1
Power Transistors
2SB1653
Silicon PNP triple diffusion planar type
For power switching
s
Features
q
High collector to emitter V
CEO
q
Low collector to emitter saturation voltage V
CE(sat)
q
Allowing automatic insertion with radial taping
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
400
400
7
1
0.5
1.5
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 400V, I
E
= 0
V
CE
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 300mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 0.2A, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 100mA,
I
B1
= 10mA, I
B2
= 10mA,
V
CC
= 150V, R
L
= 1.5k
min
400
80
10
typ
0.25
0.8
20
25
1.0
0.8
1.0
max
1
1
1
280
0.5
1.2
50
Unit
A
A
mA
V
V
V
MHz
pF
s
s
s
*
h
FE1
Rank classification
Rank
P
Q
h
FE1
80 to 160
130 to 280
Unit: mm
1:Emitter
2:Collector
3:Base
MT3 Type Package
7.5
0.2
4.5
0.2
90
0.8C
0.8C
0.4
0.1
0.8C
1
2
3
0.5
0.1
0.7
0.1
1.0
0.1
0.85
0.1
0.65
0.1
0.7
0.1
2.5
0.1
10.8
0.2
16.0
1.0
3.8
0.2
2.5
0.2
2.5
0.2
2.05
0.2
2
Power Transistors
2SB1653
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
2.0
1.6
1.2
0.8
0.4
Without heat sink
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
480
400
320
240
160
80
Ta=25C
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
I
B
=10mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
1
10
100
1000
0.001
0.01
0.1
1
10
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
0
240
200
160
120
80
40
V
CE
=5V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
10
100
0
60
50
40
30
20
10
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
PDF 
ZIP