ChipFind - документация

Электронный компонент: KGF1262

Скачать:  PDF   ZIP
1/10
KGF1262
electronic components
This version: Jul. 1998
Previous version: Jan. 1998
GENERAL DESCRIPTION
The KGF1262 is a medium-power amplifier, with frequencies ranging from the UHF-band to the
L-band, that features high gain, high output power, and low current operation. The KGF1262
specifications are guaranteed to a fixed matching circuit for 5.2 V and 1.9 GHz; external
impedance-matching circuits are also required. Because of the high gain and high output power
at the low operating current, the KGF1262 is ideal as a transmitter-driver amplifier for personal
handy phones of more than 1.5 GHz band.
FEATURES
High linear gain: 15 dB (min.) at 1.9 GHz
High output power: 18 dBm (min.) at 1.9 GHz
Low current operation: 70 mA (max.)
Self-bias circuit configuration with built-in source capacitor
package: 4PSOP
PACKAGE DIMENSIONS
electronic components
KGF1262
Medium-Power Amplifier
E2Q0025-38-71
1.50.15
3.00.2
0.3 MIN
0.6
+0.1
0.05
0.4
+0.1
0.05
1.80.1
0.850.05
1.90.1
2.80.15
0 to 0.15
0.125
+0.03
0
1.10.15
0.36 0.74
(Unit: mm)
Package material
Pin treatment
Solder plate thickness
Lead frame material
Epoxy resin
Solder plating
5 mm or more
42 alloy
2/10
KGF1262
electronic components
CIRCUIT
MARKING
X
NUMERICAL
ALPHABETICAL
PRODUCT TYPE
LOT
NUMBER
(1)
X
N
(2)
(4)
(3)
(1) Gate
(2) Source
(3) Drain
(4) GND
GND(4)
Drain(3)
Gate(1)
Source(2)
3/10
KGF1262
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Self-bias condition: V
DD
= 5 V
0.25 V, V
G
= 0 V, f
= 1.9 GHz
Item
V
DS
Symbol
Condition
Max.
Unit
Drain-source voltage
Gate-source voltage
Total power dissipation
Channel temperature
V
GS
P
tot
T
ch
Ta = 25C
--
10
0.4
300
150
V
V
mW
C
Storage temperature
T
stg
--
125
C
Min.
--
5.0
--
--
45
Ta = 25C
Ta = 25C
Drain current
I
DS
Ta = 25C
360
mA
--
Item
P
O
Symbol
Condition
Max.
Unit
Output power
--
dBm
--
Min.
18.0
100
(*1), P
IN
= 7 dBm
Typ.
20.0
--
Transconductance
gm
V
DS
= 3 V, I
DS
= 60 mA
mS
Linear gain
G
LIN
dB
(Ta = 25C)
--
15.0
16.5
(*1), P
IN
= 10 dBm
V
GS(off)
Gate-source cut-off voltage
1.0
mA
2.0
V
DS
= 3 V, I
DS
= 720
mA
--
I
DS(off)
Drain-source leakage current
1.0
mA
--
V
DS
= 3 V, V
GS
= 2.5 V
--
I
GDO
Gate-drain leakage current
0.5
mA
--
V
GD
= 15 V
--
I
GSS
Gate-source leakage current
0.1
mA
--
V
GS
= 5 V
--
I
D
Operating current
70.0
mA
--
(*1), P
IN
= 7 dBm
50.0
I
DSS
Drain current
--
mA
180
V
DS
= 3 V, V
GS
= 0 V
--
4/10
KGF1262
electronic components
RF CHARACTERISTICS
5/10
KGF1262
electronic components