NTE2319
Silicon NPN Transistor
High Voltage, High Speed Power Switch
Description:
The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for lineoperated
switchmode applications.
Features:
D
Fast TurnOn Times @ T
C
= +100
C:
Inductive Fall Time: 50ns Typ
Inductive Crossover Time: 90ns Typ
Inductive Storage Time: 800ns Typ
D
100
C Performance Specified for:
ReverseBiased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Current
Applications:
D
Switching Regulators
D
Inverters
D
Solenoids
D
Relay Drivers
D
Motor Controls
D
Deflection Circuits
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEV
850V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation, P
D
T
C
= +25
C
175W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+275
C
. . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width
5
s, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
Table 2, I
C
= 100mA, I
B
= 0
450
V
Collector Cutoff Current
I
CEV
V
CEV
= 850V,
T
C
= +25
C
0.25
mA
V
BE(off)
= 1.5V
T
C
= +100
C
1.5
mA
I
CER
V
CE
= 850V, R
BE
= 50
, T
C
= +100
C
2.5
mA
Emitter Cutoff Current
I
EBO
V
EB
= 6V, I
C
= 0
1.0
mA
ON Characteristics (Note 2)
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5A, I
B
= 700mA
2.5
V
I
C
= 10A, I
B
= 1.3A
T
C
= +25
C
3.0
V
T
C
= +100
C
3.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10A, I
B
= 1.3A
T
C
= +25
C
1.5
V
T
C
= +100
C
1.5
V
DC Current Gain
h
FE
I
C
= 15A, V
CE
= 5V
5
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f
test
= 1kHz
400
pF
Switching Characteristics
Resistive Load (Table 1)
Delay Time
t
d
I
C
= 10A,
I
B2
= 2.6A,
20
ns
Rise Time
t
r
V
CC
= 250V,
I
= 1.3A,
R
B
= 1.6
200
ns
Storage Time
t
s
I
B1
= 1.3A,
PW = 30
s,
1200
ns
Fall Time
t
f
Duty Cycle
2%
200
ns
Storage Time
t
s
V
BE(off)
= 5V
650
ns
Fall Time
t
f
80
ns
Inductive Load (Table 2)
Storage Time
t
sv
I
C
= 10A,
T
C
= +100
C
800
1800
ns
Fall Time
t
fi
I
B1
= 1.3A,
V
= 5V,
50
200
ns
Crossover Time
t
c
V
BE(off)
= 5V,
V
CE(pk)
= 400V
90
250
ns
Storage Time
t
sv
CE(pk)
T
C
= +150
C
1050
ns
Fall Time
t
fi
70
ns
Crossover Time
t
c
120
ns
Note 2. Pulse Test: Pulse Width = 300
s, Duty Cycle
2%.
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