Semiconductor Components Industries, LLC, 2002

June, 2002 Rev. 5

Publication Order Number:

1N6267A/D

1N6267A Series

1500 Watt Mosorb

Zener

Transient Voltage

Suppressors

Unidirectional*

Mosorb devices are designed to protect voltage sensitive

components from high voltage, highenergy transients. They have
excellent clamping capability, high surge capability, low zener
i m p e d a n c e a n d f a s t r e s p o n s e t i m e . T h e s e d e v i c e s a r e
ON Semiconductor's exclusive, cost-effective, highly reliable
Surmetic

axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.

Specification Features:

Working Peak Reverse Voltage Range 5.8 V to 214 V

Peak Power 1500 Watts @ 1 ms

ESD Rating of Class 3 (>16 KV) per Human Body Model

Maximum Clamp Voltage @ Peak Pulse Current

Low Leakage < 5

mA Above 10 V

UL 497B for Isolated Loop Circuit Protection

Response Time is Typically < 1 ns

Mechanical Characteristics:
CASE:

Void-free, transfer-molded, thermosetting plastic

FINISH:

All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230

C, 1/16

from the case for 10 seconds

POLARITY:

Cathode indicated by polarity band

MOUNTING POSITION:

Any

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1)

@ T

1500

Watts

Steady State Power Dissipation

@ T

C, Lead Length = 3/8

Derated above T

= 75

5.0

Watts

mW/

Thermal Resistance, JunctiontoLead

C/W

Forward Surge Current (Note 2)

@ T

= 25

FSM

200

Amps

Operating and Storage

Temperature Range

, T

stg

65 to

+175

1. Nonrepetitive current pulse per Figure 5 and derated above T

= 25

C per

Figure 2.

2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses

per minute maximum.

*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices

Devices listed in

bold, italic are ON Semiconductor

Preferred devices. Preferred devices are recommended
choices for future use and best overall value.

AXIAL LEAD

CASE 41A

PLASTIC

L = Assembly Location
1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
YY = Year
WW = Work Week

Cathode

Anode

Device

Package

Shipping

ORDERING INFORMATION

1.5KExxxA

Axial Lead

500 Units/Box

1.5KExxxARL4

Axial Lead

1500/Tape & Reel

1N6xxxA

Axial Lead

500 Units/Box

1N6xxxARL4*

Axial Lead

1500/Tape & Reel

L
1N6
xxxA
1.5KE
xxxA
YYWW

http://onsemi.com

*1N6302A Not Available in 1500/Tape & Reel

1N6267A Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS

= 25

C unless otherwise noted, V

= 3.5 V Max. @ I

(Note 3)

= 100 A)

RWM

Breakdown Voltage

@ I

(Note 7)

JEDEC

Device

RWM

(Note 5)

@ V

RWM

(Note 6) (Volts)

@ I

Device

(Note 4)

(Volts)

(

Min

Nom

Max

(mA)

(Volts)

(A)

(%/

1.5KE6.8A

1N6267A

5.8

1000

6.45

6.8

7.14

10.5

143

0.057

1.5KE7.5A

1N6268A

6.4

500

7.13

7.5

7.88

11.3

132

0.061

1.5KE8.2A

1N6269A

7.02

200

7.79

8.2

8.61

12.1

124

0.065

1.5KE9.1A

1N6270A

7.78

8.65

9.1

9.55

13.4

112

0.068

1.5KE10A

1N6271A

8.55

9.5

10.5

14.5

103

0.073

1.5KE11A

1N6272A

9.4

10.5

11.6

15.6

0.075

1.5KE12A

1N6273A

10.2

11.4

12.6

16.7

0.078

1.5KE13A

1N6274A

11.1

12.4

13.7

18.2

0.081

1.5KE15A

1N6275A

12.8

14.3

15.8

21.2

0.084

1.5KE16A

1N6276A

13.6

15.2

16.8

22.5

0.086

1.5KE18A

1N6277A

15.3

17.1

18.9

25.2

59.5

0.088

1.5KE20A

1N6278A

17.1

27.7

0.09

1.5KE22A

1N6279A

18.8

20.9

23.1

30.6

0.092

1.5KE24A

1N6280A

20.5

22.8

25.2

33.2

0.094

1.5KE27A

1N6281A

23.1

25.7

28.4

37.5

0.096

1.5KE30A

1N6282A

25.6

28.5

31.5

41.4

0.097

1.5KE33A

1N6283A

28.2

31.4

34.7

45.7

0.098

1.5KE36A

1N6284A

30.8

34.2

37.8

49.9

0.099

1.5KE39A

1N6285A

33.3

37.1

53.9

0.1

1.5KE43A

1N6286A

36.8

40.9

45.2

59.3

25.3

0.101

1.5KE47A

1N6287A

40.2

44.7

49.4

64.8

23.2

0.101

1.5KE51A

1N6288A

43.6

48.5

53.6

70.1

21.4

0.102

1.5KE56A

1N6289

47.8

53.2

58.8

19.5

0.103

1.5KE62A

1N6290A

58.9

65.1

17.7

0.104

1.5KE68A

1N6291A

58.1

64.6

71.4

16.3

0.104

1.5KE75A

1N6292A

64.1

71.3

78.8

103

14.6

0.105

1.5KE82A

1N6293A

70.1

77.9

86.1

113

13.3

0.105

1.5KE91A

1N6294A

77.8

86.5

95.5

125

0.106

1.5KE100A

1N6295A

85.5

100

105

137

0.106

1.5KE110A

1N6296A

105

110

116

152

9.9

0.107

1.5KE120A

1N6297A

102

114

120

126

165

9.1

0.107

1.5KE130A

1N6298A

111

124

130

137

179

8.4

0.107

1.5KE150A

1N6299A

128

143

150

158

207

7.2

0.108

1.5KE160A

1N6300A

136

152

160

168

219

6.8

0.108

1.5KE170A

1N6301A

145

162

170

179

234

6.4

0.108

1.5KE180A

1N6302A*

154

171

180

189

246

6.1

0.108

1.5KE200A

1N6303A

171

190

200

210

274

5.5

0.108

1.5KE220A

185

209

220

231

328

4.6

0.109

1.5KE250A

214

237

250

263

344

0.109

3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V

RWM

), which should be equal to or

greater than the dc or continuous peak operating voltage level.

6. V

measured at pulse test current I

at an ambient temperature of 25

7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel

1N6267A Series

http://onsemi.com

Figure 1. Pulse Rating Curve

100

100 125 150 175

200

PEAK PULSE DERA

TING IN % OF

PEAK POWER OR CURRENT

T A

= 25

, AMBIENT TEMPERATURE (

Figure 2. Pulse Derating Curve

100

125

150

175

200

P D

, STEADY

A
TE POWER DISSIP

A
TION (W

A
TTS)

, LEAD TEMPERATURE (

3/8

100

t, TIME (ms)

, V

ALUE (%)

PEAK VALUE - I

HALF VALUE -

PULSE WIDTH (t

) IS DEFINED AS

THAT POINT WHERE THE PEAK

CURRENT DECAYS TO 50% OF I

10 ms

1 ms

10 ms

100 ms

1 ms

10 ms

100

, PULSE WIDTH

P PK

, PEAK POWER (kW)

NONREPETITIVE

PULSE WAVEFORM

SHOWN IN FIGURE 5

0.1 ms

I PP

Figure 3. Capacitance versus Breakdown Voltage

1N6267A/1.5KE6.8A

through

1N6303A/1.5KE200A

, BREAKDOWN VOLTAGE (VOLTS)

100

1000

10,000

1000

100

C, CAP

ACIT

ANCE (pF)

MEASURED @ V

RWM

MEASURED @

ZERO BIAS

Figure 4. Steady State Power Derating

Figure 5. Pulse Waveform

1N6373, ICTE-5, MPTE-5,

through

1N6389, ICTE-45, C, MPTE-45, C

, BREAKDOWN VOLTAGE (VOLTS)

100

1000

10,000

1000

100

C, CAP

ACIT

ANCE (pF)

MEASURED @

ZERO BIAS

MEASURED @ V

RWM

1N6267A Series

http://onsemi.com

1N6373, ICTE-5, MPTE-5,

through

1N6389, ICTE-45, C, MPTE-45, C

1.5KE6.8CA

through

1.5KE200CA

Figure 6. Dynamic Impedance

1000

500

200
100

20
10

2
1

1000

500

200
100

20
10

2
1

0.3

0.5 0.7 1

7 10

20 30

, INSTANTANEOUS INCREASE IN V

ABOVE V

BR(NOM)

(VOLTS)

0.3

0.5 0.7 1

7 10

20 30

, INSTANTANEOUS INCREASE IN V

ABOVE V

BR(NOM)

(VOLTS)

I T

,
TEST

CURRENT

(AMPS)

BR(NOM)

= 6.8 to 13 V

= 25

= 10 ms

BR(NOM)

= 6.8 to 13 V

20 V

24 V

43 V

75 V

180 V

120 V

20 V

24 V

43 V

Figure 7. Typical Derating Factor for Duty Cycle

DERA

TING F

ACT

1 ms

10 ms

0.7
0.5
0.3

0.05

0.1

0.2

0.01

0.02

0.03

0.07

100 ms

0.1

0.2

0.5

100

D, DUTY CYCLE (%)

PULSE WIDTH

10 ms

= 25

= 10 ms

I T

,
TEST

CURRENT

(AMPS)

APPLICATION NOTES

RESPONSE TIME

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the

application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.

Some input impedance represented by Z

is essential to

prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions

and at a lead temperature of 25

C. If the duty cycle increases,

the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or

1N6267A Series

http://onsemi.com

ambient temperature rises above 25

C. The average power

derating curve normally given on data sheets may be
normalized and used for this purpose.

At first glance the derating curves of Figure 7 appear to be

in error as the 10 ms pulse has a higher derating factor than

the 10

ms pulse. However, when the derating factor for a

given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.

TYPICAL PROTECTION CIRCUIT

(TRANSIENT)

LOAD

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

= TIME DELAY DUE TO CAPACITIVE EFFECT

Figure 8.

Figure 9.

UL RECOGNITION*

The entire series has Underwriters Laboratory

Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance

Conditioning, Temperature test, Dielectric Voltage-
Withstand test, Discharge test and several more.

Whereas, some competitors have only passed a

flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.

*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA

CLIPPER BIDIRECTIONAL DEVICES

1. Clipper-bidirectional devices are available in the

1.5KEXXA series and are designated with a "CA"
suffix; for example, 1.5KE18CA. Contact your nearest
ON Semiconductor representative.

2. Clipper-bidirectional part numbers are tested in both

directions to electrical parameters in preceding table
(except for V

which does not apply).

3. The 1N6267A through 1N6303A series are JEDEC

registered devices and the registration does not include
a "CA" suffix. To order clipper-bidirectional devices
one must add CA to the 1.5KE device title.

1N6267A Series

http://onsemi.com

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local
Sales Representative.

1N6267A/D

Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.

Literature Fulfillment:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com

N. American Technical Support: 8002829855 Toll Free USA/Canada

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