Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
1996 May 06
DISCRETE SEMICONDUCTORS
BYG90-40 series
Schottky barrier rectifier diodes
handbook, halfpage
M3D113
1996 May 06
2
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
FEATURES
Low switching losses
Capability of absorbing very high
surge current
Fast recovery time
Guard ring protected
Plastic SMD package.
APPLICATIONS
Low power switched-mode power
supplies
Rectifying
Polarity protection.
DESCRIPTION
The BYG 90-40 series consists of
Schottky barrier rectifier diodes,
fabricated in planar technology, and
encapsulated in rectangular
SOD106A plastic SMD packages.
Fig.1 Simplified outline (SOD106A), pin configuration and symbol.
handbook, 4 columns
MAM129 - 1
Top view
k
a
cathode identifier
k
a
1996 May 06
3
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
BYG90-20
-
20
V
BYG90-30
-
30
V
BYG90-40
-
40
V
V
RRM
repetitive peak reverse voltage
BYG90-20
-
20
V
BYG90-30
-
30
V
BYG90-40
-
40
V
V
RWM
crest working reverse voltage
BYG90-20
-
20
V
BYG90-30
-
30
V
BYG90-40
-
40
V
I
F(AV)
average forward current
T
amb
= 65
C; see Fig.2;
R
th j-a
= 80 K/W; note 1;
V
R(equiv)
= 0.2 V; note 2
-
1
A
I
FSM
non-repetitive peak forward current
t = 8.3
s half sine wave;
JEDEC method
-
30
A
I
RSM
non-repetitive peak reverse current
t
p
= 100
s
-
0.5
A
T
stg
storage temperature
-
65
+125
C
T
j
junction temperature
-
125
C
1996 May 06
4
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C; unless otherwise specified.
Note
1. Pulsed test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD106A standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.2; note 1
I
F
= 1 A
-
-
550
mV
I
F
= 3 A
-
-
850
mV
I
F
= 1 A; T
j
= 100
C
-
-
450
mV
I
R
reverse current
V
R
= V
RRMmax
; note 1; see Fig.3
-
-
1
mA
V
R
= V
RRMmax
; T
j
= 100
C; note 1;
see Fig.3
-
-
10
mA
C
d
diode capacitance
V
R
= 4 V; f = 1 MHz; see Fig.4
-
-
75
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
80
K/W
1996 May 06
5
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
GRAPHICAL DATA
(1) T
amb
= 125
C.
(2) T
amb
= 100
C.
(3) T
amb
= 75
C.
(4) T
amb
= 25
C.
Fig.2
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
4
10
2
10
3
10
1
0
MLC388
0.6
0.8
0.4
0.2
1.0
V (V)
I F
(mA)
F
(4)
(1)
(2)
(3)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 100
C.
(3) T
amb
= 75
C.
(4) T
amb
= 25
C.
handbook, halfpage
10
4
10
2
10
3
10
1
0
MLC389
30
20
10
40
(4)
(1)
(2)
(3)
V (V)
I R
(
A)
R
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz.
handbook, halfpage
10
3
10
2
10
0
MLC390
16
24
32
8
40
V (V)
R
C d
(pF)
1996 May 06
6
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
PACKAGE OUTLINE
Dimensions in mm.
The marking bar indicates the cathode.
Fig.5 SOD106A.
handbook, full pagewidth
MSA356 - 1
4.57
max
1.5
1.2
0.2
cathode
identifier
5.5
5.1
2.65
max
0.1
2.5 1.5
1996 May 06
7
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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