NTE486
Silicon NPN Transistor
RF High Frequency Amplifier
Description:
The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use
in 12.5V UHF largesignal applications required in industrial equipment.
Features:
D
Specified 12.5V, 470MHz Characteristics:
Output Power = 0.75W
Minimum Gain = 8dB
Effeciency = 50%
D
S Parameter Data from 100MHz to 1GHz
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
150mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
2.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
14.3mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 5mA, I
B
= 0
20
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
35
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
4
V
Collector Cutoff Current
I
CEO
V
CE
= 15V, I
B
= 0
10
A
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 50mA
20
60
150
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 50mA, I
B
= 5mA
0.5
V
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics
Current GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 100mA, f = 200MHz
1800
2000
MHz
Output Capacitance
C
ob
V
CB
= 12.5V, I
E
= 0, f = 1MHz
3.5
4.0
pF
Functional Tests
CommonEmitter Amplifier Power Gain
G
PE
V
CC
= 12.5V, P
O
= 0.75W,
8.0
8.5
dB
Collector Efficiency
h
f = 470MHz
50
70
%
Series Equivalent Input Impedance
Z
in
14+j4.0
Series Equivalent Output Impedance
Z
out
28j38
45
.031 (.793)
.018 (0.45) Dia
Emitter
Base
Collector/Case
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260 (6.6)
Max
.500 (12.7)
Min
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