1
Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419
s
Features
q
High collector to emitter voltage V
CEO
.
s
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
200
200
5
0.1
70
1
150
55 ~ +150
Unit
V
V
V
A
mA
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 100
A, I
B
= 0
I
E
= 1
A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 5V, I
E
= 10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
200
5
30
typ
30
7
max
150
2.5
Unit
V
V
V
MHz
pF
Unit: mm
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
0.1
4.5
0.1
14.5
0.5
2.5
0.5
2.5
0.5
2.5
0.1
6.9
0.1
1.05
0.05
(1.45)
4.0
0.7
0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
0.05
0.45
+0.1
0.05
3
2
1
*1
h
FE
Rank classification
Rank
P
Q
h
FE
30 ~ 100
60 ~ 150
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2
0.1
0.65
max.
0.45
0.1
0.05
+
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
2
Transistor
2SA1961
0
160
40
120
80
140
20
100
60
0
2.0
1.6
1.2
0.8
0.4
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
120
100
80
60
40
20
Ta=25C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
I
B
=1.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
1.2
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0
240
180
60
150
210
120
30
90
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
3
10
30
100
0
24
20
16
12
8
4
f=1MHz
I
E
=0
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
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