Philips Semiconductors
Product specification
Damper diode
BY329X-1700S
fast, high-voltage
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 1700 V
Fast switching
Soft recovery characteristic
V
F
1.5 V
High thermal cycling performance
Isolated mounting tab
I
F(PEAK)
= 6 A
I
FSM
60 A
t
rr
170 ns
GENERAL DESCRIPTION
PINNING
SOD113
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier diode featuring low forward
voltage drop, fast reverse recovery
1
cathode
and soft recovery characteristic.
The device is intended for use in TV
2
anode
receivers and PC monitors.
tab
isolated
The BY329X series is supplied in
the conventional leaded SOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
Peak non repetitive reverse
-
1700
V
voltage
V
RRM
Peak repetitive reverse voltage
-
1700
V
V
RWM
Crest working reverse voltage
-
1300
V
I
F(peak)
Peak working forward current
f = 16 kHz
-
6
A
f = 64 kHz
-
6
A
I
FRM
Peak repetitive forward current
t = 25
s;
= 0.5; T
hs
91 C
-
14
A
I
F(RMS)
RMS forward current
-
10
A
I
FSM
Peak non-repetitive forward
t = 10 ms
-
60
A
current
sinusoidal; T
j
= 150 C prior to
surge; with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
k
a
1
2
1
2
case
September 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
BY329X-1700S
fast, high-voltage
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 6.5 A
-
1.35
1.65
V
I
F
= 6.5 A; T
j
= 125 C
-
1.2
1.5
V
I
R
Reverse current
V
R
= V
RWMmax
-
-
250
A
V
R
= V
RWMmax
; T
j
= 125 C
-
-
1.0
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
fr
Forward recovery voltage
I
F
= 6.5 ; dI
F
/dt = 50 A/
s
-
30
40
V
t
fr
Forward recovery time
I
F
= 6.5 A; dI
F
/dt = 50 A/
s; V
F
= 5 V
-
300
320
ns
t
rr
Reverse recovery time
I
F
= 1 A; -dI
F
/dt = 50 A/
s; V
R
30 V
-
130
170
ns
Q
s
Reverse recovery charge
I
F
= 2 A; -dI
F
/dt = 20 A/
s; V
R
30 V
-
0.7
1.0
C
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of t
rr
and Q
s
time
time
V F
V
fr
V F
I
F
10%
5V
tfr
100%
time
dI
dt
F
I
R
I
F
trr
25%
Qs
September 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
BY329X-1700S
fast, high-voltage
Fig.3. Basic horizontal deflection circuit.
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
Fig.5. BY329-1500S Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance Z
th
= f(t
p
)
Line output transformer
VCC
D1
LY
Cs
Cf
deflection transistor
0
0.5
1
1.5
2
0
10
20
30
VF / V
IF / A
BY329S17
Tj = 125 C
Tj = 25 C
typ
max
10
100
1
10
100
BY459X-1500
line frequency / kHz
Maximum pulse width / us
V
time
VRRM
width tp
period T
pulse
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BY229F
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
September 1998
3
Rev 1.200
PDF 
ZIP