s
Electrical Characteristics
(Ta = 25C)
G a A s M M I C s
GN1010
G N 1 0 1 0
GaAs N-Channel MES IC
For high-output high-gain amplification
s
Features
q
General-use wide-band amplifier
q
Low noise
q
With bandwidth control pin
s
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Power supply voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GS
I
D
I
G
P
D
T
ch
T
stg
Rating
6
4
45
3
200
150
55 to +150
Unit
V
V
mA
mA
mW
C
C
Parameter
Drain current
Noise figure
Power gain
I
dB
compression output
Symbol
I
DD
* 1
NF
* 2
PG
* 2
P
O
* 2
Condition
V
DS
= 3V
V
DS
= 3V, f= 0.5GHz
V
DS
= 3V, f=1.8GHz
V
DS
= 3V, f= 0.5GHz
V
DS
= 3V, f=1.8GHz
V
DS
= 3V, f= 0.5GHz
V
DS
= 3V, f=1.8GHz
Min
5
5
8
Typ
30
2
10
9
15
Max
45
3
Unit
mA
dB
dB
dBm
Unit : mm
* 1
I
DD
rank classification
1 : Source
2 : Drain
3 : C
4 : Gate
Mini Type Package (4-pin)
Rank
I
DD
(mA)
P
5 to 20
Q
15 to 30
R
25 to 45
* 2
NF, PG, P
O
test circuit
s
Equivalent Circuit
3
4
1
2
V
D
Cc
C = 1000 pF
Cc = 200 pF
Cf = 27 pF
Cc
Cf
C
C
G
S
2.8
+0.2
0.3
1.5
+0.2
0.3
0.65
0.15
0.65
0.15
0.5R
1
2
4
3
0.95
0.95
1.9
0.2
2.9
0.2
0.4
+0.1
0.05
1.1
+0.2
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+0.1
0.06
| S
11
|, | S
22
| f
G a A s M M I C s
GN1010
NF, PG f
P
out,
IM
2,
IM
3
P
in
PG, NF f
| S
21
|, | S
12
| f
0
2
4
6
8
10
12
0.1
0.3
1
3
10
Frequency f (GHz)
Power gain PG
(dB
)
Noise figure NF
(dB
)
V
DD
=3V
Ta=25C
PG
NF
30
20
10
0
10
20
30
10
30
100
300
1000 3000 10000
Frequency f (MHz)
Forward transfer gain, Reverse transfer gain
| S
21
| , | S
12
|
(dB
)
V
DD
=3V
Ta=25C
| S
21
|
| S
12
|
40
30
20
10
0
10
20
10
30
100
300
1000 3000 10000
Frequency f (MHz)
Forward transfer gain, Reverse transfer gain
| S
11
| , | S
22
|
(dB
)
| S
22
|
V
DD
=3V
Ta=25C
| S
11
|
0.1
0.3
0.5
1.0
2.0
1
0
2
3
0
10
20
V
DD
=3V
Cf=27pF
PG
NF
Frequency f (GHz)
Noise figure NF
(dB
)
Power gain PG
(dB
)
40
20
0
20
80
60
40
0
20
40
20
Pin (dBm)
P
out
, IM
2
, IM
3
(dBm
)
90MHz
500MHz
1800MHz
V
DD
=3V
Cf=27pF
I.P
P
out
IM
2
IM
3
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