NTE483
Silicon NPN Transistor
RF Power Output for Mobile Use,
P
O
= 18W @ 866MHz
Description:
The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz
mobile communications. This device utilizes matched input technology (Tuned Q) to increase band-
width and power gain over the complete range of 806866MHz.
Features:
D
Designed for 806866MHz Mobile Equipment
D
18W Min., with Greater than 6dB Gain at 836MHz
D
Withstands 10:1 VSWR at Rated Operating Conditions
D
Matched Input Technology
D
Common Base
Absolute Maximum Ratings: (T
C
= +25
C unless othrwise specified)
CollectorBase Voltage, V
CBO
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
16V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Collector Current, I
C
7A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (At +25
C), P
tot
46W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
3.8
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristic: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0, Note 1
16
V
V
(BR)CES
I
C
= 50mA, V
BE
= 0, Note 1
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10mA, i
C
= 0
4
V
Collector Cutoff Current
I
CES
V
CE
= 15V, V
BE
= 0
10
mA
DC Current Gain
h
FE
V
CE
= 6V, I
C
= 1A
20
Note 1. Pulsed through 25mH indicator.
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