Document Outline
- FEATURES
- SYMBOL
- QUICK REFERENCE DATA
- GENERAL DESCRIPTION
- PINNING
- SOT199
- LIMITING VALUES
- ISOLATION LIMITING VALUE & CHARACTERISTIC
- THERMAL RESISTANCES
- ELECTRICAL CHARACTERISTICS
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74F series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 300 V/ 400 V/ 500 V
Fast switching
Soft recovery characteristic
V
F
1.12 V
High thermal cycling performance
Isolated mounting tab
I
O(AV)
= 20 A
t
rr
60 ns
GENERAL DESCRIPTION
PINNING
SOT199
Dual, common cathode, ultra-fast,
PIN
DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high
1
anode 1
frequency switched mode power
supplies.
2
cathode
The BYV74F series is supplied in
3
anode 2
the conventional leaded SOT199
package.
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV74F
-300
-400
-500
V
RRM
Peak repetitive reverse voltage
-
300
400
500
V
V
RWM
Crest working reverse voltage
-
300
400
500
V
V
R
Continuous reverse voltage
T
mb
117C
-
300
400
500
V
I
O(AV)
Average rectified output current square wave;
= 0.5;
-
20
A
(both diodes conducting)
1
T
hs
54 C
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
30
A
per diode
T
hs
54 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current per diode.
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65 % ; clean and dustfree
-
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
k
a1
a2
1
3
2
1
2
3
case
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74F series
ultrafast
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
both diodes conducting
heatsink
with heatsink compound
-
-
4.0
K/W
without heatsink compound
-
-
8.0
K/W
per diode
with heatsink compound
-
-
5.0
K/W
without heatsink compound
-
-
9.0
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
35
-
K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 15 A; T
j
= 150C
-
0.95
1.12
V
I
F
= 15 A
-
1.08
1.25
V
I
F
= 30 A
-
1.15
1.36
V
I
R
Reverse current
V
R
= V
RRM
-
10
50
A
V
R
= V
RRM
; T
j
= 100 C
-
0.3
0.8
mA
Q
s
Reverse recovery charge
I
F
= 2 A to V
R
30 V;
-
40
60
nC
dI
F
/dt = 20 A/
s
t
rr
Reverse recovery time
I
F
= 1 A to V
R
30 V;
-
50
60
ns
dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 10 A to V
R
30 V;
-
4.2
5.2
A
dI
F
/dt = 50 A/
s; T
j
= 100C
V
fr
Forward recovery voltage
I
F
= 10 A; dI
F
/dt = 10 A/
s
-
2.5
-
V
September 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74F series
ultrafast
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum t
rr
at T
j
= 25C and 100C; per diode
Fig.6. Maximum I
rrm
at T
j
= 25C and 100C; per
diode.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
5
10
15
0
5
10
15
20
1.9
2.2
2.8
4
BYV44
IF(AV) / A
PF / W
a = 1.57
Rs = 0.0137
Vo = 0.89
Ths(max) / C
150
125
100
75
50
time
time
V F
V
fr
V F
I
F
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
1A
IF=20 A
Tj = 25 C
Tj = 100 C
0
5
10
15
20
25
0
5
10
15
20
25
30
D = 1.0
0.5
0.2
0.1
BYV44
Rs = 0.0137 Ohms
Vo = 0.8900 V
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Ths(max) / C
150
125
100
75
50
25
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF= 20 A
Tj = 25 C
Tj = 100 C
September 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74F series
ultrafast
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.8. Maximum Q
s
at T
j
= 25C; per diode
Fig.9. Transient thermal impedance per diode
Z
th j-hs
= f(t
p
)
0
0.5
1
1.5
2
0
10
20
30
40
50
BYV74
VF / V
IF / A
Tj = 25 C
Tj = 150 C
max
typ
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV42F/EX
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
1
10
100
1000
Qs / nC
1.0
10
100
-dIF/dt (A/us)
IF = 20 A
2 A
September 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74F series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
Fig.10. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
6.2
5.8
3.5
21.5
max
15.7
min
1
2
3
2.1 max
1.2
1.0
0.4
2.0
0.7 max
45
o
3.2
5.2 max
3.1
3.3
7.3
15.3 max
0.7
5.45
seating
plane
5.45
3.5 max
not tinned
M
September 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74F series
ultrafast
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
6
Rev 1.300
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