1.
Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features
s
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
s
General purpose switching and phase control applications.
1.4 Quick reference data
2.
Pinning information
BT169 series
Thyristors logic level
Rev. 04 -- 23 August 2004
Product data sheet
s
V
DRM
, V
RRM
200 V (BT169B)
s
I
T(RMS)
0.8 A
s
V
DRM
, V
RRM
400 V (BT169D)
s
I
T(AV)
0.5 A
s
V
DRM
, V
RRM
600 V (BT169G)
s
I
TSM
8 A.
Table 1:
Discrete pinning
Pin
Description
Simplified outline
Symbol
1
anode (a)
SOT54 (TO-92)
2
gate (g)
3
cathode (k)
1
2
3
sym037
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Product data sheet
Rev. 04 -- 23 August 2004
2 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/
s.
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BT169B
-
plastic single-ended leaded (through hole) package; 3 leads
SOT54
BT169D
BT169G
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
, V
RRM
repetitive peak off-state voltages
BT169B
[1]
-
200
V
BT169D
[1]
-
400
V
BT169G
[1]
-
600
V
I
T(AV)
average on-state current
half sine wave;
T
lead
83
C;
see
Figure 1
-
0.5
A
I
T(RMS)
RMS on-state current
all conduction angles;
see
Figure 4
and
5
-
0.8
A
I
TSM
non-repetitive peak on-state current
half sine wave;
T
j
= 25
C prior to
surge;
see
Figure 2
and
3
t = 10 ms
-
8
A
t = 8.3 ms
-
9
A
I
2
t
I
2
t for fusing
t = 10 ms
-
0.32
A
2
s
dI
T
/dt
repetitive rate of rise of on-state
current after triggering
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/
s
-
50
A/
s
I
GM
peak gate current
-
1
A
V
GM
peak gate voltage
-
5
V
V
RGM
peak reverse gate voltage
-
5
V
P
GM
peak gate power
-
2
W
P
G(AV)
average gate power
over any 20 ms period
-
0.1
W
T
stg
storage temperature
-
40
+150
C
T
j
junction temperature
-
125
C
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Product data sheet
Rev. 04 -- 23 August 2004
3 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
a = form factor = I
T(RMS)
/I
T(AV)
.
Fig 1.
Total power dissipation as a function of average on-state current; maximum values.
f = 50 Hz.
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values.
001aab446
0.4
0.2
0.6
0.8
P
tot
(W)
0
101
113
89
77
125
I
T(AV)
(A)
0
0.6
0.4
0.2
0.1
0.5
0.3
4
a =
1.57
2.2
1.9
2.8
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
T
c(max)
(
C)
001aab499
4
6
2
8
10
I
TSM
(A)
0
n
1
10
3
10
2
10
t
p
T
j
initial = 25
C max
I
T
I
TSM
t
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Product data sheet
Rev. 04 -- 23 August 2004
4 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
t
p
10 ms.
Fig 3.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
values.
f = 50 Hz; T
lead
83
C.
(1) T
lead
= 83
C.
Fig 4.
RMS on-state current as a function of surge
duration for sinusoidal currents.
Fig 5.
RMS on-state current as a function of lead
temperature; maximum values.
001aab497
t
p
(s)
10
-
5
10
-
2
10
-
3
10
-
4
10
2
10
10
3
I
TSM
(A)
1
t
p
T
j
initial = 25
C max
I
T
I
TSM
t
001aab449
1
0.5
1.5
2
I
T(RMS)
(A)
0
surge duration (s)
10
-
2
10
-
1
10
1
T
lead
(
C)
-
50
150
100
0
50
001aab450
0.4
0.6
0.2
0.8
1
I
T(RMS)
(A)
0
(1)
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Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 -- 23 August 2004
5 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
5.
Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-lead)
thermal resistance from junction to
lead
-
-
60
K/W
R
th(j-a)
thermal resistance from junction to
ambient
printed-circuit board
mounted; lead length = 4 mm
-
150
-
K/W
Fig 6.
Transient thermal impedance as a function of pulse width.
001aab451
1
10
2
10
-
1
10
Z
th(j-lead)
(K/W)
10
-
2
t
p
(s)
10
-
5
1
10
10
-
1
10
-
2
10
-
4
10
-
3
t
p
t
p
T
P
t
T
=
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Product data sheet
Rev. 04 -- 23 August 2004
6 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
6.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise stated.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA;
gate open circuit; see
Figure 8
-
50
200
A
I
L
latching current
V
D
= 12 V; I
GT
= 0.5 mA;
R
GK
= 1 k
; see
Figure 10
-
2
6
mA
I
H
holding current
V
D
= 12 V; I
GT
= 0.5 mA;
R
GK
= 1 k
; see
Figure 11
-
2
5
mA
V
T
on-state voltage
I
T
= 1.2 A
-
1.25
1.7
V
V
GT
gate trigger voltage
I
T
= 10 mA; gate open circuit;
see
Figure 7
V
D
= 12 V
-
0.5
0.8
V
V
D
= V
DRM(max)
; T
j
= 125
C
0.2
0.3
-
V
I
D
, I
R
off-state leakage
current
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
;
T
j
= 125
C; R
GK
= 1 k
-
0.05
0.1
mA
Dynamic characteristics
dV
D
/dt
critical rate of rise of
off-state voltage
V
DM
= 67 % V
DRM(max)
; T
j
= 125
C;
exponential waveform;
see
Figure 12
R
GK
= 1 k
500
800
-
V/
s
gate open circuit
-
25
-
V/
s
t
gt
gate controlled
turn-on time
I
TM
= 2 A; V
D
= V
DRM(max)
;
I
G
= 10 mA; dI
G
/dt = 0.1 A/
s
-
2
-
s
t
q
circuit commuted
turn-off time
V
D
= 67 % V
DRM(max)
; T
j
= 125
C;
I
TM
= 1.6 A; V
R
= 35 V;
dI
TM
/dt = 30 A/
s; dV
D
/dt = 2 V/
s;
R
GK
= 1 k
-
100
-
s
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Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 -- 23 August 2004
7 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
Fig 7.
Normalized gate trigger voltage as a function of
junction temperature.
Fig 8.
Normalized gate trigger current as a function
junction temperature.
V
O
= 1.067 V.
R
S
= 0.187
.
(1) T
j
= 125
C; typical values.
(2) T
j
= 125
C; maximum values.
(3) T
j
= 25
C; maximum values.
R
GK
= 1 k
.
Fig 9.
On-state current characteristics.
Fig 10. Normalized latching current as a function of
junction temperature.
T
j
(
C)
-
50
150
100
0
50
001aab501
0.8
1.2
1.6
0.4
V
GT(Tj)
V
GT(25
C)
T
j
(
C)
-
50
150
100
0
50
001aab502
1
2
3
0
I
GT(Tj)
I
GT(25
C)
001aab454
V
T
(V)
0.4
2.8
2
1.2
2
3
1
4
5
I
T
(A)
0
(1)
(2)
(3)
T
j
(
C)
-
50
150
100
0
50
001aab503
1
2
3
0
I
L(Tj)
I
L(25
C)
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Product data sheet
Rev. 04 -- 23 August 2004
8 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
7.
Package information
Epoxy meets requirements of UL94 V-0 at
1
/
8
inch.
R
GK
= 1 k
.
(1) R
GK
= 1 k
.
(2) Gate open circuit.
Fig 11. Normalized holding current as a function of
junction temperature.
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical
values.
T
j
(
C)
-
50
150
100
0
50
001aab504
1
2
3
0
I
H(Tj)
I
H(25
C)
001aab507
T
j
(
C)
0
150
100
50
10
3
10
2
10
4
dV
D
/dt
(V/
s)
10
(1)
(2)
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Product data sheet
Rev. 04 -- 23 August 2004
9 of 12
Philips Semiconductors
BT169 series
Thyristors logic level
8.
Package outline
Fig 13. Package outline.
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L
1
(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43A
97-02-28
04-06-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
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Product data sheet
Rev. 04 -- 23 August 2004
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Philips Semiconductors
BT169 series
Thyristors logic level
9.
Revision history
Table 6:
Revision history
Document ID
Release date
Data sheet status
Change notice
Order number
Supersedes
BT169_SERIES_4
20040823
Product data sheet
-
9397 750 13512
BT169_SERIES_3
Modifications:
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Section 1.4 "Quick reference data"
: BT169E obsolete, removed from list.
Table 2 "Ordering information"
: BT169E obsolete, removed from table.
Table 3 "Limiting values"
: BT169E obsolete, removed from table.
BT169_SERIES_3
20010902
Product specification
-
not applicable
BT169_SERIES_2
BT169_SERIES_2
20010901
Product specification
-
not applicable
BT169_SERIES_1
BT169_SERIES_1
19970901
Product specification
-
not applicable
-
Philips Semiconductors
BT169 series
Thyristors logic level
9397 750 13512
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 -- 23 August 2004
11 of 12
10. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status `Production'),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level
Data sheet status
[1]
Product status
[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 23 August 2004
Document order number: 9397 750 13512
Published in The Netherlands
Philips Semiconductors
BT169 series
Thyristors logic level
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7
Package information . . . . . . . . . . . . . . . . . . . . . 8
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13
Contact information . . . . . . . . . . . . . . . . . . . . 11
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