1.
Product profile
1.1 General description
Passivated high voltage, high commutation triac in a full pack, plastic package. This triac
is intended for use in motor control circuits where high blocking voltage, high static and
dynamic dV/dt as well as high dI/dt can occur. This device will commutate the full rated
RMS current at the maximum rated junction temperature, without the aid of a snubber.
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
SOT
BTA208X-1000C
Three quadrant triacs high commutation
Rev. 01 -- 4 October 2005
Product data sheet
s
False trigger immunity
s
Isolated package
s
1000 V V
DRM
guaranteed
s
Motor control
s
Reversible induction motors
s
I
TSM
65 A
s
I
T(RMS)
8 A
s
V
DRM
1000 V
s
I
GT
35 mA
Table 1:
Pinning
Pin
Description
Simplified outline
Symbol
1
main terminal 1 (T1)
SOT186A (3-lead TO-220F)
2
main terminal 2 (T2)
3
gate (G)
mb
mounting base; isolated
3
2
1
mb
sym051
T1
G
T2
BTA208X-1000C_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2005
2 of 12
Philips Semiconductors
BTA208X-1000C
Three quadrant triacs high commutation
3.
Ordering information
4.
Limiting values
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BTA208X-1000C
TO-220F
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 `full pack'
SOT186A
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
-
1000
V
I
T(RMS)
RMS on-state current
full sine wave; T
h
73
C; see
Figure 4
and
5
-
8
A
I
TSM
non-repetitive peak on-state current
full sine wave; T
j
= 25
C prior
to surge; see
Figure 2
and
3
t = 20 ms
-
65
A
t = 16.7 ms
-
71
A
I
2
t
I
2
t for fusing
t = 10 ms
-
21
A
2
s
dl
T
/dt
rate of rise of on-state current
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
s
-
100
A/
s
I
GM
peak gate current
-
2
A
P
GM
peak gate power
-
5
W
P
G(AV)
average gate power
over any 20 ms period
-
0.5
W
T
stg
storage temperature
-
40
+150
C
T
j
junction temperature
-
125
C
BTA208X-1000C_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2005
3 of 12
Philips Semiconductors
BTA208X-1000C
Three quadrant triacs high commutation
= conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aaa967
4
8
12
P
tot
0
I
T(RMS)
(A)
0
10
8
4
6
2
2
6
10
(W)
71
80
89
107
116
125
98
T
h(max)
(
C)
= 180
120
90
60
30
003aaa968
40
20
60
80
I
TSM
0
n
1
10
3
10
2
10
(A)
I
TSM
t
I
T
T
j
= 25
C max
t
p
BTA208X-1000C_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2005
4 of 12
Philips Semiconductors
BTA208X-1000C
Three quadrant triacs high commutation
Fig 3.
Non-repetitive peak on-state current as a function of pulse width; maximum values
f = 50 Hz; T
h
73
C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of heatsink
temperature; maximum values
003aab121
t
p
(ms)
10
-
2
10
2
10
10
-
1
1
10
2
10
3
I
TSM
(A)
10
dl
T
/dt limit
I
TSM
t
I
T
T
j(init)
= 25
C max
T
0
5
10
15
20
25
surge duration (s)
10
-
2
10
1
10
-
1
003aaa970
I
T(RMS)
(A)
T
h
(
C)
-
50
150
100
0
50
003aaa969
4
6
2
8
10
I
T(RMS)
0
73
C
(A)
BTA208X-1000C_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 4 October 2005
5 of 12
Philips Semiconductors
BTA208X-1000C
Three quadrant triacs high commutation
5.
Thermal characteristics
[1]
Full or half cycle; with heatsink compound.
[2]
Full or half cycle; without heatsink compound.
6.
Isolation characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-h)
thermal resistance from junction to
heatsink
see
Figure 6
[1]
-
-
4.5
K/W
see
Figure 6
[2]
-
-
6.5
K/W
R
th(j-a)
thermal resistance from junction to
ambient
in free air
-
55
-
K/W
(1) Unidirectional without heatsink compound
(2) Unidirectional with heatsink compound
(3) Bidirectional without heatsink compound
(4) Bidirectional with heatsink compound
Fig 6.
Transient thermal impedance from junction to heatsink as a function of pulse width
003aaa972
t
p
(s)
10
-
5
1
10
10
-
1
10
-
2
10
-
4
10
-
3
1
10
-
1
10
Z
th(j-h)
10
-
2
(K/W)
(1)
(2)
(3)
(4)
t
p
P
D
t
Table 5:
Isolation limiting values and characteristics
T
h
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
isol(rms)
RMS isolation voltage
f = 50 Hz to 60 Hz; sinusoidal
waveform; RH
65 %; clean and dust
free; from all three terminals to
external heatsink
-
-
2500
V
C
isol
isolation capacitance
f = 1 MHz; from pin 2 to external
heatsink
-
10
-
pF
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