Philips Semiconductors
Preliminary specification
Damper diode
BY359F-1500, BY359F-1500S
fast, high-voltage
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 1500 V
Fast switching
Soft recovery characteristic
V
F
1.8 V / 2 V
High thermal cycling performance
Isolated mounting tab
I
F(RMS)
= 15.7 A
I
FSM
60 A
t
rr
600 ns / 350 ns
GENERAL DESCRIPTION
PINNING
SOD100
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier diode featuring low forward
voltage drop, fast reverse recovery
1
cathode
and soft recovery characteristic.
The device is intended for use in TV
2
anode
receivers and PC monitors.
tab
isolated
The BY359F series is supplied in
the conventional leaded SOD100
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
Peak non-repetitive reverse
-
1500
V
voltage
V
RRM
Peak repetitive reverse voltage
-
1500
V
V
RWM
Crest working reverse voltage
-
1300
V
I
F(peak)
Peak forward current
16-32kHz TV
BY359F-1500
-
10
A
31-70kHz monitor
BY359F-1500S
-
7
A
I
F(RMS)
RMS forward current
-
15.7
A
I
FRM
Peak repetitive forward current
sinusoidal; a = 1.57
-
60
A
I
FSM
Peak non-repetitive forward
t = 10 ms
-
60
A
current
t = 8.3 ms
-
66
A
sinusoidal; T
j
= 150 C prior to surge;
with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
k
a
1
2
1
2
case
September 1998
1
Rev 1.300
Philips Semiconductors
Preliminary specification
Damper diode
BY359F-1500, BY359F-1500S
fast, high-voltage
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
BY359F-1500
BY359F-1500S
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 20 A
1.3
1.8
1.5
2.0
V
I
F
= 10 A; T
j
= 150C
1.00
1.5
1.25
1.75
V
I
R
Reverse current
V
R
= 1300 V
10
100
10
100
A
V
R
= 1300 V;
50
300
100
600
A
T
j
= 100 C
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
BY359F-1500
BY359F-1500S
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
TYP.
MAX.
UNIT
t
rr
Reverse recovery time
I
F
= 2 A; V
R
30 V;
0.47
0.60
0.28
0.35
s
Q
s
Reverse recovery charge
-dI
F
/dt = 20 A/
s
1.6
2.0
0.70
0.95
C
V
fr
Peak forward recovery voltage
I
F
= 10 A;
11.0
-
17.0
-
V
dI
F
/dt = 30 A/
s
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
100%
time
dI
dt
F
I
R
I
F
I
rrm
trr
25%
Qs
time
time
V F
V
fr
V F
I
F
September 1998
2
Rev 1.300
Philips Semiconductors
Preliminary specification
Damper diode
BY359F-1500, BY359F-1500S
fast, high-voltage
Fig.3. Maximum non-repetitive rms forward current.
I
F
= f(t
p
); sinusoidal current waveform; T
j
= 150C prior
to surge with reapplied V
RWM
.
Fig.4. Transient thermal impedance Z
th
= f(t
p
)
Fig.5. BY359F-1500 forward characteristic I
F
= f(V
F
);
parameter T
j
Fig.6. BY359F-1500S forward characteristic
I
F
= f(V
F
); parameter T
j
1ms
10ms
0.1s
1s
10s
tp / s
IFS(RMS) / A
BY359
80
70
60
50
40
30
20
10
0
IFSM
0
30
20
10
0
1.0
2.0
IF / A
VF / V
max
typ
Tj=150C
Tj=25C
BY359
0
30
20
10
0
1.0
2.0
IF / A
VF / V
max
typ
Tj=150C
Tj=25C
BY359S
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BY359F
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
September 1998
3
Rev 1.300
Philips Semiconductors
Preliminary specification
Damper diode
BY359F-1500, BY359F-1500S
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.7. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
5.08
0.9
0.7
M
0.4
top view
3.5 max
not tinned
4.4
k
a
September 1998
4
Rev 1.300
Philips Semiconductors
Preliminary specification
Damper diode
BY359F-1500, BY359F-1500S
fast, high-voltage
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
5
Rev 1.300
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