Fea tures
Very high speed
Enhanced temperature range
Wide irradiance pattern
Mechanically and spectrally matched
to the OP800WSL and OP830SL
series devices
Significantly higher power output than
GaAs at equivalent drive currents
TO-46 hermetically sealed package
Case is electrically connected to the
cathode
De scrip tion
The OP234W device is an 850 nm
gallium aluminum arsenide infrared
emitting diodes mounted in hermetically
sealed packages. The broad irradiance
pattern provides relatively even
illumination over a large area.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Con tinu ous For ward Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Peak For ward Cur rent (2
s pulse width, 0.1% duty cy cle) . . . . . . . . . . . . . . . . 10.0 A
Stor age Tem pera ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +125
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow
soldering.
(2) Derate linearly 2.0 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average radiant intensity emitted by the IRED within a cone
formed from the IRED chip to an aperture. The aperture of diameter 0.250" is located a
distance of 0.466" from the flange (measurement plane) to the aperture plane (parallel to the
measurement plane) along the optical and mechanical axis. The cone formed is a 30
cone.
The radiant intensity is not necessarily uniform within the measured area.
(4) Measurement made with 100
s pulse measured at the trailing edge of the pulse with a duty
cycle of 0.1% and an I
F
= 100 mA.
Prod uct Bul le tin OP234W
P R E L I M I N A R Y
July 2001
GaA lAs Her metic In fra red Emit ting Di odes
Type OP234W
Type OP234W
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAME TER
MIN TYP MAX
UNITS
TEST CON DI TIONS
E
e(APT)
Apertured Radiant Incidence
5.0
--
mW/cm
2
I
F
= 100 mA
(3)(4)
P
O
Power Output
17
mW
I
F
= 100 mA
V
F
Forward Voltage
2.0
V
I
F
= 100 mA
(4)
I
R
Reverse Current
100
A
V
R
= 2.0 V
p
Wavelength at Peak Emission
850
nm
I
F
= 10 mA
B
Spectral Bandwidth Half Power Points
50
nm
I
F
= 10 mA
P
/
T
Spectral Shift with Temperature
+0.30
nm/
o
C
I
F
= Constant
HP
Emission Angle at Half Power Points
60
Deg.
I
F
= 100 mA
t
r
Rise Time
15
ns
I
F(PK)
= 100 mA,
PW = 10
s, D.C. = 10%
t
f
Fall Time
10
ns
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