Semiconductor Components Industries, LLC, 2002
June, 2002 Rev. 2
1
Publication Order Number:
1N6373/D
1N6373 - 1N6381 Series
(ICTE-5 - ICTE-36,
MPTE-5 - MPTE-45)
1500 Watt Peak Power
Mosorb
TM
Zener Transient
Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, highenergy transients. They have
excellent clamping capability, high surge capability, low zener
i m p e d a n c e a n d f a s t r e s p o n s e t i m e . T h e s e d e v i c e s a r e
ON Semiconductor's exclusive, cost-effective, highly reliable
Surmetic
TM
axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
Working Peak Reverse Voltage Range 5 V to 45 V
Peak Power 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA Above 10 V
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230
C, 1/16
from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.)
@ T
L
25
C
P
PK
1500
Watts
Steady State Power Dissipation
@ T
L
75
C, Lead Length = 3/8
Derated above T
L
= 75
C
P
D
5.0
20
Watts
mW/
C
Thermal Resistance, JunctiontoLead
R
q
JL
20
C/W
Forward Surge Current (Note 2.)
@ T
A
= 25
C
I
FSM
200
Amps
Operating and Storage
Temperature Range
T
J
, T
stg
65 to
+175
C
*Please see 1N6382 1N6389 (ICTE10C ICTE36C, MPTE8C MPTE45C)
for Bidirectional Devices
AXIAL LEAD
CASE 41A
PLASTIC
L = Assembly Location
MPTExx = ON Device Code
ICTExx = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
WW = Work Week
Cathode
Anode
Device
Package
Shipping
ORDERING INFORMATION
MPTExx
Axial Lead
500 Units/Box
MPTExxRL4
Axial Lead
1500/Tape & Reel
ICTExx
Axial Lead
500 Units/Box
ICTExxRL4
Axial Lead
1500/Tape & Reel
NOTES:
L
ICTE
xx
YYWW
1N63xx
Axial Lead
500 Units/Box
1N63xxRL4*
Axial Lead
1500/Tape & Reel
L
MPTE
xx
1N
63xx
YYWW
1. Nonrepetitive current pulse per Figure 5 and der-
ated above T
A
= 25
C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW =
8.3 ms, duty cycle = 4 pulses per minute maxi-
mum.
http://onsemi.com
*1N6378 Not Available in 1500/Tape & Reel
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3.) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
Q
V
BR
Maximum Temperature Variation of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3.)
= 100 A)
V
RWM
I
R
@
Breakdown Voltage
V
C
@ I
PP
(Note 6.)
V
C
(Volts) (Note 6.)
JEDEC
Device
Device
V
RWM
(Note 4.)
I
R
@
V
RWM
V
BR
(Note 5.
)
(Volts)
@ I
T
V
C
I
PP
@ I
PP
=
@ I
PP
=
Q
V
BR
Device
(ON Device)
Device
Marking
(Volts)
(
m
A)
Min
Nom
Max
(mA)
(Volts)
(A)
@ I
PP
=
1 A
@ I
PP
=
10 A
(mV/
C)
1N6373
(MPTE5)
1N6373
MPTE5
5.0
300
6.0
1.0
9.4
160
7.1
7.5
4.0
1N6374
(MPTE8)
1N6374
MPTE8
8.0
25
9.4
1.0
15
100
11.3
11.5
8.0
1N6375
(MPTE10)
1N6375
MPTE10
10
2.0
11.7
1.0
16.7
90
13.7
14.1
12
1N6376
(MPTE12)
1N6376
MPTE12
12
2.0
14.1
1.0
21.2
70
16.1
16.5
14
1N6377
(MPTE15)
1N6377
MPTE15
15
2.0
17.6
1.0
25
60
20.1
20.6
18
1N6378*
(MPTE18)
1N6378*
MPTE18
18
2.0
21.2
1.0
30
50
24.2
25.2
21
1N6379
(MPTE22)
1N6379
MPTE22
22
2.0
25.9
1.0
37.5
40
29.8
32
26
1N6380
(MPTE36)
1N6380
MPTE36
36
2.0
42.4
1.0
65.2
23
50.6
54.3
50
1N6381
(MPTE45)
1N6381
MPTE45
45
2.0
52.9
1.0
78.9
19
63.3
70
60
ICTE5
ICTE5
5.0
300
6.0
1.0
9.4
160
7.1
7.5
4.0
ICTE10
ICTE10
10
2.0
11.7
1.0
16.7
90
13.7
14.1
8.0
ICTE12
ICTE12
12
2.0
14.1
1.0
21.2
70
16.1
16.5
12
ICTE15
ICTE15
15
2.0
17.6
1.0
25
60
20.1
20.6
14
ICTE18
ICTE18
18
2.0
21.2
1.0
30
50
24.2
25.2
18
ICTE22
ICTE22
22
2.0
25.9
1.0
37.5
40
29.8
32
21
ICTE36
ICTE36
36
2.0
42.4
1.0
65.2
23
50.6
54.3
26
NOTES:
3. Square waveform, PW = 8.3 ms, Nonrepetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to
or greater than the dc or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
C and minimum voltage in V
BR
is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
3
Figure 1. Pulse Rating Curve
100
80
60
40
20
0
0
25
50
75
100 125 150 175
200
PEAK PULSE DERA
TING IN % OF
PEAK POWER OR CURRENT
@
T A
= 25
C
T
A
, AMBIENT TEMPERATURE (
C)
Figure 2. Pulse Derating Curve
5
4
3
2
1
25
50
75
100
125
150
175
200
P D
, STEADY
ST
A
TE POWER DISSIP
A
TION (W
A
TTS)
T
L
, LEAD TEMPERATURE (
C)
3/8
3/8
0
0
100
50
0
0
1
2
3
4
t, TIME (ms)
, V
ALUE (%)
t
r
10 ms
t
P
PEAK VALUE - I
PP
HALF VALUE -
I
PP
2
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
1 ms
10 ms
100 ms
1 ms
10 ms
100
10
1
t
P
, PULSE WIDTH
P PK
, PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
0.1 ms
I PP
Figure 3. Capacitance versus Breakdown Voltage
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
1
10
100
1000
10,000
1000
100
10
C, CAP
ACIT
ANCE (pF)
MEASURED @
ZERO BIAS
MEASURED @ V
RWM
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
4
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE6.8CA
through
1.5KE200CA
Figure 6. Dynamic Impedance
1000
500
200
100
50
20
10
5
2
1
1000
500
200
100
50
20
10
5
2
1
0.3
0.5 0.7 1
2
3
5
7 10
20 30
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
0.3
0.5 0.7 1
2
3
5
7 10
20 30
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
I T
,
TEST
CURRENT
(AMPS)
V
BR(MIN)
= 6.0 to 11.7 V
T
L
= 25
C
t
P
= 10 ms
V
BR(NOM)
= 6.8 to 13 V
20 V
24 V
43 V
75 V
180 V
120 V
19 V
21.2 V
42.4 V
Figure 7. Typical Derating Factor for Duty Cycle
DERA
TING F
ACT
OR
1 ms
10 ms
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 ms
0.1
0.2
0.5
2
5
10
50
1
20
100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
T
L
= 25
C
t
P
= 10 ms
I T
,
TEST
CURRENT
(AMPS)
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
5
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25
C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
V
in
V
L
V
V
in
V
in
(TRANSIENT)
V
L
t
d
V
V
L
V
in
(TRANSIENT)
Z
in
LOAD
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 8.
Figure 9.
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
6
OUTLINE DIMENSIONS
1500 Watt Mosorb
Transient Voltage Suppressors Axial Leaded
MOSORB
CASE 41A04
ISSUE D
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.335
0.374
8.50
9.50
INCHES
B
0.189
0.209
4.80
5.30
D
0.038
0.042
0.96
1.06
K
1.000
---
25.40
---
P
---
0.050
---
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A-01 THRU 041A-03 OBSOLETE, NEW
STANDARD 041A-04.
D
K
P
P
A
K
B
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
7
Notes
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
8
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
1N6373/D
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
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