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Электронный компонент: BYX105G

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DATA SHEET
Product specification
Supersedes data of 1996 Oct 03
2000 Jan 13
DISCRETE SEMICONDUCTORS
BYX105G; BYX106G; BYX107G;
BYX108G
High-voltage soft-recovery
controlled avalanche rectifiers
M3D354
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2000 Jan 13
2
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifiers
BYX105G; BYX106G;
BYX107G; BYX108G
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
Recovery times ranging from 600 to 50 ns
Soft-recovery switching characteristics
Compact construction.
APPLICATIONS
High-voltage power supply units in, for example, X-ray
or radar systems.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
MARKING
TYPE NUMBER
CATHODE BAND
BYX105G
black
BYX106G
red
BYX107G
green
BYX108G
violet
handbook, halfpage
MSB026
a
k
Fig.1 Simplified outline (SOD88A) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
5
kV
V
RW
working reverse voltage
-
4.5
kV
I
F(AV)
average forward current
averaged over any 20 ms period;
T
oil
= 25
C
BYX105G
-
650
mA
BYX106G
-
575
mA
BYX107G
-
480
mA
BYX108G
-
340
mA
average forward current
averaged over any 20 ms period;
T
oil
= 70
C
BYX105G
-
460
mA
BYX106G
-
400
mA
BYX107G
-
340
mA
BYX108G
-
240
mA
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2000 Jan 13
3
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifiers
BYX105G; BYX106G;
BYX107G; BYX108G
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. For more information please refer to the
"General Part of associated Handbook".
I
FSM
non-repetitive peak forward current
t = 10 ms; half sinewave;
T
j
= 45
C prior to surge
BYX105G
-
20
A
BYX106G
-
15
A
BYX107G
-
14
A
BYX108G
-
14
A
P
RSM
non-repetitive peak reverse power
dissipation
t = 10
s; triangular pulse;
T
j
= T
j max
prior to surge
-
2
kW
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= 165
C
BYX105G
9.3
V
BYX106G
10.4
V
BYX107G
12
V
BYX108G
16.5
V
forward voltage
I
F
= 1 A
BYX105G
10.9
V
BYX106G
12.7
V
BYX107G
15.8
V
BYX108G
27.7
V
I
R
reverse current
V
R
= V
RWmax
15
A
V
R
= V
RWmax
; T
j
= 165
C
50
A
t
rr
reverse recovery time
when switched from I
F
= 50 mA to
I
R
= 100 mA; measured at I
R
= 25 mA
BYX105G
600
ns
BYX106G
350
ns
BYX107G
175
ns
BYX108G
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-oil
thermal resistance from junction to oil
note 1
20
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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2000 Jan 13
4
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifiers
BYX105G; BYX106G;
BYX107G; BYX108G
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD88A
97-06-20
Hermetically sealed glass package; axial leaded; 2 leads
SOD88A
UNIT
b
max.
mm
0.81
D
max.
G
max.
30.5
8
3.8
L
min.
DIMENSIONS (mm are the original dimensions)
G
L
D
L
b
0
2.5
5 mm
scale
Note
1. The marking band indicates the cathode.
(1)
k
a
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2000 Jan 13
5
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifiers
BYX105G; BYX106G;
BYX107G; BYX108G
NOTES
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2000 Jan 13
6
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifiers
BYX105G; BYX106G;
BYX107G; BYX108G
NOTES
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2000 Jan 13
7
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifiers
BYX105G; BYX106G;
BYX107G; BYX108G
NOTES
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Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
69
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Printed in The Netherlands
135002/03/pp
8
Date of release:
2000 Jan 13
Document order number:
9397 750 06493