NTE15
Silicon NPN Transistor
VHF Amp, Mixer, Oscillator, UHF OSC
Features:
D
High Transition Frequency: f
T
= 1.1GHz
D
Low Base Resistance and High Gain
D
Excellent Noise Characteristics
Applications:
D
VHF Mixers and Oscillators
D
UHF Oscillators
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
19V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA
19
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 50
A
30
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 50
A
5
V
Collector Cutoff Current
I
CBO
V
CB
= 20V
0.5
A
Emitter Cutoff Current
I
EBO
V
EB
= 3V
0.5
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 5mA
39
Collector Saturation Voltage
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
0.1
V
Transition Frequency
f
T
V
CE
= 5V, I
E
= 10mA
600
1100 MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
1.2
1.5
pF
CollectorBase Time Constant
C
dbb
I
C
= 10mA, V
CB
= 5V,
f = 31.8MHz
10
15
pS
PDF 
ZIP