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Электронный компонент: PXB16050U

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DATA SHEET
Product specification
Supersedes data of June 1992
1997 Feb 19
DISCRETE SEMICONDUCTORS
PXB16050U
NPN microwave power transistor
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
FEATURES
Input and output matching cells
allow an easier design of circuits
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
stable characteristics and excellent
lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common-base class C power
amplifiers at frequencies between
1.5 and 1.8 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to the
flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
C in a common base class C
narrowband amplifier.
PINNING - SOT439A
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
po
(dB)
C
(%)
Z
i
/Z
L
(
)
Class C (CW)
1.65
28
>45
>8.5
>45
see Figs 6 and 7
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
Fig.1 Simplified outline and symbol.
handbook, 4 columns
e
c
b
MAM045
1
2
Top view
3
3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
45
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
CES
collector-emitter voltage
R
BE
= 0
-
45
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
collector current (DC )
-
6
A
P
tot
total power dissipation
T
mb
= 75
C
-
67
W
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
T
sld
soldering temperature
t
10 s; note 1
-
235
C
Fig.2
Power derating curve.
P
tot max
= 67 W.
handbook, halfpage
-
50
200
100
0
20
40
60
80
0
Ptot
(W)
100
Tmb (
C)
MGL038
Fig.3
Load power as a function of input power
(see Fig.4).
V
CC
= 28 V; f = 1.65 GHz.
handbook, halfpage
0
60
40
20
0
2
4
8
Pi (W)
PL
(W)
6
MGL037
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
THERMAL CHARACTERISTICS
Note
1. See "
Mounting recommendations in the General part of handbook SC19a".
CHARACTERISTICS
T
mb
= 25
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
C measured in the common base test circuit as shown in Fig.4 and working in
CW class C mode.
Note
1. Type PXB16050U may be used for narrowband or broadband amplifiers within the frequency range 1.5 to 1.8 GHz.
Operation below 1.5 GHz may damage the transistor due to resonance of the internal output prematching circuit.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
thermal resistance from junction to mounting base
T
j
= 100
C
1.5
K/W
R
th mb-h
thermal resistance from mounting base to heatsink
note 1
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 40 V; I
E
= 0
3
mA
V
CB
= 45 V; I
E
= 0
15
mA
I
CES
collector cut-off current
V
CE
= 30 V; R
BE
= 0
3
mA
I
EBO
emitter cut-off current
V
EB
= 1.5 V; I
C
= 0
300
A
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
po
(dB)
C
(%)
Z
i
/Z
L
(
)
Class C (CW);
see note 1
1.65
28
45; typ. 50
8.5; typ. 9.5
45; typ. 52
see Figs 6
and 7
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
Fig.4 Narrowband test circuit.
Substrate: Teflon fibreglass.
Permittivity:
r
= 2.55.
Thickness: 0.8 mm.
The narrowband test circuit is split into two totally independent halves each being 30
40 mm in size.
handbook, full pagewidth
MGK069
C3
L2
L1
C4
C1
C2
+
VCC
-
VCC
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
List of components (see Fig.4)
COMPONENT
DESCRIPTION
VALUE
CATALOGUE NO.
L1
4 turns 0.5 mm diameter copper wire
internal diameter = 2 mm
-
-
L2
5 turns 0.5 mm diameter copper wire
internal diameter = 2 mm
-
-
C1
DC blocking capacitor
100 pF
ATC
C2
feedthrough bypass capacitor
-
Erie 1250-003
C3, C4
trimmer
0.6 to 4.5 pF
Tekelec AT-3-7271SL
Fig.5 Narrowband test circuit dimensions.
Dimensions in mm.
handbook, full pagewidth
MGL036
output
50
input
50
10.5
5
3.5
2.5
5
9
5
4
3
3
2.24
2.24
5
5
4
7
7.5
3
4
7.5
4
9.5
1997 Feb 19
7
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
Fig.6 Input impedance as a function of frequency; typical values.
V
CC
= 28 V; Z
O
= 10
.
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+
j
j
1.5 GHz
1.8
Z i
MCD623
0.5
1
0.2
10
5
2
Fig.7 Optimum load impedance as a function of frequency; typical values.
V
CC
= 28 V; Z
O
= 10
.
handbook, full pagewidth
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
j
1.8 GHz
ZL
1.5
MCD622
0.5
1
0.2
10
5
2
1997 Feb 19
8
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
PACKAGE OUTLINE
Fig.8 SOT439A.
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.
handbook, full pagewidth
0.15 max
3.3
2.9
12.85 max
6
max
1.6 max
23 max
3
seating plane
MBC881
2
1
3.7
max
2.7
min
10.3
10.0
9.85
max
2.7
min
8.25
16.5
3.3
1997 Feb 19
9
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Feb 19
10
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
NOTES
1997 Feb 19
11
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number:
9397 750 01732