NTE470
Silicon NPN Transistor
RF Power Output
Description:
The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application
as a highpower linear amplifier from 2.0 to 30MHz.
Features:
D
Specified 12.5V, 30MHz Characteristics:
Output Power = 100W (PEP)
Minimum Gain = 10dB
Efficiency
= 40%
D
Intermodulation Distortion @ 100W (PEP): IMD = 30dB Min
D
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
45V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Withstand Current (10s)
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
290W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.66W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
0.6
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
20
V
V
(BR)CES
I
C
= 200mA, V
BE
= 0
45
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 200mA, I
E
= 0
45
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10mA, I
C
= 0
3
V
Collector Cutoff Current
I
CES
V
CE
= 16V, V
BE
= 0, T
C
= +25
C
10
mA
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
h
FE
I
C
= 5A, V
CE
= 5V
10
30
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 12.5V, I
E
= 0, f = 1MHz
650
800
pF
Functional Tests
CommonEmitter Amplifier Power Gain
G
PE
V
CC
= 12.5V, P
out
= 100W,
10
12
dB
Collector Efficiency
I
C
(max) = 10A, I
CQ
= 150mA,
f = 30, 30.001MHz
40
%
Intermodulation Distortion (Note 1)
IMD
f = 30, 30.001MHz
33
30
dB
Note 1. To proposed EIA method of measurement. Reference peak envelope power.
E
C
B
E
.725 (18.42)
.975 (24.77)
.480 (12.1) Dia
1.061 (26.95)
Ceramic Cap
.225 (5.72)
.065 (1.68)
.095 (2.42)
.127 (3.17) Dia
(2 Holes)
.260
(6.6)
.250
(6.35)
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