1
Power Transistor Arrays (F-MOS FETs)
unit: mm
PUB4701
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
G: Gate
D: Drain
S: Source
10-Lead Plastic SIL Package
s Electrical Characteristics
(T
C
= 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
Conditions
V
DS
= 120V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
GS
= 4V, I
D
= 3A
V
DS
= 10V, I
D
= 3A
I
DR
= 3A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 3A
V
DD
= 100V, R
L
= 33.3
min
150
1
3
typ
0.42
0.5
5.3
620
120
35
10
30
85
290
max
10
1
2.5
0.6
0.7
-
1.7
Unit
A
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
25.30.2
8.0
9.50.2
1.650.2
4.40.5
4.00.2
2.540.2
0.80.25
9
!
2.54=22.860.25
0.50.15
1.00.25
0.50.15
C1.50.5
1
3
5
7
2
4
6
8
9 10
s Absolute Maximum Ratings
(T
C
= 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25C
Ta = 25C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
150
20
6
12
22.5
15
3.5
150
-
55 to +150
Unit
V
V
A
A
mJ
W
C
C
*
L = 5mH, I
L
= 3A, 1 pulse
2
Power Transistor Arrays (F-MOS FETs)
PUB4701
Area of safe operation (ASO)
P
D
Ta
I
D
V
DS
I
D
V
GS
R
DS(on)
I
D
100
10
3
30
0.1
10
3
1
0.3
Non repetitive pulse
T
C
=25C
I
DP
t=1ms
10ms
50ms
I
D
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
0
160
40
120
80
140
20
100
60
0
16
12
4
10
14
8
2
6
(1) T
C
=Ta
(2) With a 50
50
2mm
Al heat sink
(3) Without heat sink
(1)
(2)
(3)
Ambient temperature Ta (C)
Allowable power dissipation P
D
(W
)
0
20
16
4
12
8
0
7
6
5
3
4
2
1
0
7
6
5
3
4
2
1
T
C
=25C
3.5V
3.0V
4.0V
2.5V
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
V
DS
=10V
T
C
=25C
Gate to source voltage V
GS
(V)
Drain current I
D
(A
)
0
6
5
4
1
3
2
0
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
=4V
10V
T
C
=25C
Drain current I
D
(A)
Drain to source ON-resistance R
DS(on)
(m
)
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