1996 Sep 26
2
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Soft-recovery switching
characteristics
Very compact construction.
APPLICATIONS
Miniature high-voltage assemblies
such as voltage multipliers.
DESCRIPTION
Miniature glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
Fig.1 Simplified outline (SOD61H2) and symbol.
The cathode lead is marked with a black band.
handbook, halfpage
MAM162
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
non-repetitive peak reverse voltage
-
2200
V
V
RRM
repetitive peak reverse voltage
-
2200
V
V
RW
working reverse voltage
-
2000
V
V
R
continuous reverse voltage
-
2000
V
I
F(AV)
average forward current
averaged over any 20 ms period;
PCB mounting (see Fig.5);
T
amb
= 65
C; see Fig.2;
see also Fig.3
-
50
mA
I
FRM
repetitive peak forward current
-
500
mA
I
FSM
non-repetitive peak forward current
t
10 ms; half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RWmax
-
1
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
1996 Sep 26
3
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
m, see Fig.5.
For more information please refer to the
"General Part of associated Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 50 mA; T
j
= T
j max
; see Fig.4
-
-
6
V
I
R
reverse current
V
R
= V
RWmax
; T
j
= 120
C
-
-
3
A
Q
r
recovery charge
when switched from I
F
= 100 mA to
V
R
100 V and dI
F
/dt =
-
200 mA/
s;
see Fig.6
-
-
1
nC
t
f
fall time
when switched from I
F
= 100 mA to
V
R
100 V and dI
F
/dt =
-
200 mA/
s;
see Fig.6
100
-
-
ns
t
rr
reverse recovery time
when switched from I
F
= 100 mA to
V
R
100 V and dI
F
/dt =
-
200 mA/
s;
see Fig.6
-
-
300
ns
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz
-
2
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
100
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
155
K/W
1996 Sep 26
4
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
a = 1.57;
= 0.5; V
R
= V
RWmax
; device mounted as shown in Fig.5.
handbook, halfpage
0
160
0
MBH389
40
20
80
60
80
120
40
Tamb (
C)
IF(AV)
(mA)
Fig.3
Maximum steady state power dissipation
(forward plus leakage losses) as a function
of average forward current.
a = I
F(RMS)
/I
F(AV)
;
= 0.5; V
R
= V
RWmax
.
handbook, halfpage
0
100
0
MBH390
500
1000
50
IF(AV) (mA)
P
(mW)
2.5
a = 3
1.57 1.42
2
Fig.4
Forward current as a function of maximum
forward voltage.
Dotted line: T
j
= 150
C.
Solid line: T
j
= 25
C.
handbook, halfpage
0
10
20
0
MBH402
100
200
VF (V)
IF
(mA)
Fig.5 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
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