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3401
Motorola Bipolar Power Transistor Device Data
SWITCHMODE II Series
NPN Silicon Power Transistors
The BUX 48/BUX 48A transistors are designed for highvoltage, highspeed,
power switching in inductive circuits where fall time is critical. They are particularly
suited for lineoperated SWITCHMODE applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast TurnOff Times
60 ns Inductive Fall Time -- 25
_
C (Typ)
120 ns Inductive Crossover Time -- 25
_
C (Typ)
Operating Temperature Range 65 to + 200
_
C
100
_
C Performance Specified for:
ReverseBiased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125
_
C)
MAXIMUM RATINGS
Rating
Symbol
BUX48
BUX48A
Unit
CollectorEmitter Voltage
VCEO(sus)
400
450
Vdc
CollectorEmitter Voltage (VBE = 1.5 V)
VCEX
850
1000
Vdc
Emitter Base Voltage
VEB
7
Vdc
Collector Current -- Continuous
-- Peak (1)
-- Overload
IC
ICM
IOI
15
30
60
Adc
Base Current -- Continuous
-- Peak (1)
IB
IBM
5
20
Adc
Total Power Dissipation -- TC = 25
_
C
-- TC = 100
_
C
Derate above 25
_
C
PD
175
100
1
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
from Case for 5 Seconds
TL
275
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
SWITCHMODE is a trademark of Motorola, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUX48/D
Motorola, Inc. 1995
BUX48
BUX48A
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
V(BR)CEO
850 1000 VOLTS
V(BR)CEX
175 WATTS
CASE 107
TO204AA
(TO3)
REV 7
BUX48 BUX48A
3402
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
CollectorEmitter Sustaining Voltage (Table 1)
(IC = 200 mA, IB = 0) L = 25 mH
BUX48
BUX48A
VCEO(sus)
400
450
--
--
--
--
Vdc
Collector Cutoff Current
(VCEX = Rated Value, VBE(off) = 1.5 Vdc)
(VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125
_
C)
ICEX
--
--
--
--
0.2
2
mAdc
Collector Cutoff Current
(VCE = Rated VCEX, RBE = 10
)
TC = 25
_
C
TC = 125
_
C
ICER
--
--
--
--
0.5
3
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
--
--
0.1
mAdc
EmitterBase Breakdown Voltage
(IE = 50 mA IC = 0)
V(BR)EBO
7
--
--
Vdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 12
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 13
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 5 Vdc)
BUX48
(IC = 8 Adc, VCE = 5 Vdc)
BUX48A
hFE
8
8
--
--
--
--
CollectorEmitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc)
(IC = 15 Adc, IB = 3 Adc)
BUX48
(IC = 10 Adc, IB = 2 Adc, TC = 100
_
C)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 12 Adc, IB = 2.4 Adc)
BUX48A
(IC = 8 Adc, IB = 1.6 Adc, TC = 100
_
C)
VCE(sat)
--
--
--
--
--
--
--
--
--
--
--
--
1.5
5
2
1.5
5
2
Vdc
BaseEmitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc)
BUX48
(IC = 10 Adc, IB = 2 Adc, TC = 100
_
C)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100
_
C)
BUX48A
VBE(sat)
--
--
--
--
--
--
--
--
1.6
1.6
1.6
1.6
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
--
--
350
pF
SWITCHING CHARACTERISTICS Resistive Load (Table 1)
Delay Time
IC = 10 A, IB = 2 A
BUX48
IC = 8 A, IB = 1.6 A
BUX48A
Duty Cycle = 2%, VBE(off) = 5 V
Tp = 30
s, VCC = 300 V
td
--
0.1
0.2
s
Rise Time
IC = 10 A, IB = 2 A
BUX48
IC = 8 A, IB = 1.6 A
BUX48A
Duty Cycle = 2%, VBE(off) = 5 V
Tp = 30
s, VCC = 300 V
tr
--
0.4
0.7
Storage Time
IC = 8 A, IB = 1.6 A
BUX48A
Duty Cycle = 2%, VBE(off) = 5 V
Tp = 30
s, VCC = 300 V
ts
--
1.3
2
Fall Time
Tp = 30
s, VCC = 300 V
tf
--
0.2
0.4
Inductive Load, Clamped (Table 1)
Storage Time
IC = 10 A
IB1 = 2 A
BUX48
(TC = 25
_
C)
tsv
--
1.3
--
s
Fall Time
IC = 10 A
IB1 = 2 A
BUX48
(TC = 25
_
C)
tfi
--
0.06
--
Storage Time
IC = 8 A
IB1 = 1.6 A
BUX48A
(TC = 100
_
C)
tsv
--
1.5
2.5
Crossover Time
IC = 8 A
IB1 = 1.6 A
BUX48A
(TC = 100
_
C)
tc
--
0.3
0.6
Fall Time
IB1 = 1.6 A
BUX48A
_
C)
tfi
--
0.17
0.35
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2%.
Vcl = 300 V, VBE(off) = 5 V, Lc = 180
H
BUX48 BUX48A
3403
Motorola Bipolar Power Transistor Device Data
C, CAP
ACIT
ANCE (pF)
, COLLECT
OR CURRENT
(
A)
I C
V
BE
, BASEEMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.1
IC, COLLECTOR CURRENT (AMPS)
0.3
3
2
1
0.7
0.5
5
IC, COLLECTOR CURRENT (AMPS)
3
2
1
0.7
0.5
0.3
0.2
0.3
IC = 5 A
50
1
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1
2
3
5
8 10
20
30
50
20
10
7
Figure 2. Collector Saturation Region
0.1
IB, BASE CURRENT (AMPS)
0.1
0.3
0.5
3
0.5
0.3
30
h
FE
, DC CURRENT
GAIN
5
3
2
VCE = 5 V
1
2
3
4
Figure 3. CollectorEmitter Saturation Voltage
10
1
1
2
3
7
10
50
20
30
5
Figure 4. BaseEmitter Voltage
Figure 5. Collector Cutoff Region
10
5
1
0.4
Figure 6. Capacitance
VBE, BASEEMITTER VOLTAGE (VOLTS)
101
0.2
0
0.2
0.4
0.6
10 k
1
VR, REVERSE VOLTAGE (VOLTS)
10
10
1 k
100
100
1000
100
FORWARD
0.1
VCE = 250 V
125
C
90%
75
C
7.5 A
TC = 25
C
TJ = 25
C
TJ = 100
C
REVERSE
101
102
103
104
Cib
f = 5
10%
10 A
15 A
90%
10%
TJ = 150
C
100
C
25
C
Cob
TJ = 25
C
DC CHARACTERISTICS
BUX48 BUX48A
3404
Motorola Bipolar Power Transistor Device Data
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
INPUT
CONDITIONS
CIRCUIT
V
ALUES
TEST CIRCUITS
20
1
0
PW Varied to Attain
IC = 200 mA
Lcoil = 25 mH, VCC = 10 V
Rcoil = 0.7
Lcoil = 180
H
Rcoil = 0.05
VCC = 20 V
VCC = 300 V
RL = 83
Pulse Width = 10
s
INDUCTIVE TEST CIRCUIT
TURNON TIME
IB1 adjusted to
obtain the forced
hFE desired
TURNOFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
t1 Adjusted to
Obtain IC
Test Equipment
Scope -- Tektronix
475 or Equivalent
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
2
IB1
1
2
Vclamp = 300 V
RB ADJUSTED TO ATTAIN DESIRED IB1
+10 V
220
100
680 pF
100
PULSES
= 3%
33
2 W
33
2 W
160
D1
22
F
D3
22
680 pF
MM3735
1N4934
D1 D2 D3 D4
2N3763
160
680 pF
22
D4
0.22
F
D3
2N6438
+10 V
MR854
0.1
F
2N6339
MR854
Ib1 ADJUST
dTb ADJUST
Ib2 ADJUST
VCC
t1
IC
VCE
IC(pk)
tf Clamped
tf
t
t
t2
TIME
VCE or
Vclamp
1
2
TUT
RL
VCC
t1
Lcoil (IC
pk
)
VCC
t2
Lcoil (IC
pk
)
VClamp
1
INPUT
2
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
VBE(off), BASEEMITTER VOLTAGE (VOLTS)
Figure 7. Inductive Switching Measurements
Figure 8. PeakReverse Current
1
2
3
4
5
6
10
8
6
4
2
0
, BASE CURRENT
(AMPS)
I B2(pk)
0
f = 5
IC = 10 A
trv
TIME
IC
VCE
90% IB1
tsv
IC pk
VCE(pk)
90% VCE(pk)
90% IC(pk)
10% VCE(pk) 10%
IC pk
2% IC
IB
tfi
tti
tc
BUX48 BUX48A
3405
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 1090% Vclamp
tfi = Current Fall Time, 9010% IC
tti = Current Tail, 102% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi
]
tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
_
C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a "SWITCHMODE" transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100
_
C.
1
Figure 9. Storage Time, tsv
IC, COLLECTOR CURRENT (AMPS)
2
5
0.1
Figure 10. Crossover and Fall Times
5
3
1
0.7
0.5
50
IC, COLLECTOR CURRENT (AMPS)
3
7
0
Figure 11a. TurnOff Times versus Forced Gain
f, FORCED GAIN
0.01
1
2
4
5
2
0.5
0.3
0.2
Figure 11b. TurnOff Times versus Ib2/Ib1
Ib2/Ib1
3
1
0.1
3
TC = 25
C
IC = 10 A
VBE(off) = 5 V
0.01
1
0.5
0.2
0.3
0.1
t,
TIME (
s)
2
0.3
0.2
20
10
30
f = 5
t,
TIME (
s)
0.05
0.02
0.03
1
2
5
50
3
7
20
10
30
f = 5
tc
tfi
0.05
0.03
0.02
6
8
9
7
10
tsv
tfi
tc
t,
TIME (
s)
0.01
2
0.5
0.3
0.2
3
1
0.1
0.05
0.03
0.02
0
1
2
4
5
3
6
8
9
7
10
TC = 25
C
IC = 10 A
f = 5
tsv
tfi
tc
TC = 25
C
TC = 100
C
TC = 100
C
TC = 100
C
TC = 25
C
TC = 25
C
INDUCTIVE SWITCHING
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