TL082
Wide Bandwidth Dual JFET Input Operational Amplifier
General Description
These devices are low cost, high speed, dual JFET input op-
erational amplifiers with an internally trimmed input offset
voltage (BI-FET II
TM
technology). They require low supply
current yet maintain a large gain bandwidth product and fast
slew rate. In addition, well matched high voltage JFET input
devices provide very low input bias and offset currents. The
TL082 is pin compatible with the standard LM1558 allowing
designers to immediately upgrade the overall performance of
existing LM1558 and most LM358 designs.
These amplifiers may be used in applications such as high
speed integrators, fast D/A converters, sample and hold cir-
cuits and many other circuits requiring low input offset volt-
age, low input bias current, high input impedance, high slew
rate and wide bandwidth. The devices also exhibit low noise
and offset voltage drift.
Features
n
Internally trimmed offset voltage:
15 mV
n
Low input bias current:
50 pA
n
Low input noise voltage:
16nV/
Hz
n
Low input noise current:
0.01 pA/
Hz
n
Wide gain bandwidth:
4 MHz
n
High slew rate:
13 V/s
n
Low supply current:
3.6 mA
n
High input impedance:
10
12
n
Low total harmonic distortion A
V
= 10,:
<
0.02%
R
L
= 10k, V
O
= 20 Vp - p,
BW = 20 Hz-20 kHz
n
Low 1/f noise corner:
50 Hz
n
Fast settling time to 0.01%:
2 s
Typical Connection
Connection Diagram
Simplified Schematic
BI-FET II
TM
is a trademark of National Semiconductor Corp.
DS008357-1
DIP/SO Package (Top View)
DS008357-3
Order Number TL082CM or TL082CP
See NS Package Number M08A or N08E
DS008357-2
April 1998
TL082
W
ide
Bandwidth
Dual
JFET
Input
Operational
Amplifier
1999 National Semiconductor Corporation
DS008357
www.national.com
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
18V
Power Dissipation
(Note 2)
Operating Temperature Range
0C to +70C
T
j(MAX)
150C
Differential Input Voltage
30V
Input Voltage Range (Note 3)
15V
Output Short Circuit Duration
Continuous
Storage Temperature Range
-65C to +150C
Lead Temp. (Soldering, 10 seconds)
260C
ESD rating to be determined.
Note 1: "Absolute Maximum Ratings" indicate limits beyond which damage
to the device may occur. Operating Ratings indicate conditions for which the
device is functional, but do not guarantee specific performance limits.
DC Electrical Characteristics
(Note 5)
Symbol
Parameter
Conditions
TL082C
Units
Min
Typ
Max
V
OS
Input Offset Voltage
R
S
= 10 k
, T
A
= 25C
5
15
mV
Over Temperature
20
mV
V
OS
/
T
Average TC of Input Offset
R
S
= 10 k
10
V/C
Voltage
I
OS
Input Offset Current
T
j
= 25C, (Notes 5, 6)
25
200
pA
T
j
70C
4
nA
I
B
Input Bias Current
T
j
= 25C, (Notes 5, 6)
50
400
pA
T
j
70C
8
nA
R
IN
Input Resistance
T
j
= 25C
10
12
A
VOL
Large Signal Voltage Gain
V
S
=
15V, T
A
= 25C
25
100
V/mV
V
O
=
10V, R
L
= 2 k
Over Temperature
15
V/mV
V
O
Output Voltage Swing
V
S
=
15V, R
L
= 10 k
12
13.5
V
V
CM
Input Common-Mode Voltage
V
S
=
15V
11
+15
V
Range
-12
V
CMRR
Common-Mode Rejection Ratio
R
S
10 k
70
100
dB
PSRR
Supply Voltage Rejection Ratio
(Note 7)
70
100
dB
I
S
Supply Current
3.6
5.6
mA
AC Electrical Characteristics
(Note 5)
Symbol
Parameter
Conditions
TL082C
Units
Min
Typ
Max
Amplifier to Amplifier Coupling
T
A
= 25C, f = 1Hz-
-120
dB
20 kHz (Input Referred)
SR
Slew Rate
V
S
=
15V, T
A
= 25C
8
13
V/s
GBW
Gain Bandwidth Product
V
S
=
15V, T
A
= 25C
4
MHz
e
n
Equivalent Input Noise Voltage
T
A
= 25C, R
S
= 100
,
25
nV/
Hz
f = 1000 Hz
i
n
Equivalent Input Noise Current
T
j
= 25C, f = 1000 Hz
0.01
pA/
Hz
Note 2: For operating at elevated temperature, the device must be derated based on a thermal resistance of 115C/W junction to ambient for the N package.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: The power dissipation limit, however, cannot be exceeded.
Note 5: These specifications apply for V
S
=
15V and 0C
T
A
+70C. V
OS
, I
B
and I
OS
are measured at V
CM
= 0.
Note 6: The input bias currents are junction leakage currents which approximately double for every 10C increase in the junction temperature, T
j
. Due to the limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
D
. T
j
= T
A
+
jA
P
D
where
jA
is the thermal resistance from junction to ambient. Use of a heat sink is recom-
mended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice.
V
S
=
6V to
15V.
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2
Typical Performance Characteristics
(Continued)
Gain Bandwidth
DS008357-27
Bode Plot
DS008357-28
Slew Rate
DS008357-29
Distortion vs Frequency
DS008357-30
Undistorted Output
Voltage Swing
DS008357-31
Open Loop Frequency
Response
DS008357-32
Common-Mode Rejection
Ratio
DS008357-33
Power Supply Rejection
Ratio
DS008357-34
Equivalent Input Noise
Voltage
DS008357-35
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