LATB T683
Hyper Multi TOPLED
Hyper-Bright LED
Abgekndigt nach PD_078_02 - wird durch
LATB T66B ersetzt werden
Obsolete acc. to PD_078_02 - will be replaced by
LATB T66B
2003-08-04
1
Besondere Merkmale
Gehusetyp: weies P-LCC-4 Gehuse;
Kontrasterhhung durch schwarze Oberflche
(RGB-Displays)
Besonderheit des Bauteils: additive
Farbmischung durch unabhngige Ansteuerung
aller Chips
Wellenlnge: 617 nm (amber),
528 nm (true green), 470 nm (blau)
Abstrahlwinkel: Lambertscher Strahler (120)
Technologie: InGaAlP (amber),
InGaN (true green, blau)
optischer Wirkungsgrad: 11 lm/W (amber),
8 lm/W (true green), 2 lm/W (blau)
Gruppierungsparameter: Lichtstrke
Verarbeitungsmethode: fr alle
SMT-Bestcktechniken geeignet
Ltmethode: IR Reflow Lten und
Wellenlten (TTW)
Vorbehandlung: nach JEDEC Level 2
Gurtung: 8 mm Gurt mit 2000/Rolle, 180 mm
oder 8000/Rolle, 330 mm
ESD-Festigkeit: ESD-sicher bis 2 kV nach
EOS/ESD-5.1-1993
Anwendungen
Anzeigen im Innen- und Auenbereich
(z.B. Grafikdisplays)
Leuchtdiodenchips getrennt ansteuerbar
Vollfarbdisplays bzw. RGB-Displays
Hinterleuchtung (LCD, Schalter, Tasten,
Displays, Werbebeleuchtung,
Allgemeinbeleuchtung)
Einkopplung in Lichtleiter
Features
package: white P-LCC-4 package;
higher contrast by a black surface
(RGB-Displays)
feature of the device: additive mixture of color
stimuli by independent driving of each chip
wavelength: 617 nm (amber),
528 nm (true green), 470 nm (blue)
viewing angle: Lambertian Emitter (120)
technology: InGaAlP (amber),
InGaN (true green, blue)
optical efficiency: 11 lm/W (amber),
8 lm/W (true green), 2 lm/W (blue)
grouping parameter: luminous intensity
assembly methods: suitable for all
SMT assembly methods
soldering methods: IR reflow soldering and
TTW soldering
preconditioning: acc. to JEDEC Level 2
taping: 8 mm tape with 2000/reel, 180 mm
or 8000/reel, 330 mm
ESD-withstand voltage: up to 2 kV acc. to
EOS/ESD-5.1-1993
Applications
indoor and outdoor displays (e.g. graphic
displays)
LED chips can be controlled separately
full color displays, RGB-Displays
backlighting (LCD, switches, keys, displays,
illuminated advertising, general lighting)
coupling into light guides
2003-08-04
2
LATB T683
Helligkeitswerte werden mit einer Stromeinprgedauer von 25 ms und einer Genauigkeit von 11 % ermittelt.
Luminous intensity is tested at a current pulse duration of 25 ms and a tolerance of 11 %.
s
Abgekndigt nach PD_078_02 - wird durch LATB T66B ersetzt werden
Obsolete acc. to PD_078_02 - will be replaced by LATB T66B
Letzte Bestellung / Last Order: 30.09.2003
Letzte Lieferung / Last Delivery: 31.03.2004
Anm.: Die Standardlieferform von Serientypen beinhaltet eine Familiengruppe. Einzelne Gruppen sind
nicht erhltlich.
In einer Verpackungseinheit / Gurt ist immer nur eine Gruppe pro Farbe enthalten.
Note: The standard shipping format for serial types includes a family group. Individual groups are not
available.
No packing unit / tape ever contains more than one luminous intensity group per color.
Typ
Type
Emissions
-farbe
Color of
Emission
Farbe der
Lichtaustritts-
flche
Color of the
Light Emitting
Area
Lichtstrke
Luminous Intensity
I
F
= 20 mA
I
V
(mcd)
Bestell-
nummer
Ordering
Code
amber
true green
blue
s
LATB T683
Q+R+M
Q+R+N
Q+S+M
Q+S+N
R+R+M
R+R+N
R+S+M
R+S+N
amber
true green
blue
colorless clear
and
black painted
package
surface
71 ... 180
71 ... 112
71 ... 112
71 ... 112
71 ... 112
112 ... 180
112 ... 180
112 ... 180
112 ... 180
112 ... 280
112 ... 180
112 ... 180
180 ... 280
180 ... 280
112 ... 180
112 ... 180
180 ... 280
180 ... 280
18 ... 45
18 ... 28
28 ... 45
18 ... 28
28 ... 45
18 ... 28
28 ... 45
18 ... 28
28 ... 45
Q62703Q5976
LATB T683
2003-08-04
3
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LA
LT
LB
Betriebstemperatur
Operating temperature range
T
op
40 ... + 100
C
Lagertemperatur
Storage temperature range
T
stg
40 ... + 100
C
Sperrschichttemperatur
Junction temperature
T
j
+ 125
+ 125
+ 110
C
Durchlassstrom
Forward current
I
F
30
20
20
mA
Stostrom
Surge current
t
p
= 10
s,
D
= 0.005
I
FM
1.00
0.25
0.20
A
Sperrspannung
1)
Reverse voltage
V
R
12
5
5
V
Leistungsaufnahme
Power consumption
P
tot
80
80
80
mW
Wrmewiderstand
Thermal resistance
Sperrschicht/Umgebung
1 chip on
Junction/ambient
3 chips on
Sperrschicht/Ltpad
1 chip on
Junction/solder point
3 chips on
Montage auf PC-Board FR 4 (Padgre
16 mm
2
)
mounted on PC board FR 4 (pad size
16 mm
2
)
R
th JA
R
th JA
R
th JS
R
th JS
580
825
340
490
480
770
260
420
480
770
260
420
K/W
K/W
K/W
K/W
1)
fr kurzzeitigen Betrieb geeignet / suitable for short term application
2003-08-04
4
LATB T683
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LA
LT
LB
Wellenlnge des emittierten Lichtes
(typ.)
Wavelength at peak emission
I
F
= 20 mA
peak
622
523
465
nm
Dominantwellenlnge
1)
(typ.)
Dominant wavelength
1)
I
F
= 20 mA
dom
617
5
528
9
470
6
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
I
F
= 20 mA
16
33
25
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
(typ.)
Viewing angle at 50 %
I
V
2
120
120
120
Grad
deg.
Durchlassspannung
2)
(min.)
Forward voltage
(typ.)
I
F
= 20 mA
(max.)
V
F
V
F
V
F
2.0
2.4
2.9
3.5
3.9
2.9
3.3
3.9
V
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V (blue / true green); 12 V (amber)
I
R
I
R
0.01
10
0.01
10
0.01
10
A
A
Temperaturkoeffizient von
peak
(typ.)
Temperature coefficient of
peak
I
F
= 20 mA; 10C
T
100C
TC
peak
0.13
0.04
0.04
nm/K
Temperaturkoeffizient von
dom
(typ.)
Temperature coefficient of
dom
I
F
= 20 mA; 10C
T
100C
TC
dom
0.06
0.03
0.02
nm/K
Temperaturkoeffizient von
V
F
(typ.)
Temperature coefficient of
V
F
I
F
= 20 mA; 10C
T
100C
TC
V
1.8
3.6
2.9
mV/K
Optischer Wirkungsgrad
(typ.)
Optical efficiency
I
F
= 20 mA
opt
11
8
2
lm/W
1)
Wellenlngen werden mit einer Stromeinprgedauer von 25 ms und einer Genauigkeit von 1 nm ermittelt.
Wavelengths are tested at a current pulse duration of 25 ms and a tolerance of 1 nm.
2)
Durchlassspannungsgruppen werden mit einer Stromeinprgedauer von 1 ms und einer Genauigkeit von 0,05 V
ermittelt.
Forward voltage groups are tested at a current pulse duration of 1 ms and a tolerance of 0.05 V.
LATB T683
2003-08-04
5
Relative spektrale Emission
I
rel
=
f
(
),
T
A
= 25 C,
I
F
= 20 mA
Relative Spectral Emission
V(
) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik
I
rel
=
f
(
)
Radiation Characteristic
0
350
nm
OHL01452
I
20
40
60
80
%
100
rel
blue
400
450
500
550
600
650
700
true green
V
amber
0
0.2
0.4
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0
10
20
40
30
OHL01660
50
60
70
80
90
100
0
20
40
60
80
100
120
LATB T683
2003-08-04
6
Durchlassstrom
I
F
=
f
(
V
F
)
Forward Current
T
A
= 25 C
Durchlassstrom
I
F
=
f
(
V
F
)
Forward Current
T
A
= 25 C
Relative Lichtstrke
I
V
/
I
V(20 mA)
=
f
(
I
F
)
Relative Luminous Intensity
T
A
= 25 C
Relative Lichtstrke
I
V
/
I
V(25 C)
=
f
(
T
A
)
Relative Luminous Intensity
I
F
= 20 mA
10
-1
V
OHL00660
mA
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
3.2
10
0
10
1
10
2
amber
5
5
F
I
F
V
OHL01467
I
F
3.5
2
3
2.5
5
V
4.5
4
V
F
5
mA
10
2
10
-1
5
10
0
5
10
1
true green
blue
V
V (20 mA)
10
-1
0
10
10
1
2
10
mA
OHL01450
F
I
I
I
5
5
-2
10
5
10
-1
5
10
1
10
0
true green
amber
blue,
OHL01466
A
T
(25 C)
I
V
I
V
0
0
20
40
60
80 C 100
0.2
0.4
0.6
0.8
1.2
true green, blue
amber
LATB T683
2003-08-04
7
Maximal zulssiger Durchlassstrom
I
F
=
f
(
T
)
Max. Permissible Forward Current
1 chip on
Maximal zulssiger Durchlassstrom
I
F
=
f
(
T
)
Max. Permissible Forward Current
1 chip on
Maximal zulssiger Durchlassstrom
I
F
=
f
(
T
)
Max. Permissible Forward Current
3 chips on
Maximal zulssiger Durchlassstrom
I
F
=
f
(
T
)
Max. Permissible Forward Current
3 chips on
true
green
C
OHL00119
30
5
0
0
10
10 20
60
40 50
70 80
T
blue
mA
15
20
I
F
25
30
35
amber
100
temp. solder point
S
true
green
C
OHL00137
30
5
0
0
10
10 20
60
40 50
70 80
T
blue
mA
15
20
I
F
25
30
35
amber
100
temp. ambient
A
OHL00120
0
0
C
mA
10 20 30 40 50 60 70 80
100
5
10
15
20
25
30
35
amber
blue
temp. solder point
S
F
I
T
true
green
true
green
C
OHL00138
30
5
0
0
10
10 20
60
40 50
70 80
T
blue
mA
15
20
I
F
25
30
35
amber
100
temp. ambient
A
LATB T683
2003-08-04
8
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 25 C
amber (1 Chip on)
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 25 C
amber (3 Chips on)
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 85 C
amber (1Chip on)
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 85 C
amber (3 Chips on)
0.05
0
2
1
-2
-3
-4
-5
-1
10
10
10
10
10
10
10
10
s
0.2
0.1
0.005
0.02
0.01
A
OHL00128
0.5
-2
10
10
10
0
p
t
I
F
D
=
P
D
T
P
t
=
t
T
F
I
-1
0.05
0
2
1
-2
-3
-4
-5
-1
10
10
10
10
10
10
10
10
s
0.2
0.1
0.005
0.02
0.01
A
OHL00130
0.5
-2
10
10
10
0
p
t
I
F
D
=
P
D
T
P
t
=
t
T
F
I
-1
0.05
0
2
1
-2
-3
-4
-5
-1
10
10
10
10
10
10
10
10
s
0.2
0.1
0.005
0.02
0.01
A
OHL00124
0.5
-2
10
10
-1
10
0
p
t
I
F
D
=
t
T
P
T
P
t
I
F
D
=
0.05
0
2
1
-2
-3
-4
-5
-1
10
10
10
10
10
10
10
10
s
0.2
0.1
0.005
0.02
0.01
A
OHL00126
0.5
-2
10
10
10
0
p
t
I
F
D
=
t
T
P
T
P
t
I
F
D
=
-1
LATB T683
2003-08-04
9
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 25 C
true green (1 Chip on)
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 25 C
true green (3 Chips on)
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 85 C
true green (1 Chip on)
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 85 C
true green (3 Chips on)
P
-1
-5
10
0
-4
-3
-2
10
10
10
10
I
F
A
D
P
T
t
=
t
1
2
0
s
10
t
10
p
10
0.05
0.5
0.1
0.2
0.02
OHL00127
D
0.01
0.005
=
T
F
I
0.05
0.10
0.15
0.20
0.25
0.30
0.35
-3
-4
-5
10
10
10
0
2
1
0
-1
-2
10
10
10
t
p
10
10
s
0.2
0.5
0.005
0.1
0.02
0.05
0.01
D
=
D
I
F
t
T
=
P
T
P
t
OHL00129
I
F
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
A
0.22
P
-1
-5
10
0
-4
-3
-2
10
10
10
10
I
F
A
D
P
T
t
=
t
0.05
1
2
0
s
10
t
10
p
10
0.5
0.1
0.2
OHL00123
D
0.01
0.02
0.005
=
T
F
I
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.12
-1
P
-5
10
0
-2
-3
-4
10
10
10
10
I
F
A
D
T
P
t
=
t
0
2
1
s
10
10
t
p
10
0.02
0.2
0.1
0.5
0.05
OHL00125
0.005
0.01
D
=
T
F
I
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
LATB T683
2003-08-04
10
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 25 C
blue (1 Chip on)
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 25 C
blue (3 Chips on)
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 85 C
blue (1 Chip on)
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible Pulse Handling Capability
Duty cycle
D
= parameter,
T
A
= 85 C
blue (3 Chips on)
OHL01405
0
F
I
10
10
-5
-4
-3
10
10
-2
10
-1
10
0
s
10
1
10
2
p
t
0.05
0.10
0.15
0.20
0.25
0.30
0.05
0.5
0.2
0.1
D
0.02
0.01
0.005
=
A
D
T
t
=
P
t
T
P
I
F
0.05
0
2
1
-2
-3
-4
-5
-1
10
10
10
10
10
10
10
10
s
0
0.2
0.1
0.005
0.02
0.01
A
OHL00132
0.5
F
I
p
t
P
D
T
P
t
=
t
T
F
I
D
=
0.05
0.10
0.15
0.20
0.25
0.30
0.05
0
2
1
-2
-3
-4
-5
-1
10
10
10
10
10
10
10
10
s
0
0.2
0.1
0.005
0.02
0.01
A
OHL00131
0.5
F
I
p
t
P
D
T
P
t
=
t
T
F
I
D
=
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.10
0.05
0
2
1
-2
-3
-4
-5
-1
10
10
10
10
10
10
10
10
s
0
0.2
0.1
0.005
0.02
0.01
A
OHL00136
0.5
F
I
p
t
P
D
T
P
t
=
t
T
F
I
D
=
0.01
0.02
0.03
0.04
0.05
0.06
0.07
LATB T683
2003-08-04
11
Die Farbkoordinaten des Mischlichtes knnen innerhalb des mit a) gekennzeichneten Bereichs des Farbdreiecks
erwartet werden.
Der Unbuntpunkt (x = 0,33, y = 0,33) ist mit ,,+" gekennzeichnet.
The color coordinates of the mixed light can be expected within the area of the color triangle marked a).
The achromatic point (x = 0.33, y = 0.33) is marked ,,+".
OHL01447
b)
+
520
530
540
550
560
570
580
590
600
610
620
630
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
a)
2003-08-04
12
LATB T683
Mazeichnung
Package Outlines
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Gewicht / Approx. weight: 35 mg
1
4
2
3
Package marking
GPLY6900
2.6 (0.102)
2.1 (0.083)
2.3 (0.091)
3.0 (0.118)
0.8 (0.031)
0.6 (0.024)
3.0 (0.118)
3.4 (0.134)
(2.4 (0.094))
3.3 (0.130)
3.7 (0.146)
0.5 (0.020)
1.1 (0.043)
0.1 (0.004) typ
4
1
0.18 (0.007)
0.4 (0.016)
0.6 (0.024)
1.7 (0.067)
2.1 (0.083)
0.9 (0.035)
0.7 (0.028)
C
A
C
C
Circuit Diagram
1
Cathode
Amber (A)
2
Anode
A, T, B
3
Cathode
Blue (B)
4
Cathode
True Green (T)
LATB T683
2003-08-04
13
Ltbedingungen
Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
IR-Reflow Ltprofil
(nach IPC 9501)
IR Reflow Soldering Profile
(acc. to IPC 9501)
OHLY0597
0
0
50
100
150
200
250
50
100
150
200
250
300
T
t
C
s
240-245 C
10-40 s
183 C
120 to 180 s
Defined for Preconditioning: up to 6 K/s
Ramp-down rate up to 6 K/s
Ramp-up rate up to 6 K/s
Defined for Preconditioning: 2-3 K/s
2003-08-04
14
LATB T683
Wellenlten (TTW)
(nach CECC 00802)
TTW Soldering
(acc. to CECC 00802)
OHLY0598
0
0
50
100
150
200
250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C
... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s
2 K/s
ca 200 K/s
C
C
... 130
100
2 K/s
Zwangskhlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
LATB T683
2003-08-04
15
Empfohlenes Ltpaddesign
IR Reflow Lten
Recommended Solder Pad
IR Reflow Soldering
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
OHLPY439
Padgeometrie fr
verbesserte Wrmeableitung
improved heat dissipation
Paddesign for
Ltstoplack
Solder resist
1.1 (0.043)
4.5 (0.177)
1.5 (0.059)
2.6 (0.102)
3.3 (0.130)
0.5 (0.020)
7.5 (0.295)
0.4 (0.016)
Cathode marking
Kathoden Markierung /
Cu Flche / 12 mm per pad
2
Cu-area
_
<
3.3 (0.130)
2003-08-04
16
LATB T683
Empfohlenes Ltpaddesign
Wellenlten (TTW)
Recommended Solder Pad
TTW Soldering
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Gurtung / Polaritt und Lage
Verpackungseinheit 2000/Rolle, 180 mm
oder 8000/Rolle, 330 mm
Method of Taping / Polarity and Orientation Packing unit 2000/reel, 180 mm
or 8000/reel, 330 mm
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
OHAY0583
6.1 (0.240)
2.8 (0.110)
2 (0.079)
3 (0.118)
6 (0.236)
3.5 (0.138)
1.5 (0.059)
2 (0.079)
3.5 (0.138)
1 (0.039)
8 (0.315)
2.8 (0.110)
0.5 (0.020)
7.5 (0.295)
Solder resist
Ltstoplack
PCB-direction
Bewegungsrichtung
der Platine
2 (0.079)
Padgeometrie fr
improved heat dissipation
verbesserte Wrmeableitung
Paddesign for
2
Cu Flche / > 12 mm per pad
Cu-area
OHAY0095
4 (0.157)
2.9 (0.114)
1.5 (0.059)
4 (0.157)
3.6 (0.142)
3.5 (0.138)
2 (0.079)
1.75 (0.069)
8 (0.315)
C
A
C
C
LATB T683
2003-08-04
17
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
All typical data and graphs are basing on representative samples, but don't represent the production range. If requested,
e.g. because of technical improvements, these typ. data will be changed without any further notice.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
If printed or downloaded, please find the latest version in the Internet.
Packing
Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component used in a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or
system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
Revision History: 2003-08-04
Date of change
Previous Version:
2003-07-18
Page
Subjects (major changes since last revision)
4
value (wavelength amber)
1
ESD-withstand voltage
3
power consumption from 85 mW to 80 mW
17
annotations
2002-07-23
3
reverse voltage (footnote) + amber from 3 V to 5 V
2002-08-21
all
not for new designs
2002-11-18
1, 2
Obsolete
2003-08-04
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