1.
Product profile
1.1 General description
Passivated, guaranteed commutation triacs in a plastic package. The `sensitive gate' E
and ER series are intended for interfacing with low power drivers, including
microcontrollers. The high commutation B series are designed to commutate the full RMS
current at the maximum junction temperature without the aid of a snubber.
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
BTA201 series B, E and ER
Triacs logic level
Rev. 02 -- 13 January 2006
Product data sheet
s
Suitable for interfacing with low power
drivers, including microcontrollers
s
Reverse pinning option (ER type)
s
Motor control
s
Solenoid drivers
s
I
TSM
12.5 A
s
I
T(RMS)
1 A
s
V
DRM
600 V (BTA201-600B)
s
I
GT
50 mA (BTA201-600B)
s
V
DRM
600 V (BTA201-600E)
s
I
GT
10 mA (BTA201-600E)
s
V
DRM
800 V (BTA201-800B)
s
I
GT
50 mA (BTA201-800B)
s
V
DRM
800 V (BTA201-800E)
s
I
GT
10 mA (BTA201-800E)
s
V
DRM
800 V (BTA201-800ER)
s
I
GT
10 mA (BTA201-800ER)
Table 1:
Pinning
Pin
Description
Simplified outline
Symbol
B and E series
SOT54 (TO-92)
1
main terminal 2 (T2)
2
gate (G)
3
main terminal 1 (T1)
ER series
1
main terminal 1 (T1)
2
gate (G)
3
main terminal 2 (T2)
1
2
3
sym051
T1
G
T2
BTA201_SER_B_E_ER_2
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 -- 13 January 2006
2 of 12
Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/
s.
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BTA201-600B
TO-92
plastic single-ended leaded (through hole) package; 3 leads
SOT54
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
BTA201-600B
[1]
-
600
V
BTA201-600E
[1]
-
600
V
BTA201-800B
-
800
V
BTA201-800E
-
800
V
BTA201-800ER
-
800
V
I
T(RMS)
RMS on-state current
full sine wave; T
lead
54.3
C;
see
Figure 4
and
5
-
1
A
I
TSM
non-repetitive peak on-state current
full sine wave;
T
j
= 25
C prior to surge; see
Figure 2
and
3
t = 20 ms
-
12.5
A
t = 16.7 ms
-
13.7
A
I
2
t
I
2
t for fusing
t = 10 ms
-
0.78
A
2
s
dl
T
/dt
rate of rise of on-state current
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
s
-
50
A/
s
I
GM
peak gate current
-
2
A
P
GM
peak gate power
-
5
W
P
G(AV)
average gate power
over any 20 ms period
-
0.1
W
T
stg
storage temperature
-
40
+150
C
T
j
junction temperature
-
125
C
BTA201_SER_B_E_ER_2
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 -- 13 January 2006
3 of 12
Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
= conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
0
0.5
1
1.5
0
0.2
0.4
0.6
0.8
1
1.2
I
T(RMS)
(A)
125
95
65
35
003aaa954
T
lead
(max)
(
C)
P
tot
(W)
= 180
120
90
60
30
1
10
10
2
10
3
0
4
8
12
I
TSM
(A)
n
16
003aaa956
BTA201_SER_B_E_ER_2
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 -- 13 January 2006
4 of 12
Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
t
p
20 ms
(1) dI
T
/dt limit
Fig 3.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
f = 50 Hz; T
lead
54.3
C
Fig 4.
RMS on-state current as a function of surge
duration; maximum values
Fig 5.
RMS on-state current as a function of lead
temperature; maximum values
10
I
TSM
(A)
10
3
10
2
10
-
1
10
-
2
10
-
3
10
-
4
10
-
5
t
p
(s)
(1)
003aaa955
I
TSM
t
I
T
T
j(init)
= 25
C max
T
1
10
0
1
2
3
surge duration (s)
I
T(RMS)
(A)
10
-
1
10
-
2
003aaa958
0
0.2
0.4
0.6
0.8
1
1.2
-
50
0
50
100
150
54.3
C
I
T(RMS)
(A)
T
lead
(
C)
003aaa957
BTA201_SER_B_E_ER_2
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 -- 13 January 2006
5 of 12
Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
5.
Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-lead)
thermal resistance from junction to
lead
full cycle; see
Figure 6
-
-
60
K/W
half cycle; see
Figure 6
-
-
80
K/W
R
th(j-a)
thermal resistance from junction to
ambient
printed-circuit board
mounted; lead
length = 4 mm
-
150
-
K/W
(1) Unidirectional
(2) Bidirectional
Fig 6.
Transient thermal impedance as a function of pulse duration
10
-
1
10
-
2
1
10
Z
th(j-lead)
(K/W)
t
p
(s)
10
-
5
1
10
10
-
1
10
-
2
10
-
4
10
-
3
(1)
(2)
10
2
003aaa961
t
p
P
t
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