Document Outline
- DESCRIPTION
- APPLICATIONS
- PINNING
- QUICK REFERENCE DATA
- THERMAL CHARACTERISTICS
- LIMITING VALUES
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
File under Discrete Semiconductors, SC06
1997 Aug 13
DISCRETE SEMICONDUCTORS
BUW13W; BUW13AW
Silicon diffused power transistors
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT429 package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
Fig.1 Simplified outline (SOT429) and symbol.
ge
MBK117
1
2
3
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUW13W
850
V
BUW13AW
1000
V
V
CEO
collector-emitter voltage
open base
BUW13W
400
V
BUW13AW
450
V
V
CEsat
collector-emitter saturation voltage
see Figs 7 and 9
1.5
V
I
C
collector current (DC)
see Figs 2 and 4
15
A
I
CM
collector current (peak value)
see Fig 2
30
A
P
tot
total power dissipation
T
mb
25
C; see Fig.3
175
W
t
f
fall time
resistive load; see Figs 11 and 12
0.8
s
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
0.7
K/W
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUW13W
-
850
V
BUW13AW
-
1000
V
V
CEO
collector-emitter voltage
open base
BUW13W
-
400
V
BUW13AW
-
450
V
I
C
collector current (DC)
see Figs 2 and 4
-
15
A
I
CM
collector current (peak value)
t
p
< 2 ms; see Fig 2
-
30
A
I
B
base current (DC)
-
6
A
I
BM
base current (peak value)
t
p
< 2 ms
-
9
A
P
tot
total power dissipation
T
mb
25
C; see Fig.3
-
175
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 5 and 6
BUW13W
400
-
-
V
BUW13AW
450
-
-
V
V
CEsat
collector-emitter saturation voltage
BUW13W
I
C
= 10 A; I
B
= 2 A; see
Figs 7 and 9
-
-
1.5
V
BUW13AW
I
C
= 8 A; I
B
= 1.6 A; see
Figs 7 and 9
-
-
1.5
V
V
BEsat
base-emitter saturation voltage
BUW13W
I
C
= 10 A; I
B
= 2 A; see Fig.7
-
-
1.6
V
BUW13AW
I
C
= 8 A; I
B
= 1.6 A; see Fig.7
-
-
1.6
V
I
CES
collector-emitter cut-off current
V
CE
= V
CESMmax
; V
BE
= 0; note 1
-
-
1
mA
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
C; note 1
-
-
4
mA
I
EBO
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0
-
-
10
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 20 mA;
see Fig.10
10
18
35
V
CE
= 5 V; I
C
= 1.5 A;
see Fig.10
10
20
35
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
Note
1. Measured with a half-sinewave voltage (curve tracer).
Switching times resistive load (see Figs 11 and 12)
t
on
turn-on time
BUW13W
I
Con
= 10 A; I
Bon
=
-
I
Boff
= 2 A
-
-
1
s
BUW13AW
I
Con
= 8 A; I
Bon
=
-
I
Boff
= 1.6 A
-
-
1
s
t
s
storage time
BUW13W
I
Con
= 10 A; I
Bon
=
-
I
Boff
= 2 A
-
-
4
s
BUW13AW
I
Con
= 8 A; I
Bon
=
-
I
Boff
= 1.6 A
-
-
4
s
t
f
fall time
BUW13W
I
Con
= 10 A; I
Bon
=
-
I
Boff
= 2 A
-
-
0.8
s
BUW13AW
I
Con
= 8 A; I
Bon
=
-
I
Boff
= 1.6 A
-
-
0.8
s
Switching times inductive load (see Figs 13 and 14)
t
s
storage time
BUW13W
I
Con
= 10 A; I
B
= 2 A
-
2.3
3
s
I
Con
= 10 A; I
B
= 2 A; T
j
= 100
C
-
2.5
3.2
s
BUW13AW
I
Con
= 8 A; I
B
= 1.6 A
-
2.3
3
s
I
Con
= 8 A; I
B
= 1.6 A;
T
j
= 100
C
-
2.5
3.2
s
t
f
fall time
BUW13W
I
Con
= 10 A; I
B
= 2 A
-
80
150
ns
I
Con
= 10 A; I
B
= 2 A; T
j
= 100
C
-
140
300
ns
BUW13AW
I
Con
= 8 A; I
B
= 1.6 A
-
80
150
ns
I
Con
= 8 A; I
B
= 1.6 A;
T
j
= 100
C
-
140
300
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
Fig.2 Forward bias SOAR.
T
mb
25
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
BE
100
and t
p
0.6
s.
IV - Repetitive pulse operation in this region is permissible provided V
BE
0 and t
p
5 ms.
(1) P
tot max
line.
(2) Second breakdown limits.
handbook, full pagewidth
MGB926
1
10
1
10
2
10
3
10
4
I
VCE (V)
10
10
-
1
10
3
10
2
10
-
2
10
-
3
IC
(A)
ICM max
IC max
BUW13W
BUW13AW
II
III
IV
(1)
(2)
DC
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