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DATA SHEET
Product specification
Supersedes data of 1996 May 30
1996 Sep 18
DISCRETE SEMICONDUCTORS
BYM36 series
Fast soft-recovery
controlled avalanche rectifiers
handbook, 2 columns
M3D118
1996 Sep 18
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
k
a
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYM36A
-
200
V
BYM36B
-
400
V
BYM36C
-
600
V
BYM36D
-
800
V
BYM36E
-
1000
V
BYM36F
-
1200
V
BYM36G
-
1400
V
V
R
continuous reverse voltage
BYM36A
-
200
V
BYM36B
-
400
V
BYM36C
-
600
V
BYM36D
-
800
V
BYM36E
-
1000
V
BYM36F
-
1200
V
BYM36G
-
1400
V
I
F(AV)
average forward current
T
tp
= 55
C; lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYM36A to C
-
3.0
A
BYM36D and E
-
2.9
A
BYM36F and G
-
2.9
A
I
F(AV)
average forward current
T
amb
= 65
C; PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYM36A to C
-
1.25
A
BYM36D and E
-
1.20
A
BYM36F and G
-
1.15
A
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
tp
= 55
C; see Figs 8; 9 and 10
BYM36A to C
-
37
A
BYM36D and E
-
33
A
BYM36F and G
-
27
A
I
FRM
repetitive peak forward current
T
amb
= 65
C; see Figs 11; 12 and 13
BYM36A to C
-
13
A
BYM36D and E
-
11
A
BYM36F and G
-
10
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
-
65
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
-
10
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Figs 17 and 18
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 3 A; T
j
= T
j max
;
see Figs 19; 20 and 21
BYM36A to C
-
-
1.22
V
BYM36D and E
-
-
1.28
V
BYM36F and G
-
-
1.24
V
V
F
forward voltage
I
F
= 3 A;
see Figs 19; 20 and 21
BYM36A to C
-
-
1.60
V
BYM36D and E
-
-
1.78
V
BYM36F and G
-
-
1.57
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYM36A
300
-
-
V
BYM36B
500
-
-
V
BYM36C
700
-
-
V
BYM36D
900
-
-
V
BYM36E
1100
-
-
V
BYM36F
1300
-
-
V
BYM36G
1500
-
-
V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.22
-
-
5
A
V
R
= V
RRMmax
;
T
j
= 165
C; see Fig.22
-
-
150
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.25.
For more information please refer to the
"General Part of associated Handbook".
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig. 26
BYM36A to C
-
-
100
ns
BYM36D and E
-
-
150
ns
BYM36F and G
-
-
250
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Figs 23 and 24
BYM36A to C
-
85
-
pF
BYM36D and E
-
75
-
pF
BYM36F and G
-
65
-
pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
30 V and
dI
F
/dt =
-
1 A/
s;
see Fig.27
BYM36A to C
-
-
7
A/
s
BYM36D and E
-
-
6
A/
s
BYM36F and G
-
-
5
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
75
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
1996 Sep 18
5
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
GRAPHICAL DATA
BYM36A to C
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
0
200
0
MSA884
100
T ( C)
o
I F(AV)
(A)
3
1
2
lead length (mm)
20 15
10
tp
BYM36D and E
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.3
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
0
200
0
MSA885
100
I F(AV)
(A)
3
1
2
lead length (mm)
20
15
10
T ( C)
o
tp
BYM36F and G
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.4
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
0
200
4.0
0
0.8
3.2
MBD418
100
I F(AV)
(A)
T ( C)
o
tp
1.6
2.4
lead length 10 mm
BYM36A to C
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.5
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
0
200
2.0
0
0.4
1.6
MLB492
100
I F(AV)
(A)
T ( C)
o
amb
0.8
1.2
1996 Sep 18
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
BYM36D and E
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.6
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
0
200
2.0
0
0.4
1.6
MLB493
100
I F(AV)
(A)
T ( C)
o
amb
0.8
1.2
BYM36F and G
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.7
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
0
200
2.0
0
0.4
1.6
MBD417
100
I F(AV)
(A)
T ( C)
o
amb
0.8
1.2
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36A to C
T
tp
= 55
C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 600 V.
0
20
10
2
10
1
1
10
10
2
10
3
10
4
MSA890
40
10
30
t (ms)
p
I FRM
(A)
= 0.05
0.1
0.2
0.5
1
1996 Sep 18
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
BYM36D and E
T
tp
= 55
C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
0
20
10
2
10
1
1
10
10
2
10
3
10
4
MSA889
40
10
30
t (ms)
p
I FRM
(A)
= 0.05
0.1
0.2
0.5
1
BYM36F and G
T
tp
= 55
C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1400 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
30
0
10
10
2
1
10
10
2
10
3
10
4
MBD450
20
t (ms)
p
10
1
I FRM
(A)
5
15
25
= 0.05
0.1
0.2
0.5
1
1996 Sep 18
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36A to C
T
amb
= 65
C; R
th j-a
= 75 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 600 V.
0
8
10
2
10
1
1
10
10
2
10
3
10
4
MSA887
16
4
12
t (ms)
p
I FRM
(A)
= 0.05
0.1
0.2
0.5
1
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36D and E
T
amb
= 65
C; R
th j-a
= 75 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1000 V.
0
10
2
10
1
1
10
10
2
10
3
10
4
MSA888
t (ms)
p
I FRM
(A)
12
4
8
2
6
10
1
= 0.05
0.1
0.2
0.5
1996 Sep 18
9
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYM36F and G
T
amb
= 65
C; R
th j-a
= 75 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1400 V.
12
0
4
10
2
1
10
10
2
10
3
10
4
MBD445
8
t (ms)
p
10
1
I FRM
(A)
2
6
10
= 0.05
0.1
0.2
0.5
1
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
BYM36A to C
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
5
0
1
3
0
MSA882
2
1
2
3
4
I F(AV) (A)
P
(W)
a = 3
2.5
2
1.42
1.57
BYM36D and E
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
handbook, halfpage
5
0
1
3
0
MSA883
2
1
2
3
4
I F(AV) (A)
P
(W)
a = 3
2.5
2
1.42
1.57
1996 Sep 18
10
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
BYM36F and G
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
handbook, halfpage
5
0
1
3
0
MLB560
2
1
2
3
4
I F(AV) (A)
P
(W)
a = 3
2.5
2
1.42
1.57
Fig.17 Maximum permissible junction temperature
as a function of reverse voltage.
BYM36A to E
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
handbook, halfpage
200
0
400
1200
0
MSA873
800
100
V (V)
R
A
B
C
D
E
Tj
(
C)
Fig.18 Maximum permissible junction temperature
as a function of reverse voltage.
BYM36F and G
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
handbook, halfpage
200
0
2000
0
MLB601
1000
100
V (V)
R
T j
( C)
o
F
G
Fig.19 Forward current as a function of forward
voltage; maximum values.
BYM36A to C
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
handbook, halfpage
0
12
IF
8
(A)
4
0
1
2
VF (V)
3
MSA880
1996 Sep 18
11
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
Fig.20 Forward current as a function of forward
voltage; maximum values.
BYM36D and E.
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
handbook, halfpage
0
12
8
4
0
1
2
4
MSA881
3
IF
(A)
VF (V)
Fig.21 Forward current as a function of forward
voltage; maximum values.
BYM36F and G.
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
handbook, halfpage
0
12
8
4
0
1
2
3
MBD425
IF
(A)
VF (V)
Fig.22 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
MGC550
0
100
200
10
3
10
2
10
1
(
A)
IR
Tj (
C)
V
R
= V
RRMmax
.
BYM36A to E
f = 1 MHz; T
j
= 25
C.
Fig.23 Diode capacitance as a function of reverse
voltage, typical values.
1
MSA886
10
10
2
10
3
1
10
2
10
V (V)
R
Cd
(pF)
BYM36A,B,C
BYM36D,E
1996 Sep 18
12
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
BYM36F and G
f = 1 MHz; T
j
= 25
C.
Fig.24 Diode capacitance as a function of reverse
voltage, typical values.
1
MBD438
10
10
2
10
4
1
10
2
10
V (V)
R
C d
(pF)
10
3
Fig.25 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1
IF
(A)
IR
(A)
t
0.25
Fig.26 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
< 7 ns.
Source impedance: 50
; t
r
15 ns.
1996 Sep 18
13
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
Fig.27 Reverse recovery definitions.
andbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1996 Sep 18
14
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.28 SOD64.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
MBC049
,
,
4.5
max
k
a
28 min
28 min
5.0 max
1.35
max
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