NTE123AP
Silicon NPN Transistor
Audio Amplifier, Switch
(Compl to NTE159)
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
600mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= 25
C), P
D
350mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
2.8mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= 25
C), P
D
1.0W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
8.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, R
JC
125
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient, R
JA
357
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 1
40
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
60
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
6
V
Collector Cutoff Current
I
CEV
V
CE
= 35V, V
EB(off)
= 0.4V
0.1
A
Base Cutoff Current
I
BEV
V
CE
= 35V, V
EB(off)
= 0.4V
0.1
A
ON Characteristics (Note 1)
DC Current Gain
h
FE
V
CE
= 1V, I
C
= 0.1mA
20
V
CE
= 1V, I
C
= 1mA
40
V
CE
= 1V, I
C
= 10mA
80
V
CE
= 1V, I
C
= 150mA
100
300
V
CE
= 1V, I
C
= 500mA
40
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1) (Cont'd)
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 150mA, I
B
= 15mA
0.4
V
I
C
= 500mA, I
B
= 50mA
0.75
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 150mA, I
B
= 15mA
0.75
0.95
V
I
C
= 500mA, I
B
= 50mA
1.2
V
SmallSignal Characteristics
Current GainBandwidth Product
f
T
I
C
= 20mA, V
CE
= 10V, f = 100MHz
250
MHz
CollectorBase Capacitance
C
cb
V
CB
= 5V, I
E
= 0, f = 100kHz
6.5
pF
EmitterBase Capacitance
C
eb
V
CB
= 0.5V, I
C
= 0, f = 100kHz
30
pF
Input Impedance
h
ie
I
C
= 1mA, V
CE
= 10V, f = 1kHz
1.0
15
k
Voltage Feedback Ratio
h
re
I
C
= 1mA, V
CE
= 10V, f = 1kHz
0.1
8.0
x 10
6
SmallSignal Current Gain
h
fe
I
C
= 1mA, V
CE
= 10V, f = 1kHz
40
500
Output Admittance
h
oe
I
C
= 1mA, V
CE
= 10V, f = 1kHz
1.0
30
mhos
Switching Characteristics
Delay Time
t
d
V
CC
= 30V, V
EB(off)
= 2V,
15
ns
Rise Time
t
r
I
C
= 150mA, I
B1
= 15mA
20
ns
Storage Time
t
s
V
CC
= 30V, I
C
= 150mA,
225
ns
Fall Time
t
f
I
B1
= I
B2
= 15mA
30
ns
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
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