NTE56033
TRIAC, 45 Amp
Features:
D
Blocking Voltage of 600V
D
GlassPassivated Chip
D
Gate Triggering Guaranteed in Four Modes
D
Excellent Thermal Impedance and High Reliability Construction
Absolute Maximum Ratings:
Peak Repetitive OffState Voltage (1/2 Sine Wave 6.3
s), V
DRM
600V
. . . . . . . . . . . . . . . . . . . . . . . .
OnState RMS Current (T
C
= +60
C, 360
Conduction Angle), I
T
(RMS)
40A
. . . . . . . . . . . . . . . . . . .
Peak NonRepetitive Surge Current (+25
< T
J
initial < +110
C, One Full Cycle), I
TSM
60Hz
420A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50Hz
400A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Circuit Fusing (t = 10ms), I
2
t
800A
2
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current (t = 10
s, Note 1), I
GM
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage (t = 10
s, Note 1), V
GM
16V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power (t = 10
s, Note 1), P
GM
40W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power, P
G(AV)
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +110
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Contact (with Grease), R
thCH
0.2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC(DC)
1.33
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase (F = 50Hz, 360
Conduction Angle), R
thJC(AC)
1
C/W
. . . .
Note 1. For either polarity of gate voltage with reference to MT
1
.
Note 2. For either polarity of MT
2
voltage with reference to MT
1
.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Forward Blocking Current
I
DRM
T
J
= +110
C, V
D
= 600V, Gate Open, Note 2
0.75
4.0
mA
Gate Trigger Current
Quadrant I, II, III
I
GT
V
D
= 12V, R
L
= 33
, Pulse Duration > 20
s,
1
50
mA
Quadrant IV
Note 1
1
75
mA
Gate Trigger Voltage
V
GT
V
D
= 12V, R
L
= 33
, Pulse Duration > 20
s,
Note 1
2.5
V
Gate NonTrigger Voltage
V
GD
V
D
= 600V, T
J
= +110
C, R
L
= 3k,
Pulse Duration > 20
s, Note 1
0.2
V
Holding Current
I
H
V
D
= 12V, I
T
= 1A, Gate Open, Note 2
30
80
mA
Peak OnState Voltage
V
TM
I
TM
= 60A, t
p
= 10ms, Note 2
1.6
V
Gate Controlled TurnOn Time
t
gt
V
D
= 600V, I
TM
= 40A, I
G
= 1A,
di
G
/dt = 10A/
s, Note 1
2.5
s
Critical Rate of Rise of
OffState Voltage
dv/dt
V
D
= 600V, Gate Open, T
J
= +110
C, Note 2
50
150
V/
s
Critical Rate of Rise of
Commutation Voltage
dv/dt(c) V
D
= 600V, I
TM
= 40A, T
C
= +60
C
Commutating di/dt = 18A/ms, Note 2
5
V/
s
Note 1. For either polarity of gate voltage with reference to MT
1
.
Note 2. For either polarity of MT
2
voltage with reference to MT
1
.
.600 (15.24)
MT
1
MT
2
Gate
MT
2
.060 (1.52)
.173 (4.4)
.215 (5.45)
.055 (1.4)
.015 (0.39)
.500
(12.7)
Min
.430
(10.92)
.550
(13.97)
.156
(3.96)
Dia.
NOTE: Dotted line indicates that case may have square corners.
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