Document Outline
- FEATURES
- SYMBOL
- QUICK REFERENCE DATA
- GENERAL DESCRIPTION
- PINNING
- LIMITING VALUES
- ESD LIMITING VALUE
- THERMAL RESISTANCES
- ELECTRICAL CHARACTERISTICS
- PACKAGE OUTLINE
- MOUNTING INSTRUCTIONS
- DEFINITIONS
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F
0.895 V
Reverse surge capability
High thermal cycling performance
I
O(AV)
= 10 A
Low thermal resistance
I
RRM
= 0.2 A
t
rr
25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
anode 1
2
cathode
1
3
anode 2
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYQ28E/ BYQ28EB/ BYQ28ED
-150
-200
V
RRM
Peak repetitive reverse
-
150
200
V
voltage
V
RWM
Working peak reverse
-
150
200
V
voltage
V
R
Continuous reverse voltage
-
150
200
V
I
O(AV)
Average rectified output
square wave;
= 0.5; T
mb
119 C
-
10
A
current (both diodes
conducting)
I
FRM
Repetitive peak forward
square wave;
= 0.5; T
mb
119 C
-
10
A
current per diode
I
FSM
Non-repetitive peak forward
t = 10 ms
-
50
A
current per diode
t = 8.3 ms
-
55
A
sinusoidal; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
t
p
= 2
s;
= 0.001
-
0.2
A
surge current per diode
I
RSM
Peak non-repetitive reverse
t
p
= 100
s
-
0.2
A
surge current per diode
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 40
150
C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
k
a1
a2
1
3
2
1
2
3
tab
1
3
tab
2
1 2 3
tab
October 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
-
4.5
K/W
to mounting base
both diodes
-
-
3
K/W
R
th j-a
Thermal resistance junction
SOT78 package, in free air
-
60
-
K/W
to ambient
SOT404 and SOT428 packages, pcb
-
50
-
K/W
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F
= 5 A; T
j
= 150C
-
0.8
0.895
V
I
F
= 5 A
-
0.95
1.1
V
I
F
= 10 A
-
1.1
1.25
V
I
R
Reverse current
V
R
= V
RWM
-
2
10
A
V
R
= V
RWM
; T
j
= 100C
-
0.1
0.2
mA
Q
rr
Reverse recovered charge
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
4
9
nC
t
rr1
Reverse recovery time
I
F
= 1 A; V
R
30 V; -dI
F
/dt = 100 A/
s
15
25
ns
t
rr2
Reverse recovery time
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
-
10
20
ns
I
rrm
Peak reverse recovery
I
F
= 5 A; V
R
30 V; -dI
F
/dt = 50 A/
s
-
0.5
0.7
A
current
V
fr
Forward recovery voltage
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Circuit schematic for t
rr2
Fig.5. Definition of t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
shunt
Current
to 'scope
D.U.T.
Voltage Pulse Source
R
time
time
V F
V
fr
V F
I
F
I = 1A
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
D = 1.0
0.5
0.2
0.1
BYQ28
IF(AV) / A
PF / W
Tmb(max) / C
150
145
140
135
130
125
120
115
110
D =
t
p
t
p
T
T
t
I
Vo = 0.748 V
Rs = 0.0293 Ohms
0
1
2
3
4
5
6
0
1
2
3
4
5
6
a = 1.57
1.9
2.2
2.8
4
BYQ28
IF(AV) / A
PF / W
Tmb(max) / C
150
145
140
135
130
125
120
Vo = 0.748 V
Rs = 0.0293 Ohms
October 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 C; per diode
Fig.8. Maximum I
rrm
at T
j
= 25 C; per diode
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=5A
0.1
1.0
10
100
Qs / nC
1.0
10
100
-dIF/dt (A/us)
IF=5A
IF=2A
IF=1A
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=5A
IF=1A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYQ28E
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0
1
15
10
5
0
0.5
VF / V
1.5
IF / A
typ
max
Tj=150C
Tj=25C
BYQ28
October 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
October 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
October 1998
6
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
Fig.15. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.16. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
0.3
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
0.5
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
tab
7.0
7.0
2.15
2.5
4.57
1.5
October 1998
7
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
8
Rev 1.300
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