Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- MECHANICAL DATA
- MOUNTING INSTRUCTIONS
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
Thyristor
BTH151S-650R
High Repetitive Surge
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated thyristor in a plastic envelope,
SYMBOL
PARAMETER
MAX.
UNIT
suitable for surface mounting, intended for
use
in
applications
requiring
high
V
DRM
, V
RRM
Repetitive peak off-state
bidirectional blocking voltage capability and
voltages
650
V
high thermal cycling performance. This
I
T(AV)
Average on-state current
7.5
A
thyristor has
a
high repetitive surge
I
T(RMS)
RMS on-state current
12
A
specification which makes it suitable for
I
TSM
Non-repetitive peak on-state current
110
A
applications where high inrush currents or
I
TRM
Repetitive peak on-state current
60
A
stall currents are likely to occur on a
repetitive basis.
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DRM
,
Repetitive peak off-state
V
RRM
voltages
half sine wave;
-
1
650
V
I
T(AV)
Average on-state current
T
mb
103 C
-
7.5
A
I
T(RMS)
RMS on-state current
all conduction angles
-
12
A
I
TSM
Non-repetitive peak
half sine wave; T
j
= 25 C prior to
on-state current
surge
t = 10 ms
-
110
A
t = 8.3 ms
-
121
A
I
TRM
Repetitive peak on-state
t = 10ms,
= 3s, T
mb
45C, no.
-
60
A
current
of surges = 100k
I
2
t
I
2
t for fusing
t = 10 ms
-
61
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 20 A; I
G
= 50 mA;
-
50
A/
s
on-state current after
dI
G
/dt = 50 mA/
s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
1
2
3
tab
a
k
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
March 2001
1
Rev 1.001
Philips Semiconductors
Product specification
Thyristor
BTH151S-650R
High Repetitive Surge
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
-
-
1.8
K/W
junction to mounting base
R
th j-a
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
-
2
15
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
-
10
40
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
7
20
mA
V
T
On-state voltage
I
T
= 23 A
-
1.4
1.75
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.6
1.5
V
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 C
0.25
0.4
-
V
I
D
, I
R
Off-state leakage current
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
; T
j
= 125 C;
off-state voltage
exponential waveform;
Gate open circuit
50
130
-
V/
s
R
GK
= 100
200
1000
-
V/
s
t
gt
Gate controlled turn-on
I
TM
= 40 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
-
2
-
s
time
dI
G
/dt = 5 A/
s
t
q
Circuit commutated
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
-
70
-
s
turn-off time
I
TM
= 20 A; V
R
= 25 V; dI
TM
/dt = 30 A/
s;
dV
D
/dt = 50 V/
s; R
GK
= 100
Fig.1. Repetitive surge conditions. I
P
=60A (f=50Hz) at Tc=45C. Maximum number of cycles n=100k. Repetitive
cycle T=3 seconds minimum.
10ms
Ip = 60 A
3 s (Minimum)
March 2001
2
Rev 1.001
Philips Semiconductors
Product specification
Thyristor
BTH151S-650R
High Repetitive Surge
Fig.2. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
103C.
Fig.7. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
1
2
3
4
5
6
7
8
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
IF(AV) / A
Ptot / W
Tmb(max) / C
125
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
116
107
98
1
10
100
1000
0
20
40
60
80
100
120
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
1
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
10
100
1000
10us
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
-50
0
50
100
150
0
5
10
15
Tmb / C
IT(RMS) / A
103 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
March 2001
3
Rev 1.001
Philips Semiconductors
Product specification
Thyristor
BTH151S-650R
High Repetitive Surge
Fig.8. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.9. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.10. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.11. Typical and maximum on-state characteristic.
Fig.12. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.13. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
0
5
10
15
20
25
30
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.06 V
Rs = 0.0304 ohms
typ
max
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT145
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
t
p
P
t
D
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
RGK = 100 Ohms
March 2001
4
Rev 1.001
Philips Semiconductors
Product specification
Thyristor
BTH151S-650R
High Repetitive Surge
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
Fig.14. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.15. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
0.3
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
0.5
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
tab
7.0
7.0
2.15
2.5
4.57
1.5
March 2001
5
Rev 1.001
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