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Transistors with built-in Resistor
1
Publication date: July 2001
SJH00044AED
UNRL110/111/113/114/115
Silicon PNP epitaxial planer type
For digital circuit
I Features
Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing.
The PCB mounting area is 1/10 of that of lead type package (3-pin
MINI-type package).
I Resistance by Part Number
Marking Symbol
(R
1
)
(R
2
)
UNRL110
P
47 k
UNRL111
A
10 k
10 k
UNRL113
B
47 k
47 k
UNRL114
R
10 k
47 k
UNRL115
M
10 k
I Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
-50
V
Collector to emitter voltage
V
CEO
-50
V
Collector current
I
C
-100
mA
Total power dissipation
*
P
T
150
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= -50 V, I
E
= 0
- 0.1
A
I
CEO
V
CE
= -50 V, I
B
= 0
- 0.5
Emitter cutoff
UNRL111
I
EBO
V
EB
= -6 V, I
C
= 0
- 0.5
mA
current
UNRL114
- 0.2
UNRL113
- 0.1
UNRL110/115
- 0.01
Collector to base voltage
V
CBO
I
C
= -10 A, I
E
= 0
-50
V
Collector to emitter voltage
V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Forward current
UNRL111
h
FE
V
CE
= -10 V, I
C
= -5 mA
35
transfer ratio
UNRL113/114
80
UNRL110/115
160
460
Collector to emitter saturation voltage
V
CE(sat)
I
C
= -10 mA, I
B
= - 0.3 mA
- 0.25
V
I Electrical Characteristics T
a
= 25C 3C
Note) *: Printed circuit board copper foil for collector portion
area: 20.0 mm
2
or more, thickness: 1.6 mm
1
2
3
4
1.00
0.05
0.80
0.05
0.60
0.05
0.020
0.010
0.60
2
1
4
3
0.50
0.05
0.03
0.20
0.03
0.30
0.03
0.05
0.03
1
R
2
2
3
4
R
1
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
UNRL110/111/113/114/115
2
SJH00044AED
I Electrical Characteristics(continued) T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
High-level output voltage
V
OH
V
CC
= -5 V, V
B
= - 0.5 V, R
L
= 1 k
-4.9
V
Low-level output voltage
V
OL
V
CC
= -5 V, V
B
= -2.5 V, R
L
= 1 k
- 0.2
V
UNRL113
V
CC
= -5 V, V
B
= -3.5 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Input resistance
UNRL111/114/115
R
1
-30%
10
+30%
k
UNRL110/113
47
Resistance ratio
UNRL111/113
R
1
/R
2
0.8
1.0
1.2
UNRL114
0.17
0.21
0.25
Common characteristics chart
P
T
T
a
Characteristics charts of UNRL110
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
0
20
60
100
140
40
120
80
180
140
100
80
60
20
Ambient temperature T
a
(
C)
Total power dissipation P
T
(mW
)
40
120
160
0
0
-12
-2
-10
-4
-8
-6
-120
-100
-80
-60
-40
-20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
-0.01
-0.03
-0.1 -0.3
-0.1
-0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Collector to emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
-3
100
200
300
400
-10 -30 -100 -300 -1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
UNRL110/111/113/114/115
3
SJH00044AED
Characteristics charts of UNRL111
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
-0.1 -0.3
6
5
4
3
2
1
-1
-3
-10 -30 -100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
-3
-0.4
-10
-30
-100
-300
-1 000
-3 000
-10 000
-1.4
-1.2
-1.0
-0.8
-0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
-0.01
-0.03
-0.1 -0.3
-0.1
-0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
-140
-100
-60
-20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
-0.01
-0.03
-0.1 -0.3
-0.1
-0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Collector to emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
-3
40
80
120
160
-10 -30 -100 -300 -1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
0
-0.1 -0.3
6
5
4
3
2
1
-1
-3
-10 -30 -100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
-3
-0.4
-10
-30
-100
-300
-1 000
-3 000
10 000
-1.4
-1.2
-1.0
-0.8
-0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
-0.01
-0.03
-0.1 -0.3
-0.1
-0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
UNRL110/111/113/114/115
4
SJH00044AED
Characteristics charts of UNRL113
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNRL114
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
-140
-100
-60
-20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
-0.01
-0.03
-0.1 -0.3
-0.1
-0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Collector to emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
-3
100
200
300
400
-10 -30 -100 -300 -1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
-0.01
-0.03
-0.1 -0.3
-0.1
-0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= -0.2 V
T
a
= 25C
-1
-3
-0.4
-10
-30
-100
-300
-1 000
-3 000
-10 000
-1.4
-1.2
-1.0
-0.8
-0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
0
-0.1 -0.3
6
5
4
3
2
1
-1
-3
-10 -30 -100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
-140
-100
-60
-20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
-0.01
-0.03
-0.1 -0.3
-0.1
-0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Collector to emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
-3
100
200
300
400
-10 -30 -100 -300 -1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
UNRL110/111/113/114/115
5
SJH00044AED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNRL115
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
-0.1 -0.3
6
5
4
3
2
1
-1
-3
-10 -30 -100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
-3
-0.4
-10
30
-100
-300
-1 000
-3 000
10 000
-1.4
-1.2
-1.0
-0.8
-0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
-0.1
-0.3
-0.1 -0.3
-1
-3
-10
-30
-100
-300
-1 000
-1
-3
-10 -30 -100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= -0.2 V
T
a
= 25C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
-140
-100
-60
-20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
=
-1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
-0.01
-0.03
-0.1 -0.3
-0.1
-0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Collector to emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
-3
100
200
300
400
-10 -30 -100 -300 -1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
-0.1 -0.3
6
5
4
3
2
1
-1
-3
-10 -30 -100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
-3
-0.4
-10
-30
-100
-300
-1 000
-3 000
-10 000
-1.4
-1.2
-1.0
-0.8
-0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
-0.01
-0.03
-0.1 -0.3
-0.1
-0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= -0.2 V
T
a
= 25C
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