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Электронный компонент: NE5539

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Philips
Semiconductors
NE/SE5539
High frequency operational amplifier
Product data
Supersedes data of 2001 Aug 03
File under Integrated Circuits, IC11 Data Handbook
2002 Jan 25
INTEGRATED CIRCUITS
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2
2002 Jan 25
853-0814 27610
DESCRIPTION
The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic
operational amplifier for use in video amplifiers, RF amplifiers, and
extremely high slew rate amplifiers.
Emitter-follower inputs provide a true differential input impedance
device. Proper external compensation will allow design operation
over a wide range of closed-loop gains, both inverting and
non-inverting, to meet specific design requirements.
FEATURES
Bandwidth
Unity gain: 350 MHz
Full power: 48 MHz
GBW: 1.2 GHz at 17 dB
Slew rate: 600/V
s
A
VOL
: 52 dB typical
Low noise: 4 nV
Hz typical
PIN CONFIGURATION
+ INPUT
NC
V
SUPPLY
INPUT
NC
NC
NC
V
OS
ADJ/
A
V
ADJ
GROUND
+V
NC
OUTPUT
D, N Packages
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
TOP VIEW
FREQUENCY
COMPENS.
+
SL00570
Figure 1. Pin Configuration
APPLICATIONS
High speed datacom
Video monitors & TV
Satellite communications
Image processing
RF instrumentation & oscillators
Magnetic storage
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
14-Pin Plastic Dual In-Line Package (DIP)
0
C to +70
C
NE5539N
SOT27-1
14-Pin Plastic Small Outline (SO) package
0
C to +70
C
NE5539D
SOT108-1
14-Pin Plastic Dual In-Line Package (DIP)
55
C to +125
C
SE5539N
SOT27-1
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
12
V
P
D(max)
Maximum power dissipation; T
amb
= 25
C (still-air)
2
N package
1.45
W
D package
0.99
W
Operating temperature range
T
amb
NE5539D, NE5539N
0 to +70
C
SE5539N
55 to +125
C
T
stg
Storage temperature range
65 to +150
C
T
j
Max junction temperature
+150
C
T
sld
Lead soldering temperature (10 sec max)
+230
C
NOTES:
1. Differential input voltage should not exceed 0.25 V to prevent excessive input bias current and common-mode voltage 2.5 V. These voltage
limits may be exceeded if current is limited to less than 10 mA.
2. Derate above 25
C, at the following rates:
N package at 11.6 mW/
C
D package at 7.9 mW/
C
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
3
EQUIVALENT CIRCUIT
() 14
INVERTING INPUT
(+) 1
NONINVERTING
INPUT
5
(3) VCC
(7) GRD
(8) OUTPUT
(10) +VCC
(12) FREQUENCY COMP.
2.2k
R18
R19
R3
R5
R2
R6
R8
Q1
Q2
Q4
Q3
Q6
Q5
Q7
Q8
R20
R1
R4
R21
R9
R10
R7
R17
R16
Q9
Q10
R13
R11
R12
R14
R15
Q11
SL00571
Figure 2. Equivalent Circuit
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
4
DC ELECTRICAL CHARACTERISTICS
V
CC
=
8 V, T
amb
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5539
NE5539
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
V
OS
Input offset voltage
V
O
= 0 V;
Over temp.
2
5
mV
V
OS
Input offset voltage
O
R
S
= 100
T
amb
= 25
C
2
3
2.5
5
mV
V
OS
/
T
5
5
V/
C
I
OS
Input offset current
Over temp.
0.1
3
A
I
OS
Input offset current
T
amb
= 25
C
0.1
1
2
A
I
OS
/
T
0.5
0.5
nA/
C
I
Input bias current
Over temp.
6
25
A
I
B
Input bias current
T
amb
= 25
C
5
13
5
20
A
I
B
/
T
10
10
nA/
C
CMRR
Common mode rejection ratio
F = 1 kHz; R
S
= 100
; V
CM
1.7 V
70
80
70
80
dB
CMRR
Common mode rejection ratio
Over temp.
70
80
dB
R
IN
Input impedance
100
100
k
R
OUT
Output impedance
10
10
R
L
= 150
to GND
+Swing
+2.3
+2.7
V
L
and 470
to V
CC
Swing
1.7
2.2
V
V
O
Output voltage swing
R
L
= 25
to GND
+Swing
+2.3
+3.0
V
V
OUT
Output voltage swing
L
Over temp.
Swing
1.5
2.1
V
R
L
= 25
to GND
+Swing
+2.5
+3.1
V
L
T
amb
= 25
C
Swing
2.0
2.7
V
I
CC
Positive supply current
V
O
= 0 V, R
1
=
; Over temp.
14
18
mA
I
CC+
Positive supply current
V
O
= 0 V, R
1
=
; T
amb
= 25
C
14
17
14
18
mA
I
CC
Negative supply current
V
O
= 0 V, R
1
=
; Over temp.
11
15
mA
I
CC
Negative supply current
V
O
= 0 V, R
1
=
; T
amb
= 25
C
11
14
11
15
mA
PSRR
Power supply rejection ratio
V
CC
=
1 V; Over temp.
300
1000
V/V
PSRR
Power supply rejection ratio
V
CC
=
1 V; T
amb
= 25
C
200
1000
V/V
V
O
= +2.3 V, 1.7 V;
R
L
= 150
to GND, 470
to V
CC
47
52
57
dB
A
L
i
l
lt
i
V
O
= +2.3 V, 1.7 V;
Over temp.
dB
A
VOL
Large signal voltage gain
O
,
R
L
= 2
to GND
T
amb
= 25
C
47
52
57
dB
V
O
= +2.5 V, 2.0 V;
Over temp.
46
60
dB
O
,
R
L
= 2
to GND
T
amb
= 25
C
48
53
58
dB
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
5
DC ELECTRICAL CHARACTERISTICS
V
CC
=
6 V, T
amb
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5539
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
OS
Input offset voltage
Over temp.
2
5
mV
V
OS
Input offset voltage
T
amb
= 25
C
2
3
mV
I
OS
Input offset current
Over temp.
0.1
3
A
I
OS
Input offset current
T
amb
= 25
C
0.1
1
A
I
Input bias current
Over temp.
5
20
A
I
B
Input bias current
T
amb
= 25
C
4
10
A
CMRR
Common-mode rejection ratio
V
CM
=
1.3 V; R
S
= 100
70
85
dB
I
CC
Positive supply current
Over temp.
11
14
mA
I
CC+
Positive supply current
T
amb
= 25
C
11
13
mA
I
CC
Negative supply current
Over temp.
8
11
mA
I
CC
Negative supply current
T
amb
= 25
C
8
10
mA
PSRR
Power supply rejection ratio
V
CC
=
1 V
Over temp.
300
1000
V/V
PSRR
Power supply rejection ratio
V
CC
=
1 V
T
amb
= 25
C
V/V
Over temp
+Swing
+1.4
+2.0
V
O
Output voltage swing
R
L
= 150
to GND
Over temp.
Swing
1.1
1.7
V
V
OUT
Output voltage swing
L
and 390
to V
CC
T
= 25
C
+Swing
+1.5
+2.0
V
T
amb
= 25
C
Swing
1.4
1.8
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
6
AC ELECTRICAL CHARACTERISTICS
V
CC
=
8 V, R
L
= 150
to GND and 470
to V
CC
, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5539
NE5539
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
BW
Gain bandwidth product
A
CL
= 7, V
O
= 0.1 V
P-P
1200
1200
MHz
Small signal bandwidth
A
CL
= 2, R
L
= 150
1
110
110
MHz
t
S
Settling time
A
CL
= 2, R
L
= 150
1
15
15
ns
SR
Slew rate
A
CL
= 2, R
L
= 150
1
600
600
V/
s
t
PD
Propagation delay
A
CL
= 2, R
L
= 150
1
7
7
ns
Full power response
A
CL
= 2, R
L
= 150
1
48
48
MHz
Full power response
A
V
= 7, R
L
= 150
1
20
20
MHz
Input noise voltage
R
S
= 50
, 1 MHz
4
4
nV/
Hz
Input noise current
1 MHz
6
6
pA/
Hz
NOTE:
1. External compensation.
AC ELECTRICAL CHARACTERISTICS
V
CC
=
6 V, R
L
= 150
to GND and 390
to V
CC
, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5539
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BW
Gain bandwidth product
A
CL
= 7
700
MHz
BW
Small signal bandwidth
A
CL
= 2
1
120
MHz
t
S
Settling time
A
CL
= 2
1
23
ns
SR
Slew rate
A
CL
= 2
1
330
V/
s
t
PD
Propagation delay
A
CL
= 2
1
4.5
ns
Full power response
A
CL
= 2
1
20
MHz
NOTE:
1. External compensation.
TYPICAL PERFORMANCE CURVES
NE5539 Open-Loop Phase
0
90
180
270
360
1 MHz
10MHz
100MHz
1GHz
FREQUENCY (Hz)
PHASE (DEG)
SL00572
Figure 3. NE5539 Open-Loop Phase
NE5539 Open-Loop Gain
60
50
40
30
20
10
0
1 MHz
10MHz
100MHz
1GHz
FREQUENCY (Hz)
GAIN (dB)
SL00573
Figure 4. NE5539 Open-Loop Gain
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
7
TYPICAL PERFORMANCE CURVES
(Continued)
dB BELOW REF
Power Bandwidth (SE)
Power Bandwidth (NE)
SE5539 Open-Loop Gain vs Frequency
Power Bandwidth
SE5539 Open-Loop Phase vs Frequency
Gain Bandwidth Product vs Frequency
5
4
3
2
1
GAIN (--2)
VCC = +8V
RL = 2k
3dB B.W
1 MHz
10MHz
100MHz
300Mhz
pp OUTPUT (V)
FREQUENCY (Hz)
3dB B.W.
1 MHz
10MHz
100MHz
300Mhz
FREQUENCY (Hz)
pp OUTPUT (V)
4
3
2
1
0
VCC = +6V
RL = 150k
GAIN (--2)
1 MHz
10MHz
100MHz
300Mhz
FREQUENCY (Hz)
VCC = +6V
RL = 126
0
o
50
40
30
20
10
GAIN (dB)
22
20
18
16
14
12
1MHz
10MHz
100MHz
FREQUENCY (Hz)
GAIN (dB)
3dB BANDWIDTH
3dB BANDWIDTH
AV = X7.5
AV = X10
VCC =
6V
RL = 150
300MHz
1MHz
10MHz
100MHz
FREQUENCY (Hz)
300MHz
GAIN (7)
RL = 150
REF
3.04V
P-P
2
4
6
8
10
12
1MHz
10MHz
100MHz
FREQUENCY (Hz)
300MHz
VCC =
6V
RL = 126
PHASE (DEG)
0
45
90
135
180
NOTE:
Indicates typical
distribution 55
C
Tamb
125
C
SL00574
Figure 5. Typical Performance Curves
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
8
CIRCUIT LAYOUT CONSIDERATIONS
As may be expected for an ultra-high frequency, wide-gain
bandwidth amplifier, the physical circuit is extremely critical.
Bread-boarding is not recommended. A double-sided copper-clad
printed circuit board will result in more favorable system operation.
An example utilizing a 28 dB non-inverting amp is shown in Figure 6.
R5 = 20k TRIMPOT (CERMET)
RF = 1.5k (28dB GAIN)
R6 = 470
5% CARBON
RFC 3T # 26 BUSS WIRE ON
FERROXCUBE VK 200 09/3B CORE
BYPASS CAPACITORS
1nF CERAMIC
(MEPCO OR EQUIV.)
Component Side
(Component Layout)
Bottom Plane
Copper
1
R5
R1
R2
VIN
R6
CC
RF
R5
--V
RFC
R4
RFC
X
X
X
X
X
X
X
X
X X
X
X
(1)
+V
OPTIONAL
OFFSET
ADJ.
+V
V
R5
R4
R1
75
RF
+V
RFC
14
10
8
3
7
NE5539
1nF
1nF
R3
75
VOUT
75
TERM
470
R6
RFC
1nF
1nF
--V
VIN
R2
+1
75
R1 = 75
5% CARBON
R2 = 75
5% CARBON
R3 = 75
5% CARBON
R4 = 36K 5% CARBON
Top Plane Copper
1
(Component Side)
SL00575
Figure 6. 28dB Non-Inverting Amp Sample PC Layout
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
9
NE5539 COLOR VIDEO AMPLIFIER
The NE5539 wideband operational amplifier is easily adapted for
use as a color video amplifier. A typical circuit is shown in Figure 7
along with vector-scope1 photographs showing the amplifier
differential gain and phase response to a standard five-step
modulated staircase linearity signal (Figures 8, 9 and 10). As can be
seen in Figure 9, the gain varies less than 0.5% from the bottom to
the top of the staircase. The maximum differential phase shown in
Figure 10 is approximately +0.1
.
The amplifier circuit was optimized for a 75
input and output
termination impedance with a gain of approximately 10 (20 dB).
NOTE:
1. The input signal was 200 mV and the output 2 V. V
CC
was
8 V.
7
75
750
--V
22nF
14
--
10
8
3
1
+
75
VIN
--V
22nF
470
75
--V
ZO = 75
1
6dB LOSS--1
75
SL00576
Figure 7. NE5539 Video Amplifier
SL00577
Figure 8. Input Signal
SL00578
Figure 9. Differential Gain <0.5%
NOTE:
Instruments used for these measurements were Tektronix 146
NTSC test signal generator, 520A NTSC vectorscope, and 1480
waveform monitor.
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
10
SL00579
Figure 10. Differential Gain +0.1
o
ZIN = 500
820
220
210pF
+
1
+2V
8V
470
8
NE5539
118
87
ZO = 50
14
1K
2K
CLEAD
1.5pF
SL00580
Figure 11. Non-Inverting Follower
+
1
+8V
8V
470
8
NE5539
118
87
14
3.3pF
1K
320
220pF
50
1K
SL00581
Figure 12. Inverting Follower
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
11
DIP14:
plastic dual in-line package; 14 leads (300 mil)
SOT27-1
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
12
SO14:
plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
13
NOTES
Philips Semiconductors
Product data
NE/SE5539
High frequency operational amplifier
2002 Jan 25
14
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Contact information
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Koninklijke Philips Electronics N.V. 2002
All rights reserved. Printed in U.S.A.
Date of release: 01-02
Document order number:
9397 750 09382
Philips
Semiconductors
Data sheet status
[1]
Objective data
Preliminary data
Product data
Product
status
[2]
Development
Qualification
Production
Definitions
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.