Philips Semiconductors
Product specification
Rectifier diodes
BYQ30ED series
ultrafast, rugged
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high efficiency
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
rugged dual rectifier diodes in a
plastic envelope suitable for surface
BYQ30ED-
100
150
200
mounting,
featuring
low
forward
V
RRM
Repetitive peak reverse
100
150
200
V
voltage
drop,
ultra-fast
recovery
voltage
times
and
soft
recovery
V
F
Forward voltage
0.95
0.95
0.95
V
characteristic. These devices can
I
O(AV)
Output current (both
16
16
16
A
withstand reverse voltage transients
diodes conducting)
and have guaranteed reverse surge
t
rr
Reverse recovery time
25
25
25
ns
and
ESD
capability.
They
are
I
RRM
Repetitive peak reverse
0.2
0.2
0.2
A
intended for use in switched mode
current per diode
power supplies and high frequency
circuits
in
general
where
low
conduction and switching losses are
essential.
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
no connection
2
cathode
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
-150
-200
V
RRM
Repetitive peak reverse voltage
-
100
150
200
V
V
RWM
Crest working reverse voltage
-
100
150
200
V
V
R
Continuous reverse voltage
-
100
150
200
V
I
O(AV)
Output current (both diodes
square wave
-
16
A
conducting)
1
= 0.5; T
mb
104 C
I
O(RMS)
RMS forward current
-
23
A
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
16
A
per diode
T
mb
104 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current per diode
t = 8.3 ms
-
110
A
sinusoidal; with reapplied
V
RWM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
50
A
2
s
I
RRM
Repetitive peak reverse current t
p
= 2
s;
= 0.001
-
0.2
A
per diode
I
RSM
Non-repetitive peak reverse
t
p
= 100
s
-
0.2
A
current per diode
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1
2
3
tab
k
a
1
2
1 Neglecting switching and reverse current losses.
October 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
per diode
-
-
3.0
K/W
mounting base
both diodes conducting
-
-
2.5
K/W
R
th j-a
Thermal resistance junction to
minimum footprint, FR4 board
-
50
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F
= 8 A; T
j
= 150C
-
0.83
0.95
V
I
F
= 16 A; T
j
= 150C
-
1.0
1.15
V
I
F
= 16 A;
-
0.98
1.25
I
R
Reverse current (per diode)
V
R
= V
RWM
; T
j
= 100 C
-
0.3
0.6
mA
V
R
= V
RWM
-
2
30
A
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge (per
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
4
11
nC
diode)
t
rr
Reverse recovery time (per
I
F
= 1 A; V
R
30 V;
-
20
25
ns
diode)
-dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 1 A; V
R
30 V;
-
1.0
2
A
(per diode)
-dI
F
/dt = 50 A/
s; T
j
= 100 C
V
fr
Forward recovery voltage (per
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
diode)
October 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30ED series
ultrafast, rugged
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
)per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum t
rr
at T
j
= 25 C.
Fig.6. Maximum t
rr
at T
j
= 100 C.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYQ30
Rs 0.025 Ohms
Vo = 0.75 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
144
138
132
126
120
114
time
time
V F
V
fr
V F
I
F
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
0
2
4
6
8
10
12
0
2
4
6
8
10
12
0.5
0.2
0.1
BYQ30
Rs = 0.025 Ohms
Vo = 0.75 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
144
138
132
126
120
114
D = 1.0
D =
t
p
t
p
T
T
t
I
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=10A
IF=1A
October 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30ED series
ultrafast, rugged
Fig.7. Maximum I
rrm
at T
j
= 25 C.
Fig.8. Maximum I
rrm
at T
j
= 100 C.
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C.
Fig.11. Transient thermal impedance; Z
th j-mb
= f(t
p
).
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
10
1.0
1.0
10
100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
0.1
0.01
10 s
0.1 s
1 ms
10 us
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
10
1
P
t
p
t
D
0
0.5
1
1.5
2
0
5
10
15
20
BYQ30
Forward voltage, VF (V)
Forward current, IF (A)
typ
max
Tj = 25 C
Tj = 150 C
October 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30ED series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
Fig.12. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.13. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
0.3
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
0.5
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
tab
7.0
7.0
2.15
2.5
4.57
1.5
October 1997
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ30ED series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
6
Rev 1.000
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