Transistors
1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
A
Collector to
2SC1317
V
CBO
I
C
= 10 A, I
E
= 0
30
V
base voltage
2SC1318
60
Collector to
2SC1317
V
CEO
I
C
= 10 mA, I
B
= 0
25
V
emitter voltage
2SC1318
50
Emitter to base voltage
V
EBO
I
E
= 10 A, I
C
= 0
7
V
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 10 V, I
C
= 150 mA
85
340
h
FE2
V
CE
= 10 V, I
C
= 500 mA
40
Collector to emitter saturation voltage
*1
V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA
0.35
0.6
V
Base to emitter saturation voltage
*1
V
BE(sat)
I
C
= 300 mA, I
B
= 30 mA
1.1
1.5
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
6
15
pF
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
I Features
Low collector to emitter saturation voltage V
CE(sat)
Complementary pair with 2SA719 and 2SA720
I Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector to
2SC1317
V
CBO
30
V
base voltage
2SC1318
60
Collector to
2SC1317
V
CEO
25
V
emitter voltage
2SC1318
50
Emitter to base voltage
V
EBO
7
V
Peak collector current
I
CP
1
A
Collector current
I
C
500
mA
Collector power dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
I Electrical Characteristics T
a
= 25C 3C
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
1: Emitter
2: Collector
3: Base
TO-92 Package
Unit: mm
5.0
0.2
0.7
0.1
(1.27)
1
3
2
2.54
0.15
(1.27)
2.3
0.2
0.45
+0.15
0.1
0.45
+0.15
0.1
0.7
0.2
5.1
0.2
13.5
0.5
4.0
0.2
2SC1317, 2SC1318
Transistors
2
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
0
0
160
40
120
80
140
20
100
60
200
600
400
800
100
500
300
700
Ambient temperature T
a
(
C)
Collector power dissipation P
C
(mW
)
0
20
4
8
16
12
18
2
6
14
10
0
800
700
600
500
400
300
200
100
I
B
= 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
0
10
8
6
4
2
9
7
5
3
1
0
800
700
600
500
400
300
200
100
Base current I
B
(mA)
Collector current
I
C
(mA
)
V
CE
= 10 V
T
a
= 25C
0.01
0.03
0.01
0.03
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
Collector to emitter saturation voltage
V
CE(sat)
(V
)
Collector current I
C
(A)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0.01
0.03
0.01
0.03
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
Base to emitter saturation voltage
V
BE(sat)
(V
)
Collector current I
C
(A)
I
C
/ I
B
= 10
T
a
= 75C
-25C
25
C
0
0.01
0.03
300
250
200
150
100
50
0.1
0.3
1
3
10
25
C
-25C
Forward current transfer ratio h
FE
V
CE
= 10 V
T
a
= 75C
Collector current I
C
(A)
-1
-3
-10
-2
-20
-5
-50
-30
-100
0
240
200
160
120
80
40
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
V
CB
= 10 V
T
a
= 25C
0
1
12
10
8
6
4
2
3
10
5
50
2
20 30
100
Collector output capacitance C
ob
(
pF
)
Collector to base voltage V
CB
(V)
I
E
= 0
f
= 1 MHz
T
a
= 25C
1
3
10
30
100
300
1 000
0
120
100
80
60
40
20
Collector to emitter voltage V
CER
(V
)
Base to emitter resistance R
BE
(k
)
I
C
= 2 mA
T
a
= 25C
2SC1318
2SC1317
C
ob
V
CB
V
CER
R
BE
PDF 
ZIP