NTE3045
Optoisolator
Silicon NPN Darlington Phototransistor Output
Description:
The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in
a 6Lead DIP type package designed for applications requiring electrical isolation, high breakdown
voltage, and high current transfer ratios. Characterized for use as telephone relay drivers but pro-
vides excellent performance in interfacing and coupling systems, phase and feedback controls, solid
state relays, and general purpose switching circuits.
Features:
D
High Sensitivity to Low Input Drive Current
D
High CollectorEmitter Breakdown Voltage: V
(BR)CEO
= 80V (Min)
D
High InputOutput Isolation Guaranteed: V
ISO
= 7500V (Peak)
Absolute Maximum Ratings: (T
A
= +25
C, unless otherwise specified)
Input LED
Reverse Voltage, V
R
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Forward Current, I
F
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LED Power Dissipation (T
A
= +25
C with Negligible Power in Output Detector), P
D
120mW
. . . . . .
Derate Above 25
C
1.41mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Detector
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterCollector Voltage, V
ECO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Detector Power Dissipation (T
A
= +25
C with Negligible Power in Input LED), P
D
150mW
. . . . . . . .
Derate Above 25
C
1.76mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V
ISO
7500V
. . . . . . . . . . .
Total Device Power Dissipation (T
A
= +25
C), P
D
250mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
2.94mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
A
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering for 10sec, 1/16" from Case), T
L
+260
C
. . . . . . . . . . . . . . . . . .
Note 1. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pin1
and Pin2 are common, and Pin4, Pin5, and Pin6 are common.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input LED
Reverse Leakage Current
I
R
V
R
= 3V
0.05
10
A
Forward Voltage
V
F
I
F
= 10mA
1.15
2.0
V
Capacitance
C
V
R
= 0, f = 1MHz
18
pF
Photodarlington (T
A
= +25
C, I
F
= 0 unless otherwise specified)
CollectorEmitter Dark Current
I
CEO
V
CE
= 60V
1
A
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA
80
V
EmitterCollector Breakdown Voltage
V
(BR)ECO
I
E
= 100
A
5
V
Coupled (T
A
= +25
C unless otherwise specified)
Collector Output Current
I
C
V
CE
= 1.5V, I
F
= 10mA
50
mA
Isolation Surge Voltage
V
ISO
60Hz Peak AC, 5sec,
Note 2, Note 3
7500
V
Isolation Resistance
R
ISO
V = 500V, Note 2
10
11
Isolation Capacitance
C
ISO
v = 0, f = 1MHz, Note 2
0.2
pF
Switching
TurnOn Time
t
on
V
CC
= 10V,
3.5
s
TurnOff Time
t
off
R
L
= 100
,
I = 5mA
95
s
Rise Time
t
r
I
F
= 5mA
1
s
Fall Time
t
f
2
s
Note 2. For this test LED Pin1 and Pin2 are common and Phototransistor Pin4 and Pin5 are common.
Note 3. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
Pin Connection Diagram
.260
(6.6)
Max
.350
(8.89)
Max
.350 (8.89)
Max
.300 (7.62)
.200 (5.08)
Max
.085 (2.16) Max
.070 (1.78) Max
.100 (2.54)
1
2
3
5
4
6
Emitter
Collector
N.C.
1
2
Anode
Cathode
3
N.C.
6
5
4
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