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Электронный компонент: BUT18F

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DATA SHEET
Product specification
Supersedes data of 1997 Aug 13
1999 Jun 11
DISCRETE SEMICONDUCTORS
BUT18F; BUT18AF
Silicon diffused power transistors
1999 Jun 11
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
mb
mounting base; electrically isolated from all pins
andbook, halfpage
MBK109
1 2 3
Fig.1 Simplified outline (SOT186) and symbol.
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
Notes
1. Mounted without heatsink compound and 30
5 N force on centre of package.
2. Mounted with heatsink compound and 30
5 N force on centre of package.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUT18F
850
V
BUT18AF
1000
V
V
CEO
collector-emitter voltage
open base
BUT18F
400
V
BUT18AF
450
V
V
CEsat
collector-emitter saturation voltage
see Fig.7
1.5
V
I
Csat
collector saturation current
4
A
I
C
collector current (DC)
see Fig.4
6
A
I
CM
collector current (peak value)
see Fig.4
12
A
P
tot
total power dissipation
T
h
25
C; see Fig.2
33
W
t
f
fall time
resistive load; see Figs 10 and 11
0.8
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1
6.15
K/W
note 2
3.65
K/W
1999 Jun 11
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Without heatsink compound.
2. With heatsink compound.
ISOLATION CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUT18F
-
850
V
BUT18AF
-
1000
V
V
CEO
collector-emitter voltage
open base
BUT18F
-
400
V
BUT18AF
-
450
V
I
Csat
collector saturation current
-
4
A
I
C
collector current (DC)
see Fig.4
-
6
A
I
CM
collector current (peak value)
see Fig.4
-
12
A
I
B
base current (DC)
-
3
A
I
BM
base current (peak value)
-
6
A
P
tot
total power dissipation
T
h
25
C; see Fig.2; note 1
-
20
W
T
h
25
C; see Fig.2; note 2
-
33
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
isolM
isolation voltage from all terminals to external heatsink (peak value)
-
1500
V
C
isol
isolation capacitance from collector to external heatsink
12
-
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage
I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 3 and 6
BUT18F
400
-
-
V
BUT18AF
450
-
-
V
V
CEsat
collector-emitter saturation voltage
I
C
= 4 A; I
B
= 800 mA; see Fig.7
-
-
1.5
V
V
BEsat
base-emitter saturation voltage
I
C
= 4 A; I
B
= 800 mA; see Fig.8
-
-
1.3
V
I
CES
collector-emitter cut-off current
V
CE
= V
CESMmax
; V
BE
= 0;
note 1
-
-
1
mA
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
C; note 1
-
-
2
mA
I
EBO
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0
-
-
10
mA
1999 Jun 11
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
Note
1. Measured with a half-sinewave voltage (curve tracer).
h
FE
DC current gain
V
CE
= 5 V; I
C
= 10 mA;
see Fig.9
10
18
35
V
CE
= 5 V; I
C
= 1 A; see Fig.9
10
20
35
Switching times resistive load (see Figs 10 and 11)
t
on
turn-on time
I
Con
= 4 A;
I
Bon
=
-
I
Boff
= 800 mA
-
-
1
s
t
s
storage time
I
Con
= 4 A;
I
Bon
=
-
I
Boff
= 800 mA
-
-
4
s
t
f
fall time
I
Con
= 4 A;
I
Bon
=
-
I
Boff
= 800 mA
-
-
0.8
s
Switching times inductive load (see Figs 10 and 13)
t
s
storage time
I
Con
= 4 A; I
Bon
= 800 mA
-
1.6
2.5
s
t
f
fall time
I
Con
= 4 A; I
Bon
= 800 mA
-
150
400
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Fig.2 Power derating curve.
handbook, halfpage
0
50
Th (
o
C)
100
150
120
0
40
80
MGK674
Ptot max
(%)
Fig.3
Test circuit for collector-emitter
sustaining voltage.
handbook, halfpage
MGE252
+
50 V
100 to 200
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1
300
1999 Jun 11
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
Fig.4 Forward bias SOAR.
Mounted without heatsink compound and 30
5 N force on centre of package.
T
mb
< 25
C
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
handbook, full pagewidth
MGB922
1
10
1
10
2
10
3
10
4
II
I
VCE (V)
10
10
-
1
10
2
10
-
2
10
-
4
10
-
3
IC
(A)
DC
ICM max
IC max
BUT18F
BUT18AF