NTE472
Silicon NPN Transistor
RF Power Output
P
O
= 1.8W @ 175MHz
Description:
The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator ap-
plications in military, mobile marine and citizens band equipment. Suitable for use as output driver
or predriver stages in VHF and UHF equipment.
Features:
D
Specified 12.5 Volt, 175MHz Characteristics:
Output Power = 1.75 Watts
Minimum Gain = 11.5dB
Efficiency = 50%
D
Characterized through 225MHz
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
16V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
0.33A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +75
C , Note 1), P
D
3.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 75
C 28mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as a class B or C RF amplifier.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 25mA, I
B
= 0
16
V
V
(BR)CES
I
C
= 25mA, V
BE
= 0
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
C
= 0.5mA, I
C
= 0
3.5
V
Collector Cutoff Current
I
CEO
V
CE
= 10V, I
B
= 0
0.3
mA
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