Электронный компонент: BZD142W-200

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DATA SHEET

Product specification
Supersedes data of 2000 May 01

2001 Oct 10

DISCRETE SEMICONDUCTORS

BZD142W
ZenBlock

TM

; zener with integrated

blocking diode

age

M3D121

2001 Oct 10

2

Philips Semiconductors

Product specification

ZenBlock

TM

; zener with

integrated blocking diode

BZD142W

FEATURES

�

Zener and 600 V/100 ns blocking function in one
package

(1)

�

Protects MOSFETS or power IC controllers such as
TINYSwitch

TM

(2)

, TOPSwitch

TM

(2)

and STARplug

TM

(3)

�

Glass passivated

�

Excellent clamping capability and stability

�

Supplied in 8 mm embossed tape.

DESCRIPTION

Cavity free cylindrical glass package through Implotec

TM

(4)

technology. This package is hermetically sealed and
fatigue free as coefficients of expansion of all used parts
are matched.

(1) Types BZD142W-68,-100 and -160 have a 600 V blocking

diode with a minimum t

rr

of 1000 ns.

(2) TINYSwitch and TOPSwitch are trademarks of Power

Integrations.

(3) STARplug is a trademark of Koninklijke Philips Electronics

N.V.

(4) Implotec is a trademark of Koninklijke Philips Electronics N.V.

handbook, halfpage

MAM433

Fig.1 Simplified outline (SOD87).

LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

T

stg

storage temperature

-

65

+150

�

C

T

j

junction temperature

-

65

+150

�

C

Limiting values zener

P

tot

total power dissipation

T

tp

= 105

�

C; see Fig.2

-

1.5

W

P

RSM

non-repetitive peak reverse power
dissipation

10/1000

�

s exponential pulse;

T

j

= 25

�

C prior to surge; see Fig.5

-

100

W

Limiting values blocking diode

V

R

continuous reverse voltage

-

600

V

E

RSM

non-repetitive peak reverse
avalanche energy

L = 120 mH; T

j

= T

j max

prior to

surge; inductive load switched off

-

7.5

mJ

2001 Oct 10

3

Philips Semiconductors

Product specification

ZenBlock

TM

; zener with

integrated blocking diode

BZD142W

ELECTRICAL CHARACTERISTICS ZENER/TVS
T

j

= 25

�

C unless otherwise specified.

Notes

1. To complete the type number the suffix is added to the basic type number, e.g. BZD142W-68.

2. Non-repetitive peak reverse current in accordance with

"IEC 60060-1, Section 8" (10/1000

�

s pulse); see Fig.5.

ELECTRICAL CHARACTERISTICS BLOCKING DIODE
T

j

= 25

�

C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

40

�

m, see Fig.4.

For more information please refer to the

"General Part of associated Handbook".

TYPE

NUMBER

SUFFIX

(1)

WORKING VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

CLAMPING

VOLTAGE

REVERSE CURRENT

at STAND-OFF

VOLTAGE

V

Z

(V) at I

test

S

Z

(%/K) at I

test

I

test

(mA)

V

(CL)R

(V)

at I

RSM

(A)

(2)

I

R

(

�

A)

at V

R

(V)

MIN.

NOM.

MAX.

MIN.

MAX.

MAX.

MAX.

68

61

68

75

0.07

0.12

10

106

0.94

5

56

100

90

100

110

0.07

0.12

5

139

0.72

5

82

160

149

160

171

0.07

0.12

5

224

0.45

5

130

180

162

180

198

0.07

0.12

5

250

0.40

5

150

200

180

200

220

0.07

0.12

5

277

0.36

5

160

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)R

reverse avalanche breakdown
voltage

I

R

= 0.1 mA

700

-

-

V

I

R

reverse current

V

R

= 600 V

-

-

5

�

A

V

R

= 600 V; T

j

= 150

�

C

-

-

100

�

A

C

d

diode capacitance

f = 1 MHz; V

R

= 0 V;

see Fig.3

-

15

-

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R

th j-tp

thermal resistance from junction to tie-point

30

K/W

R

th j-a

thermal resistance from junction to ambient

note 1

150

K/W

2001 Oct 10

4

Philips Semiconductors

Product specification

ZenBlock

TM

; zener with

integrated blocking diode

BZD142W

GRAPHICAL DATA

handbook, halfpage

0

3.0

2.0

1.0

0

40

200

T (

�

C)

P

(W)

80

120

160

MBL106

Fig.2

Maximum total power dissipation as a
function of temperature.

Solid line: tie-point temperature.

Dotted line: ambient temperature;
device mounted (see Fig.4).

handbook, halfpage

10

2

10

1

MBL107

1

10

Cd

(pF)

VR (V)

10

2

10

3

Fig.3

Diode capacitance as a function of reverse
voltage; typical values.

f = 1 MHz; T

j

= 25

�

C.

MSB213

4.5

2.5

1.25

50

50

Fig.4 Printed-circuit board for surface mounting.

Dimensions in mm.

handbook, halfpage

MGD521

IRSM

(%)

100

90

50

10

t1

t2

t

Fig.5

Non-repetitive peak reverse current pulse
definition.

In accordance with

"IEC 60060-1, Section 8".

t

1

= 10

�

s.

t

2

= 1000

�

s.

2001 Oct 10

5

Philips Semiconductors

Product specification

ZenBlock

TM

; zener with

integrated blocking diode

BZD142W

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

SOD87

100H03

99-03-31
99-06-04

Hermetically sealed glass surface mounted package;
Implotec

TM(1)

technology; 2 connectors

SOD87

UNIT

D

mm

2.1
2.0

2.0
1.8

3.7
3.3

0.3

D1

H

L

DIMENSIONS (mm are the original dimensions)

H

D

D1

L

L

(2)

0

1

2 mm

scale

Notes

1. Implotec is a trademark of Philips.

2. The marking indicates the cathode.

k

a

2001 Oct 10

6

Philips Semiconductors

Product specification

ZenBlock

TM

; zener with

integrated blocking diode

BZD142W

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS

(1)

PRODUCT

STATUS

(2)

DEFINITIONS

Objective data

Development

This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Preliminary data

Qualification

This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Product data

Production

This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification

The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition

Limiting values given are in

accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information

Applications that are

described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS

Life support applications

These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2001 Oct 10

7

Philips Semiconductors

Product specification

ZenBlock

TM

; zener with

integrated blocking diode

BZD142W

NOTES

� Koninklijke Philips Electronics N.V. 2001

SCA73

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Philips Semiconductors � a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands

613510/02/pp

8

Date of release:

2001 Oct 10

Document order number:

9397 750 08603

Document Outline

• FEATURES
• DESCRIPTION
• LIMITING VALUES
• ELECTRICAL CHARACTERISTICS ZENER/TVS
• ELECTRICAL CHARACTERISTICS BLOCKING DIODE
• THERMAL CHARACTERISTICS
• GRAPHICAL DATA
• PACKAGE OUTLINE
• DATA SHEET STATUS
• DEFINITIONS
• DISCLAIMERS