 19
DISCRETE SEMICONDUCTORS
PZ1418B15U
NPN microwave power transistor
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Internal input and output prematching ensures good
stability and easy broadband use.
APPLICATIONS
Common base class-B wideband amplifiers under CW
conditions in military and professional applications, and
to drive the type PZ1418B30U.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
RF performance up to T
mb
= 25
C in a common base class-B wideband amplifier.
MODE OF OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
p
(dB)
C
(%)
Z
i
; Z
L
(
)
Class-B
1.4 to 1.8
28
12.5
7
38
see Figs 6
and 7
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
40
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
CES
collector-emitter voltage
R
BE
= 0
-
35
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
collector current (DC)
-
2
A
P
tot
total power dissipation
T
mb
75
C
-
27
W
T
stg
storage temperature
-
65
+200
C
T
j
operating junction temperature
-
200
C
T
sld
soldering temperature
-
235
C
Fig.2
Power derating curve.
handbook, halfpage
0
30
20
10
0
50
100
200
150
MGD969
Ptot
(W)
Tmb (
C)
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
THERMAL CHARACTERISTICS
Note
1. See "
Mounting recommendations in the General part of handbook SC15".
CHARACTERISTICS
T
mb
= 25
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
C in a common base class B wideband amplifier.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
thermal resistance from junction to mounting-base
T
j
= 75
C
4
K/W
R
th mb-h
thermal resistance from mounting-base to heatsink
T
j
= 75
C; note 1
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 40 V; I
E
= 0
5
mA
V
CB
= 30 V; I
E
= 0
2.5
mA
I
CES
collector cut-off current
V
CE
= 35 V; R
BE
= 0
25
mA
I
EBO
emitter cut-off current
V
EB
= 1.5 V; I
C
= 0
100
A
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
p
(dB)
C
(%)
Z
i
; Z
L
(
)
Class-B
1.4 to 1.8
28
12.5
typ. 15
7
typ. 7.8
38
typ. 45
see Figs 6 and 7
Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation.
Dimensions in mm.
Substrate: Epsilam printed circuit board.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
handbook, full pagewidth
100 pF
(ATC)
output
50
input
50
,,,,,,,,
,,,,,,,,
,,,,,,,,
,
,
,
,
,,
,,
,
,
,
,
,,
,,
,,
,
,
,,
,,
,,
,
,
,
,
,
,,
,,
,
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
30
13.5
2
4.5
2
6
4.5
7.5
14.5
4.5
1
9
30
15
5
1
2.5
2
4
0.5
5
MSA110
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
Fig.4
Load power as a function of input power;
typical values.
Class-B operation; V
CC
= 28 V; T
mb
= 25
C.
(1) 1.6 GHz.
(2) 1.4 GHz.
(3) 1.8 GHz.
handbook, halfpage
0
1
2
3
20
0
PL
(W)
Pi (W)
10
MGD983
(1)
(2)
(3)
Fig.5
Load power, efficiency and VSWR as
functions of frequency; typical values.
Class-B operation; V
CC
= 28 V; T
mb
= 25
C; P
i
= 2.5 W.
handbook, halfpage
1.4
1.5
1.9
20
15
5
0
PL
PL
(W)
60
50
40
2
VSWR
C
(%)
C
1
f (GHz)
10
1.6
1.7
1.8
MGD987
VSWR
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
Fig.6 Input impedance as a function of frequency; typical values.
Z
o
= 5
.
handbook, full pagewidth
MGL022
0.2
0.5
1
2
5
0.2
0.5
1
2
5
0
0.2
0.5
1
2
5
10
+
j
-
j
1.4 GHz
1.6
1.8
5
10
10
Fig.7 Optimum load impedance as a function of frequency; typical values.
Z
o
= 5
.
handbook, full pagewidth
MGL023
0.2
0.5
1
2
5
0.2
0.5
1
2
5
0
0.2
0.5
1
2
5
10
+
j
-
j
1.8 GHz
1.6
1.4
5
10
10
1997 Feb 19
7
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
PACKAGE OUTLINE
Dimensions in mm.
Torque on screw: Max. 0.5 Nm.
Recommended screw: M3.
Fig.8 SOT443A.
handbook, full pagewidth
MBC663
10.5
max
10.5
max
23
max
16.5
3.4
3.2
3.1
4 min
Y
X
0.5 X
0.5 X
0.5 Y
1
2
3
3.5
2.9
0.1
1.7 max
6.4
max
24 max
0.5 Y
seating plane
1997 Feb 19
8
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Feb 19
9
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
NOTES
1997 Feb 19
10
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
NOTES
1997 Feb 19
11
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number:
9397 750 01709