Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PINNING - SOT199
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- ISOLATION LIMITING VALUE & CHARACTERISTIC
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
Rectifier diodes
BYV72F series
ultrafast
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, high efficiency,
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
dual, rectifier diodes in a full pack,
plastic
envelope,
featuring
low
BYV72F-
100
150
200
forward
voltage
drop,
ultra-fast
V
RRM
Repetitive peak reverse
100
150
200
V
recovery times and soft recovery
voltage
characteristic. They are intended for
V
F
Forward voltage
0.90
0.90
0.90
V
use in switched mode power supplies
I
O(AV)
Output current (both
20
20
20
A
and high frequency circuits in general
diodes conducting)
where low conduction and switching
t
rr
Reverse recovery time
28
28
28
ns
losses are essential.
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
-150
-200
V
RRM
Repetitive peak reverse voltage
-
100
150
200
V
V
RWM
Crest working reverse voltage
-
100
150
200
V
V
R
Continuous reverse voltage
1
-
100
150
200
V
I
O(AV)
Output current (both diodes
square wave;
= 0.5;
-
20
A
conducting)
2
T
hs
78 C
sinusoidal; a = 1.57;
-
20
A
T
hs
78 C
I
O(RMS)
RMS forward current
-
20
A
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
30
A
per diode
T
hs
78 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current per diode
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RWM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
112
A
2
s
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1
2
3
case
k
a1
a2
1
3
2
1 T
hs
125C for thermal stability.
2 Neglecting switching and reverse current losses.
October 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72F series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
both diodes conducting
heatsink
with heatsink compound
-
-
4.0
K/W
without heatsink compound
-
-
8.0
K/W
per diode
with heatsink compound
-
-
5.0
K/W
without heatsink compound
-
-
9.0
K/W
R
th j-a
Thermal resistance junction to
in free air
-
35
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F
= 15 A; T
j
= 150C
-
0.83
0.90
V
I
F
= 15 A
-
0.95
1.05
V
I
F
= 30 A
-
1.00
1.20
V
I
R
Reverse current (per diode)
V
R
= V
RWM
; T
j
= 100 C
-
0.5
1
mA
V
R
= V
RWM
-
10
100
A
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge (per
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
6
15
nC
diode)
t
rr
Reverse recovery time (per
I
F
= 1 A; V
R
30 V;
-
20
28
ns
diode)
-dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 10 A; V
R
30 V;
-
2
2.4
A
(per diode)
-dI
F
/dt = 50 A/
s; T
j
= 100 C
V
fr
Forward recovery voltage (per
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
diode)
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72F series
ultrafast
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum t
rr
at T
j
= 25 C; per diode
Fig.6. Maximum t
rr
at T
j
= 100 C; per diode
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
5
10
15
0
5
10
15
20
1.9
2.2
2.8
4
BYV72
IF(AV) / A
PF / W
Ths(max) / C
150
125
100
75
50
a = 1.57
Vo = 0.705 V
Rs = 0.013 Ohms
time
time
V F
V
fr
V F
I
F
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=20A
0
5
10
15
20
25
0
5
10
15
20
25
D = 1.0
0.5
0.2
0.1
BYV72
Rs = 0.0130 Ohms
Vo = 0.7050 V
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Ths(max) / C
150
125
100
75
50
25
1
10
trr / ns
1
10
100
1000
100
-dIF/dt (A/us)
IF=1A
IF=20A
Tj = 100 C
October 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72F series
ultrafast
Fig.7. Maximum I
rrm
at T
j
= 25 C; per diode
Fig.8. Maximum I
rrm
at T
j
= 100 C; per diode
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=20A
100
10
1.0
1.0
10
100
-dIF/dt (A/us)
Qs / nC
IF=20A
10A
5A
2A
1A
10
1
0.1
0.01
IF / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=20A
Tj = 100 C
0.1
0.01
10 s
0.1
1 ms
10 us
tp / s
Zth (K/W)
10
1
t
p
t
D
P
0
VF / V
50
40
30
20
10
0
0.5
1.5
1.0
Tj = 150 C
Tj = 25 C
IF / A
max
typ
October 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72F series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
Fig.12. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
6.2
5.8
3.5
21.5
max
15.7
min
1
2
3
2.1 max
1.2
1.0
0.4
2.0
0.7 max
45
o
3.2
5.2 max
3.1
3.3
7.3
15.3 max
0.7
5.45
seating
plane
5.45
3.5 max
not tinned
M
October 1994
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV72F series
ultrafast
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1994
6
Rev 1.100
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