Fea tures
Non-contact switching
Printed circuit board mounting
0.375" (9.53 mm) wide slot
0.430" (10.92 mm) deep slot
De scrip tion
The OPB815L consists of an infrared
emitting diode and an NPN silicon
phototransistor mounted in a low cost
plastic housing on opposite sides of a
0.375" (9.53 mm) wide, 0.430" (10.92
mm) deep slot. Phototransistor switching
takes place whenever an opaque object
passes through the slot. Available with
wire leads as OPB815W.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Stor age and Op er at ing Tem pera ture . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
o
C
(1)
In put Di ode
Con tinu ous For ward Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur rent (1
s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Re verse Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Out put Pho to tran sis tor
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max when flow soldering.
(2) Derate linearly 1.67 mW/
o
C above 25
o
C.
(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in
chlorinated hydrocarbons and ketones.
(4) All parameters tested using pulse technique.
Prod uct Bul le tin OPB815L
July 1997
Deep Gap Slot ted Op ti cal Switch
Type OPB815L
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
12-80
Type OPB815L
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAME TER
MIN MAX UNITS
TEST CON DI TIONS
In put Di ode
V
F
Forward Voltage
1.70
V
I
F
= 20 mA
I
R
Reverse Current
100
A
V
R
= 2.0 V
Out put Pho to tran sis tor
V
(BR)CEO
Collector-Emitter Breakdown Voltage
30
V
I
C
= 1.00 mA
V
(BR)ECO
Emitter-Collector Breakdown Voltage
5.0
V
I
E
= 100
A
I
CEO
Collector-Emitter Dark Current
100
nA
V
CE
= 10.0 V, I
F
= 0, E
e
= 0
Cou pled
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.40
V
I
C
= 500
A, I
F
= 20 mA
I
C(ON)
On-State Collector Current
3.5
16.0
mA
V
CE
= 10.0 V, I
F
= 20 mA
Typi cal Per form ance Curves
Normalized I
C(ON)
vs
Distance (Y Axis Blocked)
Distance - inches
Typical
Normalized I
C(ON)
vs
Distance (X Axis Blocked)
Distance - inches
Typical
Collector Current vs LED Drive
I
F
- mA
Typical
12-81
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