Unit
A
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
C/W
C/W
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
Allowable power
T
C
= 25C
dissipation
Ta= 25C
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Unit
V
V
A
A
mJ
W
C
C
P o w e r F - M O S F E T s
2SK2538
2 S K 2 5 3 8
Silicon N-Channel Power F-MOS
s
Features
q
Avalanche energy capability guaranteed
q
High-speed switching
q
No secondary breakdown
s
Applications
q
High-speed switching (switching mode regulator)
q
For high-frequency power amplification
s
Absolute Maximum Ratings
(Tc = 25C)
s
Electrical Characteristics
(Tc = 25C)
Condition
V
DS
= 200V, V
GS
= 0
V
GS
=30V, V
DS
= 0
I
D
=1mA, V
GS
= 0
V
DS
=10V, I
D
=1mA
V
GS
=10V, I
D
=1A
V
DS
= 25V, I
D
=1A
I
DR
= 2A, V
GS
= 0
V
DS
=10V, V
GS
= 0, f=1MHz
V
DD
= 200V, I
D
= 2A
V
GS
=10V, R
L
=100
Min
250
1
0.5
Typ
1.2
1
220
60
20
10
20
45
90
Max
100
1
5
2
1.6
4.17
62.5
Unit : mm
1 : Gate
2 : Drain
3 : Source
TO-220 Full Pack Package (a)
Rating
250
30
2
4
10
30
2
150
55 to +150
* L= 5mH, I
L
= 2A, V
DD
= 30V, 1 pulse
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
-0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
Area of safe operation (ASO)
P
D
Ta
C
iss,
C
oss,
C
rss
V
DS
EAS
T
j
I
D
V
DS
I
D
V
GS
R
DS(on)
I
D
| Y
fs
|
I
D
t
d(on),
t
r,
t
f,
t
d(off)
I
D
P o w e r F - M O S F E T s
2SK2538
0.01
1
0.1
1
10
100
0.03
0.3
3
30
10
100
1000
3
30
300
Drain-Source voltage V
DS
(V)
Drain current I
D
(A
)
Non repetitive pulse
T
C
=25C
I
DP
t=1ms
t=10ms
DC
I
D
t=100ms
0
10
20
30
40
0
40
80
120
160
20
60
100
140
Ambient temperature Ta (C)
Allowable power dissipation P
D
(W
)
(1) T
C
=Ta
(2) Without heat sink
(P
D
=2.0W)
(1)
(2)
0
2
4
6
8
10
12
25
50
75
100
125
150
175
Junction temperature T
j
(C)
Avalanche energy capability EAS (mJ)
V
DD
=30V
I
D
=2A
0
1
2
3
4
5
0
4
8
12
16
20
Drain voltage V
DS
(V)
Drain current I
D
(A
)
T
C
=25C
5.0V
5.5V
6.0V
6.5V
30W
7.0V
8.0V
9.0V
V
GS
=10.0V
0
1
2
3
4
5
0
2
4
6
8
10
Gate-Source voltage V
GS
(V)
Drain current I
D
(A
)
V
DS
=10V
T
C
=25C
0
1
2
3
4
5
0
1
2
3
4
5
Drain current I
D
(A)
Drain-Source ON-resistance R
DS(on)
(
)
T
C
=100C
25C
V
GS
=10V
0C
0
0
1
2
3
4
5
20
40
60
80
100
120
Drain current I
D
(A)
Switching time t
(ns
)
V
DD
=200V
V
GS
=10V
T
C
=25C
t
d(off)
t
f
t
r
t
d(on)
1
0
50
100
150
200
250
1000
100
10
3
300
30
Drain-Source voltage V
DS
(V)
Input capacitance, Output capacitance,
C
iss
, C
oss
, C
rss
(p
F
)
Feedback capacitance
f=1MHz
T
C
=25C
C
iss
C
oss
C
rss
0
0
1
2
3
4
5
1
2
3
Drain current I
D
(A)
Forward transadmittance | Y
fs
|
(S
)
V
DS
=25V
T
C
=25C
R
th
t
P
P o w e r F - M O S F E T s
2SK2538
0.1
1
10
100
1000
10
4
10
3
10
2
10
1
1
10
10
2
10
3
10
4
Pulse width t
P
(s)
Thermal resistance R
th
(C/W
)
(1)
(2)
Notes: R
th
was measured at Ta=25C
and under natural convection.
(1) P
T
=10V
0.2A(2W) and without heat sink
(2) P
T
=10V
1.0A(10W) and
with a 100
100
2mm Al heat sink
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