NTE2561
Silicon NPN Transistor
Video Amplifier
Features:
D
High GainBandwidth Product
D
High Breakdown Voltage
D
Large Current
D
Small Reverse Transfer Capacitance
Applications:
D
WideBand Amplifiers
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse)
1.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
C
1.75W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
15W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
I
CBO
V
CB
= 80V, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 2V, I
C
= 0
5.0
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 50mA
30
200
V
CE
= 10V, I
C
= 100mA
20
GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 100mA
1.2
GHz
Output Capacitance
C
ob
V
CB
= 30V, f = 1MHz
4.4
pF
Reverse Transfer Capacitance
C
re
V
CB
= 30V, f = 1MHz
3.8
pF
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 300mA, I
B
= 30mA
0.6
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 300mA, I
B
= 30mA
1.2
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
100
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
80
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
3
V
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