Document Outline
- FEATURES
- SYMBOL
- QUICK REFERENCE DATA
- GENERAL DESCRIPTION
- PINNING
- LIMITING VALUES
- ISOLATION LIMITING VALUE & CHARACTERISTIC
- THERMAL RESISTANCES
- ELECTRICAL CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
Philips Semiconductors
Product specification
Rectifier diodes
BYV133F, BYV133X series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R
= 35 V/ 40 V/ 45 V
Reverse surge capability
High thermal cycling performance
I
O(AV)
= 20 A
Isolated package
V
F
0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV133F series is supplied in the SOT186 package.
The BYV133X series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV133F-
35
40
45
BYV133X-
35
40
45
V
RRM
Peak repetitive reverse
-
35
40
45
V
voltage
V
RWM
Working peak reverse
-
35
40
45
V
voltage
V
R
Continuous reverse voltage
T
hs
99 C
-
35
40
45
V
I
O(AV)
Average rectified output
square wave;
= 0.5;
-
20
A
current (both diodes
T
hs
57 C
conducting)
I
FRM
Repetitive peak forward
square wave;
= 0.5;
-
20
A
current per diode
T
hs
57 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current per diode
t = 8.3 ms
-
110
A
sinusoidal; T
j
= 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
k
a1
a2
1
3
2
1 2 3
case
1 2 3
case
May 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV133F, BYV133X series
Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
isol
Peak isolation voltage from
SOT186 package; R.H.
65%; clean and
-
-
1500
V
all terminals to external
dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
-
-
2500
V
all terminals to external
sinusoidal waveform; R.H.
65%; clean
heatsink
and dustfree
C
isol
Capacitance from pin 2 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction
per diode
-
-
6
K/W
to heatsink
both diodes
-
-
5
K/W
(with heatsink compound)
R
th j-a
Thermal resistance junction
in free air
-
55
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage per diode
I
F
= 7 A; T
j
= 125C
-
0.5
0.6
V
I
F
= 20 A
-
0.84
0.94
V
I
R
Reverse current per diode
V
R
= V
RWM
-
0.1
0.8
mA
V
R
= V
RWM
; T
j
= 100C
-
10
15
mA
C
d
Junction capacitance per
V
R
= 5 V; f = 1 MHz, T
j
= 25C to 125C
-
210
-
pF
diode
May 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV133F, BYV133X series
Schottky barrier
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
0
5
10
15
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
BYV133
Rs = 0.026 Ohms
Vo = 0.418 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Ths(max) / C
150
T
I
D =
t
p
t
p
T
t
138
126
114
102
90
78
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
BYV133
Tj = 25 C
50 C
75 C
100 C
125 C
0
2
4
6
8
10
0
2
4
6
8
10
a = 1.57
1.9
2.2
2.8
4
BYV133
Rs = 0.026 Ohms
Vo = 0.418 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Ths(max) / C
150
138
126
114
102
90
1
10
100
10
1000
100
Cd / pF
VR / V
BYV133
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
BYV133
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
BYV133X
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
May 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV133F, BYV133X series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
2.54
5.08
0.9
0.7
1
2
3
M
0.4
top view
3.5 max
not tinned
4.4
May 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV133F, BYV133X series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
May 1998
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV133F, BYV133X series
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1998
6
Rev 1.100
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