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Электронный компонент: 74HC1G86

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DATA SHEET
Product specification
File under Integrated Circuits, IC06
1998 Aug 05
INTEGRATED CIRCUITS
74HC1G86; 74HCT1G86
2-input EXCLUSIVE-OR gate
1998 Aug 05
2
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
FEATURES
Wide operating voltage range:
2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 5 pins package
Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G86 is a
high-speed Si-gate CMOS device.
The 74HC1G/HCT1G86 provides the
2-input EXCLUSIVE-OR function.
The standard output currents are
1
/
2
compared to the 74HC/HCT86.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
INPUTS
OUTPUT
inA
inB
outY
L
L
L
L
H
H
H
L
H
H
H
L
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
=
6.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
(C
L
V
CC
2
f
o
) = sum of outputs.
2. For HC1G the condition is V
I
= GND to V
CC
;
For HCT1G the condition is V
I
= GND to V
CC
-
1.5 V.
PINNING
SYMBOL
PARAMETER
CONDITIONS
TYP.
UNIT
HC1G
HCT1G
t
PHL
/ t
PLH
propagation delay
inA, inB to outY
C
L
= 15 pF
V
CC
= 5 V
9
10
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation
capacitance
notes 1 and 2
23
23
pF
PIN
SYMBOL
DESCRIPTION
1 and 2
inB, inA
data inputs
3
GND
ground (0 V)
4
outY
data output
5
V
CC
DC supply voltage
1998 Aug 05
3
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
ORDERING AND PACKAGE INFORMATION
OUTSIDE NORTH
AMERICA
PACKAGES
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74HC1G86GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
HH
74HCT1G86GW
5
SC-88A
plastic
SOT353
TH
Fig.1 Pin configuration.
handbook, halfpage
1
2
3
5
4
MNA037
86
VCC
inA
outY
GND
inB
Fig.2 Logic symbol.
handbook, halfpage
MNA038
inB
inA
outY
2
1
4
Fig.3 IEC logic symbol.
handbook, halfpage
1
2
= 1
4
MNA039
Fig.4 Logic diagram.
handbook, halfpage
MNA040
outY
inB
inA
1998 Aug 05
4
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
74HC1G
74HCT1G
UNIT
CONDITIONS
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
DC supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
V
I
input voltage
0
-
V
CC
0
-
V
CC
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature range
-
40
+25
+
125
-
40
+25
+125
C
see DC and AC
characteristics per
device
t
r
,t
f
input rise and fall times
except for Schmitt-trigger
inputs
-
-
1000
-
-
-
ns
V
CC
= 2.0 V
-
-
500
-
-
500
ns
V
CC
= 4.5 V
-
-
400
-
-
-
ns
V
CC
= 6.0 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
DC supply voltage
-
0.5
+7.0
V
I
IK
DC input diode current
V
I
< -
0.5 or V
I
>
V
CC
+ 0.5 V; note 1
-
20
mA
I
OK
DC output diode current
V
O
< -
0.5 or V
O
>
V
CC
+ 0.5 V; note 1
-
20
mA
I
O
DC output source or sink current
standard outputs
-
0.5 V
<
V
O
<
V
CC
+
0.5 V; note 1
-
12.5
mA
I
CC
DC V
CC
or GND current for types
with standard outputs
note 1
-
25
mA
T
stg
storage temperature range
-
65
+150
C
P
D
power dissipation per package
for temperature range:
-
40 to +125
C
5 pins plastic SC-88A
above +55
C derate linearly with
2.5 mW/K
-
200
mW
1998 Aug 05
5
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
DC CHARACTERISTICS FOR THE 74HC1G
Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Note
1. All typical values are measured at T
amb
= 25
C.
SYMBOL
PARAMETER
T
amb
(
C)
UNIT
TEST CONDITIONS
-
40 to +85
-
40 to +125
V
CC
(V)
OTHER
MIN.
TYP.
(1)
MAX.
MIN.
MAX.
V
IH
HIGH-level input
voltage
1.5
1.2
-
1.5
-
V
2.0
3.15
2.4
-
3.15
-
V
4.5
4.2
3.2
-
4.2
-
V
6.0
V
IL
LOW-level input voltage
-
0.8
0.5
-
0.5
V
2.0
-
2.1
1.35
-
1.35
V
4.5
-
2.8
1.8
-
1.8
V
6.0
V
OH
HIGH-level output
voltage; all outputs
1.9
2.0
-
1.9
-
V
2.0
V
I
= V
IH
or V
IL
;
-
I
O
= 20
A
4.4
4.5
-
4.4
-
V
4.5
5.9
6.0
-
5.9
-
V
6.0
V
OH
HIGH-level output
voltage; standard
outputs
4.13
4.32
-
3.7
-
V
4.5
V
I
= V
IH
or V
IL
;
-
I
O
= 2.0 mA
5.63
5.81
-
5.2
-
V
6.0
V
I
= V
IH
or V
IL
;
-
I
O
= 2.6 mA
V
OL
LOW-level output
voltage; all outputs
-
0
0.1
-
0.1
V
2.0
V
I
= V
IH
or V
IL
;
I
O
= 20
A
-
0
0.1
-
0.1
V
4.5
-
0
0.1
-
0.1
V
6.0
V
OL
LOW-level output
voltage; standard
outputs
-
0.15
0.33
-
0.4
V
4.5
V
I
= V
IH
or V
IL
;
I
O
= 2.0 mA
-
0.16
0.33
-
0.4
V
6.0
V
I
= V
IH
or V
IL
;
I
O
= 2.6 mA
I
I
input leakage current
-
-
1.0
-
1.0
A
6.0
V
I
= V
CC
or GND
I
CC
quiescent supply
current
-
-
10
-
20
A
6.0
V
I
= V
CC
or GND;
I
O
= 0
1998 Aug 05
6
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
DC CHARACTERISTICS FOR THE 74HCT1G
Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Note
1. All typical values are measured at T
amb
= 25
C.
SYMBOL
PARAMETER
T
amb
(
C)
UNIT
TEST CONDITIONS
-
40 to +85
-
40 to +125
V
CC
(V)
OTHER
MIN.
TYP.
(1)
MAX.
MIN.
MAX.
V
IH
HIGH-level input
voltage
2.0
1.6
-
2.0
-
V
4.5 to 5.5
V
IL
LOW-level input
voltage
-
1.2
0.8
-
0.8
V
4.5 to 5.5
V
OH
HIGH-level output
voltage; all outputs
4.4
4.5
-
4.4
-
V
4.5
V
I
= V
IH
or V
IL
;
-
I
O
= 20
A
V
OH
HIGH-level output
voltage; standard
outputs
4.13
4.32
-
3.7
-
V
4.5
V
I
= V
IH
or V
IL
;
-
I
O
= 2.0 mA
V
OL
LOW-level output
voltage; all outputs
-
0
0.1
-
0.1
V
4.5
V
I
= V
IH
or V
IL
;
I
O
= 20
A
V
OL
LOW-level output
voltage; standard
outputs
-
0.15
0.33
-
0.4
V
4.5
V
I
= V
IH
or V
IL
;
I
O
= 2.0 mA
I
I
input leakage current
-
-
1.0
-
1.0
A
5.5
V
I
= V
CC
or GND
I
CC
quiescent supply
current
-
-
10.0
-
20.0
A
5.5
V
I
= V
CC
or GND;
I
O
= 0
I
CC
additional supply
current per input
-
-
500
-
850
A
4.5 to 5.5
V
I
= V
CC
-
2.1 V;
I
O
= 0
1998 Aug 05
7
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
AC CHARACTERISTICS FOR 74HC1G86
GND = 0 V; t
r
= t
f
=
6.0 ns; C
L
= 50 pF.
Note
1. All typical values are measured at T
amb
= 25
C.
AC CHARACTERISTICS FOR 74HCT1G86
GND = 0 V; t
r
= t
f
=
6.0 ns; C
L
= 50 pF.
Note
1. All typical values are measured at T
amb
= 25
C.
SYMBOL
PARAMETER
T
amb
(
C)
UNIT
TEST CONDITIONS
-
40 to +85
-
40 to +125
V
CC
(V)
WAVEFORMS
MIN.
TYP.
(1)
MAX.
MIN.
MAX.
t
PHL
/t
PLH
propagation delay
inA, inB to outY
-
22
115
-
135
ns
2.0
see Figs 5 and 6
-
11
23
-
27
ns
4.5
-
9
20
-
23
ns
6.0
SYMBOL
PARAMETER
T
amb
(
C)
UNIT
TEST CONDITIONS
-
40 to +85
-
40 to +125
V
CC
(V)
WAVEFORMS
MIN.
TYP.
(1)
MAX.
MIN.
MAX.
t
PHL
/t
PLH
propagation delay
inA, inB to outY
-
13
23
-
27
ns
4.5
see Figs 5 and 6
1998 Aug 05
8
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
AC WAVEFORMS
Fig.5
The input (inA, inB) to output (outY)
propagation delays.
handbook, halfpage
MNA041
tPHL
tPLH
VM
(1)
VM
(1)
inA, inB INPUT
outY OUTPUT
(1) HC1G: V
M
= 50
%
; V
I
= GND to V
CC
;
HCT1G: V
M
= 1.3 V; V
I
= GND to 3.0 V.
Fig.6 Load circuitry for switching times.
Definitions for test circuit:
C
L
= load capacitance including jig and probe capacitance
(see "AC characteristics for 74HC1G86" and
"AC characteristics for 74HCT1G86" for values).
R
T
= termination resistance should be equal to the output
impedance Z
O
of the pulse generator.
handbook, halfpage
VCC
VI
VO
MNA034
D.U.T.
CL
50 pF
RT
PULSE
GENERATOR
1998 Aug 05
9
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT353
w
B
M
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
c
X
1
3
2
4
5
Plastic surface mounted package; 5 leads
SOT353
UNIT
A1
max
bp
c
D
E
(2)
e
1
HE
Lp
Q
y
w
v
mm
0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28
SC-88A
1998 Aug 05
10
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250
C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45
C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
The longitudinal axis of the package footprint must be
parallel to the solder flow.
The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260
C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150
C within
6 seconds. Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300
C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320
C.
1998 Aug 05
11
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Printed in The Netherlands
245106/00/01/pp12
Date of release: 1998 Aug 05
Document order number:
9397 750 03668